MMBTA56LT3 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2004

March, 2004 − Rev. 3 1Publication Order Number:

MMBTA55LT1/D

MMBTA55LT1,

MMBTA56LT1

MMBTA56LT1 is a Preferred Device

Driver Transistors

PNP Silicon

Features

•Pb−Free Package is Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage MMBTA55

MMBTA56

VCEO −60

−80

Vdc

Collector−Base Voltage MMBTA55

MMBTA56

VCBO −60

−80

Vdc

Emitter−Base Voltage VEBO −4.0 Vdc

Collector Current − Continuous IC−500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient RJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient RJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to

+150 °C

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Device Package Shipping†

ORDERING INFORMATION

MMBTA55LT1 SOT−23

SOT−23

CASE 318

STYLE 6

3000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

MARKING DIAGRAMS

2H X

MMBTA55LT1

COLLECTOR

BASE

EMITTER

2GM X

MMBTA56LT1

MMBTA55LT3 SOT−23 10,000/Tape & Reel

http://onsemi.com

2H, 2GM = Specific Device Code

X = Date Code

MMBTA56LT1 SOT−23 3000/Tape & Reel

MMBTA56LT3 SOT−23 10,000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBTA56LT1G SOT−23

(Pb−Free) 3000/Tape & Reel

MMBTA55LT1, MMBTA56LT1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = −1.0 mAdc, IB = 0) MMBTA55

MMBTA56

V(BR)CEO −60

−80 −

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −100 Adc, IC = 0) V(BR)EBO −4.0 − Vdc

Collector Cutoff Current

(VCE = −60 Vdc, IB = 0) ICES − −0.1 Adc

Collector Cutoff Current

(VCB = −60 Vdc, IE = 0) MMBTA55

(VCB = −80 Vdc, IE = 0) MMBTA56

ICBO −

−−0.1

−0.1

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

hFE 100

100 −

−

Collector−Emitter Saturation Voltage

(IC = −100 mAdc, IB = −10 mAdc) VCE(sat) − −0.25 Vdc

Base−Emitter On Voltage

(IC = −100 mAdc, VCE = −1.0 Vdc) VBE(on) − −1.2 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) fT50 − MHz

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Switching Time Test Circuits

OUTPUT

TURN−ON TIME

−1.0 V VCC

+40 V

* CS  6.0 pF

100

Vin

5.0 F

tr = 3.0 ns

+10 V

5.0 s

OUTPUT

TURN−OFF TIME

+VBB VCC

+40 V

* CS  6.0 pF

100

Vin

5.0 F

tr = 3.0 ns

5.0 s

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

MMBTA55LT1, MMBTA56LT1

http://onsemi.com

Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance

Figure 4. Switching Time

IC, COLLECTOR CURRENT (mA)

−100 −200−10

200

100

VR, REVERSE VOLTAGE (VOLTS)

−1.0 −100−0.1

100

−2.0

VCE = −2.0 V

TJ = 25°C

fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

C, CAPACITANCE (pF)

−2.0 −3.0 −5.0 −7.0 −20 −30 −50 −70

7.0

5.0 −0.2 −0.5 −5.0 −10 −20 −50

TJ = 25°C

Cibo

Cobo

IC, COLLECTOR CURRENT (mA)

−10−5.0

500

200

100

−100

t, TIME (ns)

−50 −200 −500

1.0 k

300

700

−7.0 −300−70−20 −30

VCC = −40 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

td @ VBE(off) = −0.5 V

Figure 5. DC Current Gain

−2.0 −500−0.5

IC, COLLECTOR CURRENT (mA)

400

200

100

−10

, DC CURRENT GAIN

TJ = 125°C

−1.0 −5.0

VCE = −1.0 V

−20 −100−50 −200

hFE

25°C

−55°C

Figure 6. “ON” Voltages

V, VOLTAGE (VOLTS)

−10 −500−1.0

IC, COLLECTOR CURRENT (mA)

−1.0

−0.8

−0.6

−0.4

−0.2

−100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = −1.0 V

−0.5 −2.0 −5.0 −200−20 −50

MMBTA55LT1, MMBTA56LT1

http://onsemi.com

Figure 7. Collector Saturation Region Figure 8. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

IB, BASE CURRENT (mA)

RVB , TEMPERATURE COEFFICIENT (mV/ C)

°

, COLLECTOR−EMITTER VOLTAGE (VOLTS)VCE

−100 −500−0.5

−0.8

−1.2

−1.6

−2.0

−2.4

−2.8

−10

RVB for VBE

−1.0 −2.0 −5.0 −20 −50 −200

−0.1 −10−0.05

−1.0

−0.8

−0.6

−0.4

−0.2

−1.0

TJ = 25°C

−50

IC =

−100 mA

IC =

−50 mA

IC =

−250 mA

IC =

−500 mA

IC =

−10 mA

−20−2.0 −5.0−0.2 −0.5

MMBTA55LT1, MMBTA56LT1

http://onsemi.com

PACKAGE DIMENSIONS

CASE 318−08

ISSUE AH

SOT−23 (TO−236)

DIM

MIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0350 0.0440 0.89 1.11

D0.0150 0.0200 0.37 0.50

G0.0701 0.0807 1.78 2.04

H0.0005 0.0040 0.013 0.100

J0.0034 0.0070 0.085 0.177

K0.0140 0.0285 0.35 0.69

L0.0350 0.0401 0.89 1.02

S0.0830 0.1039 2.10 2.64

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD

318−08.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

mm

inches

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

SOT−23

2.0

0.079

MMBTA55LT1, MMBTA56LT1

http://onsemi.com

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MMBTA55LT1/D

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