IGC99T120T6RH
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7683A, Edition 0.9, 24.11.2006
IGBT4 High Power Chip
This chip is used for:
• medium / high power modules
FEATURES:
• 1200V Trench + Field Stop technology
• low VCE(sat)
• soft turn off
• positive temperature coefficient
• easy paralleling
Applications:
• medium / high power drives
G
C
E
Chip Type VCE ICn Die Size Package
IGC99T120T6RH 1200V
100A
10.39 x 9.5 mm2 sawn on foil
MECHANICAL PARAMETER
Raster size 10.39 x 9.5
Emitter pad size (incl. gate pad) 7.987 x 8.923
Gate pad size 1.31 x 0.811
Area total / active 98.7 / 76.1
mm2
Thickness 140 µm
Wafer size 150 mm
Flat position 90 grd
Max.possible chips per wafer 140
Passivation frontside Photoimide
Pad metal 3200 nm AlSiCu
Backside metal Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond Electrically conductive glue or solder
Wire bond Al, <500µm
Reject ink dot size ∅ 0.65mm ; max 1.2mm
Recommended storage environment Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
IGC99T120T6RH
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7683A, Edition 0.9, 24.11.2006
MAXIMUM RATINGS
Parameter Symbol Value Unit
Collector-Emitter voltage, Tj=25 °C VCE
1200 V
DC collector current, limited by Tjmax IC 1 ) A
Pulsed collector current, tp limited by Tjmax
Icpuls 300 A
Gate-Emitter voltage VGE
±20 V
Operating junction temperature Tj -40 ... +175 °C
Short circuit data
2 ) VGE = 15V, VCC = 800V, Tvj = 150°C tp 10 µs
Reverse bias safe operating area 2 ) (RBSOA) IC max = 200A, VCE max = 1200V, Tvj max= 150°C
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterization
STATIC CHARACTERISTICS (tested on wafer), Tj=25 °C
Value
Parameter Symbol Conditions min. typ. max. Unit
Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC= 3.8 mA 1200
Collector-Emitter saturation voltage VCE(sat) VGE=15V, IC=100A 1.5 1.7 2.0
Gate-Emitter threshold voltage VGE(th) IC=3.8mA , VGE=V
CE
5.0 5.8 6.5
V
Zero gate voltage collector current ICES
VCE=1200V , VGE=0V 13 µA
Gate-Emitter leakage current IGES
VCE
=0V , VGE=20V 600 nA
Integrated gate resistor RGint 7.5 Ω
ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization)
Value
Parameter Symbol Conditions min. typ. max. Unit
Input capacitance Ciss 6150
Output capacitance Coss 405
Reverse transfer capacitance Crss
VCE=25V,
VGE =0V,
f=1MHz 345
pF
IGC99T120T6RH
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7683A, Edition 0.9, 24.11.2006
SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design
/characterization) Value
Parameter Symbol Conditions 1) min. typ. max. Unit
Turn-on delay time td(on) tbd
Rise time tr tbd
Turn-off delay time td(off) tbd
Fall time tf
Tj=125°C
VCC=600V,
IC=100A,
VGE =-15/15V,
RG= ---Ω tbd
ns
1) values also influenced by parasitic L- and C- in measurement and package.
IGC99T120T6RH
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7683A, Edition 0.9, 24.11.2006
CHIP DRAWING
IGC99T120T6RH
Edited by INFINEON Technologies , AIM PMD D CID CLS , L7683A, Edition 0.9, 24.11.2006
FURTHER ELECTRICAL CHARACTERISTICS
This chip data sheet refers to the
device data sheet tbd
DESCRIPTION
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life -support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
