BCX56-10R1-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

June, 2001 – Rev. 0 1Publication Order Number:

BCX56–10R1/D

BCX56-10R1

Preferred Device

NPN Silicon

Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in

audio amplifier applications. The device is housed in the SOT-89

package, which is designed for medium power surface mount

applications.

•High Current: 1.0 Amp

•Available in 7 inch/1000 unit Tape and Reel

•Device Marking: BK

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Emitter Voltage VCEO 80 Vdc

Collector-Base Voltage VCBO 100 Vdc

Emitter-Base Voltage VEBO 5 Vdc

Collector Current IC1 Adc

Total Power Dissipation

@ TA = 25°C

Derate above 25°C

(Note 1.)

(Note 2.)

1.56

0.67

5.0

Watts

mW/°C

Watts

mW/°C

Operating and Storage

Temperature Range TJ, Tstg –65 to 150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance

Junction-to-Ambient

(surface mounted)

RθJA

(Note 1.)

(Note 2.) 80

190

°C/W

Maximum Temperature for

Soldering Purposes

Time in Solder Bath

TL260

10 °C

Sec

1. FR–4 @ 1.0 X 1.0 inch Pad

2. FR–4 @ Minimum Pad

Device Package Shipping

ORDERING INFORMATION

SOT–89

CASE 1213

STYLE 2

http://onsemi.com

MARKING DIAGRAM

Y = Year Code

M = Month Code

BK= Device Code

Preferred devices are recommended choices for future use

and best overall value.

COLLECTOR 2

BASE

EMITTER

MEDIUM POWER

NPN SILICON

HIGH CURRENT

TRANSISTOR

SURFACE MOUNT

123

BCX56–10R1 SOT–89 1000/Tape & Reel

BCX56–10R1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

(IC = 100 µAdc, IE = 0) V(BR)CBO 100 – – Vdc

Collector-Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 – – Vdc

Emitter-Base Breakdown Voltage

(IE = 10 µAdc, IC = 0) V(BR)EBO 5.0 – – Vdc

Collector-Base Cutoff Current

(VCB = 30 Vdc, IE = 0) ICBO – – 100 nAdc

Emitter-Base Cutoff Current

(VEB = 5.0 Vdc, IC = 0) IEBO – – 10 µAdc

ON CHARACTERISTICS (Note 3.)

DC Current Gain

(IC = 5.0 mA, VCE = 2.0 V)

(IC = 150 mA, VCE = 2.0 V)

(IC = 500 mA, VCE = 2.0 V)

hFE 25

–

160

–

Collector-Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) – – 0.5 Vdc

Base-Emitter On Voltage

(IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) – – 1.0 Vdc

DYNAMIC CHARACTERISTICS

Current-Gain – Bandwidth Product

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) fT– 130 – MHz

3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

TYPICAL ELECTRICAL CHARACTERISTICS

hFE, DC CURRENT GAIN

100

10 1000100101

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

TJ = 125°C

TJ = 25°C

TJ = -55°C

1000

BCX56–10R1

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

IC, COLLECTOR CURRENT (mA)

Figure 2. Current-Gain – Bandwidth Product

f, CURRENTGAIN  BANDWIDTH PRODUCT (MHz

1000

100

10 100101.0 1000

C, CAPACITANCE (pF)

8.0

6.0

4.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Capacitance

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

IC, COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages

1.0

0.4

01001.00.5 500

1.0

0.8

0.6

0.4

0.2

IC, COLLECTOR CURRENT (mA)

Figure 5. Collector Saturation Region

0.05 0.1 0.2 0.5 2.0 5.0 10 20 50

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

0.8

0.6

0.2

2.0 5.0 10 20 50 200 1.0

VBE(on) @ VCE = 1.0 V

VCE(sat) @ IC/IB = 10

VBE(sat) @ IC/IB = 10

TJ = 25°C

100mA

TJ = 25°C

250mA 500mA

IC = 10mA

TJ = 25°C

Cibo

Cobo

STEP 1

PREHEAT

ZONE 1

RAMP"

STEP 2

VENT

SOAK"

STEP 3

HEATING

ZONES 2 & 5

RAMP"

STEP 4

HEATING

ZONES 3 & 6

SOAK"

STEP 5

HEATING

ZONES 4 & 7

SPIKE"

STEP 6

VENT

STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO

219°C

PEAK AT

SOLDER

JOINT

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

100°C

150°C

160°C

170°C

140°C

Figure 6. Typical Solder Heating Profile

BCX56–10R1

http://onsemi.com

PACKAGE DIMENSIONS

SOT–89

(3–LEAD)

CASE 1213–02

ISSUE C

0.10 T S

E2 PL

–A–

–B–

–T– SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. 1213-01 OBSOLETE, NEW STANDARD 1213-02.

DIM

MIN MAX MIN MAX

INCHES

4.40 4.60 0.173 0.181

MILLIMETERS

B2.40 2.60 0.094 0.102

C1.40 1.60 0.055 0.063

D0.37 0.57 0.015 0.022

E0.32 0.52 0.013 0.020

F1.50 1.83 0.059 0.072

G1.50 BSC 0.059 BSC

H3.00 BSC 0.118 BSC

J0.30 0.50 0.012 0.020

K0.80 --- 0.031 ---

L--- 4.25 --- 0.167

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

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Phone: 81–3–5740–2700

Email: r14525@onsemi.com

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BCX56–10R1/D

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