Type 2N3637
Geometry TBD
Polarity PNP
Qual Level: Pending
Data Sheet No. 2N3637
Generic Part Number:
2N3637
REF: MIL-PRF-19500/357
Features:
• General-purpose high gain, low
power amplifier transistor which
operates over a wide temperature
range.
• Housed in a TO-39 case.
• Also it will be available in chip
form using the TBD chip geome-
try.
• The Min and Max limits shown are
per MIL-PRF-19500/357 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 175 V
Collector-Base Voltage VCBO 175 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current, Continuous IC1.0 mA
Operating Junction Temperature TJ-65 to +200 oC
Storage Temperature TSTG -65 to +200 oC
Maximum Ratings
TC = 25oC unless otherwise specified
TO-39
Data Sheet No. 2N3637
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA, pulsed
Collector-Base Cutoff Current
VCB = 100 V ICBO1 --- 100 nA
VCB = -100 V, TA = +150
o
CICBO2 --- 100 µA
Emitter-Base Cutoff Current
VEB = 3 V
Collector-Emitter Cutoff Current
VCE = 100 V ICEO --- 10 µA
--- 50
V(BR)CEO 175 ---
V(BR)EBO 5.0 ---
nA
V
Electrical Characteristics
T
C
= 25oC unless otherwise specified
V
V
V(BR)CBO 175 ---
IEBO
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 0.1 mA, VCE = 10 V (pulse test) hFE1 55 --- ---
IC = 1.0 mA, VCE = 1.0 V (pulse test) hFE2 90 --- ---
IC = 10 mA, VCE = 10 V (pulse test) hFE3 100 --- ---
IC = 50 mA, VCE = 10 V (pulse test) hFE4 100 300 ---
IC = 150 mA, VCE = 10 V (pulse test) hFE5 60 --- ---
IC = 50 mA, VCE = 10 V (pulsed), TA = -55oChFE6 50 --- ---
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA (pulse test) VCE(sat)1 --- 0.3 V dc
IC = 50 mA, IB = 5 mA (pulse test) VCE(sat)2 --- 0.6 V dc
Base-Emitter Saturation Voltage Non Saturated
IC = 10 mA, IB = 1 mA (pulse test) VBE(sat)1 --- 0.8 V dc
IC = 50 mA, IB = 5 mA (pulse test) VBE(sat)2 0.65 0.9 V dc
Switching Characteristics
Symbol
Min
Max
Unit
Pulse Delay Time
Per Figure 3 of MIL-S-19500/357
Pulse Rise Time
IC = 500 mA, IB1 = 50 mA, VEB = 2 V
Pulse Storage Time
IC = 500 mA, IB1 = IB2 = 50 mA
Pulse Fall Time
IC = 500 mA, IB1 = IB2 = 50 mA
t off IC = 500 mA, IB1 = IB2 = 50 mA toff --- 600 ns
tf--- 150 ns
ts--- 500 ns
tr--- 100 ns
td--- 100 ns
Data Sheet No. 2N3637
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Short-Circuit
Forward Current Transfer Ratio
VCE = 30 V, IC = 30 mA, f = 100 MHz
Magnitude of Short-Circuit
Forward Current Transfer Ratio
VCE = 10 V, IC = 10 mA, f = 1 kHz
Short-Circuit Input Impedance
VCE = 10 V, IC = 10 mA, f = 1 kHz
Open-Circuit, Reverse Voltage Transfer Ratio
VCE = 10 V, IC = 10 mA, f = 1 kHz
Open Circuit Output Admittance
VCE = 10 V, IC = 10 mA, f = 1 kHz
Open Circuit Output Capacitance
VCB = 20 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 1 V, IC = 0, 100 kHz < f < 1 MHz
Noise Figure
V
CE
= 10 V, I
C
= 0.5 mA, R
g
= 1 kohm
f = 100 Hz --- 5dB
f = 1 kHz --- 3dB
f = 10 kHz --- 3dB
hFE 80 320 ---
|hFE|2.0 8.5 ---
pF
NF
hIE 200 1200
CIBO --- 75
hoe --- 200
pF
ohms
hRE --- 3x10-4 ---
µS
COBO --- 10
