TOSHIBA 188361 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 188361 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm Small Package e Low Forward Voltage >: Vp=0.9V (Typ.) e Fast Reverse Recovery Time : tpyrp=1.6ns (Typ.) 4 i ~ Small Total Capacitance : Cp=0.9pF (Typ.) LE | MAXIMUM RATINGS (Ta = 25C) 19 CHARACTERISTIC SYMBOL | RATING | UNIT FI | # als | 3 Maximum (Peak) Reverse Voltage VRM 85 Vv a Reverse Voltage VR 80 Vv t Maximum (Peak) Forward Current IfM 300* mA 1g Average Forward Current I9 100* mA > $ 5 ANODE Surge Current (10ms) Irom 2* A 3. CATHODE Hower Dissipation P 100 mW JEDEC _ Junction Temperature Tj 125 Cc EIAJ Storage Temperature Tste 55~125 Cc TOSHIBA 1-2S1B * Unit Rating. Total Rating=Unit Ratingx1.5 Weight : 2.4mg ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT VF (1) Ip=1lmA 0.60 | Forward Voltage VF (2) Ip=10mA 0.72 | Vv VF (3) Ifp=100mA 0.90 | 1.20 I VR=30V 0.1 Reverse Currunt RQ) R uA IR (2) VR=80V 0.5 Total Capacitance Cy Vr=0, f=1MHz 0.9 3.0 | pF Reverse Recovery Time try Ifp=10mA, Fig.1 1.6 4.0 | ns Marking ei B3 oS & 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 1/2 TOSHIBA 188361 IF VE IR - VR ~ ~ Ta = 100C % < & 3 & x E & & fo} E z a 3 a jc] fm & gE io] 0 0.2 0.4 0.6 0.8 1.0 12 0 20 40 60 80 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT VR trr Ip 3 ~ = Ta=25C 5 w Fig. 1 2 5 ig. Eat & ~ 2 8 eB bn Z 3 2 B io) 2 2 3 ea = = cy mm 1 0.3 1 3 10 30 100 300 1 0.3 1 3 10 30 50 REVERSE VOLTAGE VR (V) FORWARD CURRENT Ip (mA) 961001 EAA2 @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-05-07 2/2