SIEMENS BAS 125W Silicon Schottky Diodes Preliminary data * For low-loss, fast-recovery, meter protection, bias isolation and clamping application * Integrated diffused guard ring Low forward voitage 1 BAS 125-04W BAS 125-04W BAS 125-06W VSO05561 iar efor Ai fad fe) [+] {5} PIGS ye ye ar 1 a Dearie cern pesrer ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking |Ordering Code /|Pin Configuration Package BAS 125-04W [14s Q62702- 1=A1 |2=C2 = |3=C1/A2 |SOT-323 BAS 125-05W | 15s Q62702- 1=A1 [2=A2 |3=C1/C2 |SOT-323 BAS 125-06W [16s Q62702- 1=C1 |2=C2 {[3=A1/A2 |SOT-323 BAS 125W 13s Q62702- 1=A 3=C SOT-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage Va 25 Vv Forward current le 100 mA Surge forward current (t< 10ms) fesm 500 Total Power dissipation Prot mw Tg $25 C 250 Junction temperature Fj 150 i @ Storage temperature Tetg. - 55 ... + 159 Thermal Resistance Junction ambient, BAS125W 1) RinsA $310 K/W Junction ambient, BAS 125-04W...06W 1) Fina = 425 Junction - soldering point, BAS125W Ainss < 230 Junction - soldering point, BAS125-04W...06W Rtnus < 265 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm Semiconductor Group 245 12.96 SIEMENS BAS 125W Electrical Characteristics at T,=25C, uniess otherwise specified Parameter Symbol Values Unit min. |typ. max. DC characteristics Reverse current Va = 20V Va =25V 150 200 nA Forward voltage fe=1mMA lp =10 mA fp = 35 MA 385 530 800 400 650 900 mV AC Characteristics Diode capacitance Va =OV, f= 1 MHz Cr 1.1 pF Differential forward resistance le =5 mA, f= 10 kHz 16 Semiconductor Group 246 12.96 SIEMENS BAS 125W Forward current /p = f (T,*; Ts) * Package mounted on epoxy BAS 125W 100 f * 50 0 20 40 60 80 100 120 a C 150 Ty Ts Permissible Pulse Load Atysjs = At) BAS 125W Semiconductor Group Permissible Pulse Load lemax//roc = Ah) BAS 125W 102 Sema! ene - 101 247 407 HH it ri TOC mai LT] CH a a Le i mc cit NT | ii NL 1o% 10 10% 10 4 10? 10s 10 He 12.96 SIEMENS BAS 125W Forward current /p = f (T,a*; Ts) * Package mounted on epoxy BAS 125-04W... (/- per diode) 100 mA 80 | 70 60 50 10 9 0 20 40 60 80 100 120 C 150 m TyTs Permissible Pulse Load AyyJs = {b) Permissible Pulse Load frmax/fepc = Kt) BAS 125-04W... BAS 125-04W... 103 10? i Reus THC Ltt S| Tq i" Mt | ari th Ua fll mh 107 Cr ill ae iH Peat Too TCS * 40% 10 if | i 40 10% 10% 10 10% 10 10% 107s 10 10 Semiconductor Group 248 12.96 SIEMENS BAS 125W Forward Current /F = {V_) EHDQ7115 AS 125... 102 B, > mA 10! 10 107! -2 10 05 0.5 Vv 1.0 -m Ve Reverse current /5 = f (Va) T, = Parameter 10! BAS 125... EHDO7116 r Tp uA ' 107? -3 10 0 10 Vv 20 ao Vp Semiconductor Group 249 Diode capacitance Cy =f (Vp) | f= {MHz HDO7117 1.0 GAS 125... 0.6 0.4 0.2 0.0 0 10 v 20 -~m Vp Differential forward resistance Ar = f(/r) f= 10kHz 104 BAS 125... EHO07118 a 105 107 10 1072 107!