Data Sheet No. 2N3637 Generic Part Number: 2N3637 Type 2N3637 Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/357 Features: * * * * General-purpose high gain, low power amplifier transistor which operates over a wide temperature range. Housed in a TO-39 case. Also it will be available in chip form using the TBD chip geometry. The Min and Max limits shown are per MIL-PRF-19500/357 which Semicoa meets in all cases. TO-39 Maximum Ratings o TC = 25 C unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 175 V Collector-Base Voltage VCBO 175 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.0 mA Operating Junction Temperature TJ -65 to +200 TSTG -65 to +200 Storage Temperature o C o C Data Sheet No. 2N3637 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 A Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 A, pulsed Collector-Base Cutoff Current VCB = 100 V o VCB = -100 V, TA = +150 C Emitter-Base Cutoff Current VEB = 3 V Collector-Emitter Cutoff Current VCE = 100 V ON Characteristics Forward Current Transfer Ratio IC = 0.1 mA, VCE = 10 V (pulse test) IC = 1.0 mA, VCE = 1.0 V (pulse test) IC = 10 mA, VCE = 10 V (pulse test) IC = 50 mA, VCE = 10 V (pulse test) IC = 150 mA, VCE = 10 V (pulse test) IC = 50 mA, VCE = 10 V (pulsed), TA = -55oC Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA (pulse test) IC = 50 mA, IB = 5 mA (pulse test) Symbol Min Max Unit V(BR)CBO 175 --- V V(BR)CEO 175 --- V V(BR)EBO 5.0 --- V ICBO1 ICBO2 --- 100 nA --- 100 A IEBO --- 50 nA ICEO --- 10 A Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 hFE5 55 90 100 100 60 ------300 --- ----------- hFE6 50 --- --- VCE(sat)1 VCE(sat)2 ----- 0.3 0.6 V dc V dc VBE(sat)1 VBE(sat)2 --0.65 0.8 0.9 V dc V dc Symbol Min Max Unit td --- 100 ns tr --- 100 ns ts --- 500 ns tf --- 150 ns toff --- 600 ns Base-Emitter Saturation Voltage Non Saturated IC = 10 mA, IB = 1 mA (pulse test) IC = 50 mA, IB = 5 mA (pulse test) Switching Characteristics Pulse Delay Time Per Figure 3 of MIL-S-19500/357 Pulse Rise Time IC = 500 mA, IB1 = 50 mA, VEB = 2 V Pulse Storage Time IC = 500 mA, IB1 = IB2 = 50 mA Pulse Fall Time IC = 500 mA, IB1 = IB2 = 50 mA t off IC = 500 mA, IB1 = IB2 = 50 mA Data Sheet No. 2N3637 Small Signal Characteristics Magnitude of Short-Circuit Forward Current Transfer Ratio VCE = 30 V, IC = 30 mA, f = 100 MHz Magnitude of Short-Circuit Forward Current Transfer Ratio VCE = 10 V, IC = 10 mA, f = 1 kHz Short-Circuit Input Impedance VCE = 10 V, IC = 10 mA, f = 1 kHz Open-Circuit, Reverse Voltage Transfer Ratio VCE = 10 V, IC = 10 mA, f = 1 kHz Open Circuit Output Admittance VCE = 10 V, IC = 10 mA, f = 1 kHz Open Circuit Output Capacitance VCB = 20 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 1 V, IC = 0, 100 kHz < f < 1 MHz Noise Figure VCE = 10 V, IC = 0.5 mA, Rg = 1 kohm f = 100 Hz f = 1 kHz f = 10 kHz Symbol Min Max Unit |hFE| 2.0 8.5 --- hFE 80 320 --- hIE 200 1200 ohms hRE --- 3x10 --- hoe --- 200 S COBO --- 10 pF CIBO --- 75 pF NF ------- 5 3 3 dB dB dB -4