FSPYC264R3 - Fairchild Semiconductor

File N umber

4886

FSPYC264 R, FSPYC264F

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Fairchild Star*Power™ Rad Hard

MOSFETs have been specifi cally

developed for hi gh performance

appli cations in a com me rci al or

military space environment. Star*Power MOSFETs offer the

system designer both extremely low rDS(ON) and Gat e

Charge allowing the development of low l oss Power

Subsystems. Star*Powe r FETs combi ne this electrical

capabilit y wit h total dose ra diation har dness up to 300K

RADs whil e maintaining the guaranteed performance for

Singl e Event Effects (SEE) which the F air child FS famili es

have always fe atured.

The Fairchild portfolio of Star*Power FETs includes a family

of devices in various vol tage, current and package styles.

The Star*Power fami ly consists of Star*Power and

Star*Power Gold pr oducts. Star*Power FETs are optimi zed

for total dose and rDS(ON) perfor mance while exhi biti ng SEE

capabilit y at full rated vo lt age up to an LET of 3 7.

Star*Power Gold FETs have been optimized for SEE and

Gate Charge providing SEE performance to 80% of the

rated voltage for an LET of 82 with extremely low gate

charge characteristics.

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is sp ecifical ly designed and processed to be

radiation tol erant. The MOSFET is well sui ted for

applications exposed to radiation environments such as

switching re gulation, switching co nverters, power

distribu ti on, motor drives and rela y dri vers as well as ot her

power control and co nditioning applications. As wit h

conventional MOSFETs these Radi ati on Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Reliability screening is available as either TXV or Space

equivalent of MIL-S-19500.

Formerly available as type TA45217 W.

Features

• 45A, 250V, rDS(ON) = 0.04 6Ω

• UIS Rated

• Total Dose

- Meet s Pre-RAD Specifications to 100K RAD (Si)

- Rated to 300K RAD ( Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunit y for LET of 36MeV/mg /cm2 with

VDS up to 100% of Rated Breakdown and

VGS of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS

- Typically Survives 2E12 if Current Limited to IAS

• Photo Cur rent

- 21nA Per-RAD (Si)/s Typically

• Neutron

- Maintain Pre-R AD Specifications

for 1E13 Neu tr ons/cm 2

- Usable to 1E14 Neut rons/cm2

Symbol

Packaging

SMD2

Ordering Information

RAD LEVEL SCREENING LEVEL P ART NUMBER/BRAND

10K Engineering Samples FSP YC264D1

100K TXV FSPYC264R3

100K Space FSPYC264R4

300K TXV FSPYC264F3

300K Space FSPYC264F4

June 2001

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Data S heet

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSPYC264R, FSPYC264F UNITS

Drain to Source Vo ltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 250 V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 250 V

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID45 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID29 A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 160 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±30 V

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT208 W

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T83 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Single Pulsed Avala nche Current, L = 100µH (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . IAS 85 A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I S45 A

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 160 A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC

Weight (Typical) 3.3(Typical) g

CAUTIO N: S tresses abov e those l is ted in “ A bsolute Max imum R a tings” may cause per manen t dam age to th e de vice. This is a s tress on ly r ating and ope rat ion of th e

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Speci fications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Dr ain to Source Breakdow n Voltage BVDSS ID = 1mA, VGS = 0V 250 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS,

ID = 1mA TC = -55oC--5.5V

TC = 25oC 2.0 - 4.5 V

TC = 125oC1.0--V

Z ero Gat e V ol tage D rai n C urr e nt IDSS VDS = 200V,

VGS = 0V TC = 25oC--25

µA

TC = 125oC--250

µA

Gate to Source Leakage Current IGSS VGS = ±30V TC = 2 5oC - - 100 nA

TC = 125oC - - 200 nA

Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 45A - - 2.21 V

Drain to Source On Resistance rDS(ON)12 ID = 29A,

VGS = 12V TC = 25oC - 0.040 0.046 Ω

TC = 125oC--0.087

Ω

Turn -On Delay Time td(ON) VDD = 12 5V, ID = 45 A,

RL = 2 .8Ω, VGS = 12V,

RGS = 2.35Ω

--35ns

Rise Time tr--70ns

Turn-Off Delay Time td(OFF) --70ns

Fa ll Time tf--15ns

Total Gate Charge Qg(12) VGS = 0V to 12V 125V < VDD < 200

VID = 45A - 115 140 nC

Gate Charge Source Qgs -3545nC

Gate Charge Drain Qgd -3545nC

Gate Charge at 20V Qg(20) VGS = 0V to 20V - 195 - nC

Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 12 - nC

Plateau Voltage V(PLATEAU) ID = 45A, VDS = 15V - 7 - V

Input Capacitance CISS VDS = 25V, VGS = 0V,

f = 1MHz - 6100 - pF

Output Capacitance COSS -875- pF

Reverse Transfer Capacita nce CRSS -35-pF

Thermal Resistance Junction to Case RθJC - - 0.60 oC/W

FS PYC 264R, FS PYC264 F

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage VSD ISD = 45A - - 1.2 V

Reverse Recovery Time trr ISD = 45A, dISD/dt = 100A/µs - - 590 ns

Reverse Recovery Charge QRR -6.8- µC

Electrical Specification s up to 300K RAD TC = 25oC, Unless O therwise Specified

PARAMET ER SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS100K RAD 300K RAD

Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 250 - 250 - V

Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 2.0 4.5 1.5 4.5 V

Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±30V, VDS = 0V -100-100nA

Z ero Gat e Leak ag e (Note 3) IDSS VGS = 0, VDS = 200V - 25 - 50 µA

Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 45A - 2. 21 2.7 0 V

Dr ain to Source On Re sistance (N otes 1, 3) rDS(ON)12 VGS = 12V, ID = 29A - 0.046 - 0.055 Ω

NOTES:

1 . Pulse test, 300µs Ma x .

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V , VDS = 80% BVDSS.

Single Event Effects (SEB, SEGR) Note 4

TEST SYMBOL

ENVIRONMENT (NOTE 5) APPLIED

VGS BIAS

(V)

(NOTE 7)

MAXIMUM

VDS BIAS (V)

(NOTE 6)

TYPICAL LET

(MeV/mg/cm) TYPICAL RANGE (µ)

Single Event Effects Safe Operating Area SEESOA 37 36 -10 250

37 36 -15 200

60 32 -2 200

60 32 -8 150

82 28 0 150

82 28 -5 100

NOTES:

4. Te sting conducted at Brookhaven National La bs or Texas A& M .

5 . Fl uence = 1E5 ions/cm2 (typical), T = 25oC.

6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.

7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Performance Curves

Unless Otherwise Specified

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. TYPICAL SEE SIGNATURE CURVE

120

00-20

160

LET = 60MeV/mg/cm2, RANGE = 32µ

LET = 37MeV/mg/cm2, RANGE = 36µ

LET = 82MeV/mg/cm2, RANGE = 28µ

VDS (V)

200

240

-4 -8 -12 -16

VGS (V)

TEMP = 25oC

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

280

VDS (V)

LET = 82 GOLD

LET = 60 IODINE

240

200

160

120

-30

-5

-10

-15

-20

-25

(V)

280

LET = 37 BROMINE

FS PYC 264R, FS PYC264 F

FIGURE 3. TYPICAL DRAIN INDUCT ANCE REQUIRED T O

LIMIT GAMMA DOT CURRENT TO IAS

FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 5. FORWAR D BIAS SAFE OPERATING AREA FIGURE 6. BASIC GATE CHARGE WAVEFORM

FIGURE 7. TY PICA L NOR MAL IZED rDS(ON) vs JUNCTION

TEMPERATURE FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS

Performance Curves

Unless Otherwise Specified (Continued)

30010010

LIMITING INDUCTANCE (HENRY)

DRAIN SUPPLY (V)

1000

ILM = 10A

300A

1E-4

1E-5

1E-6

100A

30A

1E-7

1E-3

ID, DRAIN (A)

, CASE TEMPERATURE (

150

100

-50

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

10 100

0.1

500

ID, DRAIN CURRENT (A)

100µs

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

10ms

1ms

1000

TC = 25oC

CHARGE

12V

2.5

2.0

1.5

1.0

0.5

0.0-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED rDS(ON)

PULSE DURATION = 250ms, VGS = 12V, ID = 29A

86420

200

160

120

, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN TO SOURCE CURRENT (A)

= 6V

= 8V

= 10V

= 12V

= 14V

= 6 VOLTS

DESCENDING ORDER

FS PYC 264R, FS PYC264 F

FIGURE 9. NORM ALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING

Performance Curves

Unless Otherwise Specified (Continued)

NORMALIZED THERMAL RESPONSE (ZqJC)

t, RECTANGULAR PULSE DURATION (s)

10-5 10-4 10-3 10-2 10-1 100101

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

0.5

10-3

10-2

10-1

100

101

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

PDM

t1t2

300

100

10.01 0.1 1

tAV, TIME IN AVALANCHE (ms)

0.001

IAS, AVALANCHE CURRENT (A)

tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)

IF R = 0

STARTING TJ = 150oC

STARTING TJ = 25oC

IF R ≠ 0

Test Circuits and Waveforms

FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 12. UNCLAMPED ENERGY WAVEFORMS

VGS ≤ 20V

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

50Ω

50V-150V

IAS

ELECTRONIC SWITCH OPENS

WHEN IAS IS REACHED

CURRENT

TRANSFORMER

DSS

FS PYC 264R, FS PYC264 F

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).

FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 14. RESISTIVE SWITCHING WAVEFORMS

Test Circuits and Waveforms

(Continued)

VDS

DUT

RGS

VGS = 12V

VDD

d(ON)

90%

10%

90%

10%

d(OFF)

OFF

90%

50%

10%

PULSE WIDTH

Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified

PARAMET ER SYMBOL TEST CONDITIO NS MAX UNITS

Gate to Source Leakage Current IGSS VGS = ±30V ±20 (Note 7) nA

Z ero Gat e V ol tage D rai n C urr e nt IDSS VDS = 80% Rated Value ±25 (Note 7) µA

Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID±20% (Note 8) Ω

Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V

NOTES:

8. Or 100% of Initial Reading (whichever is greater).

9. Of Initial Reading.

Screenin

Information

TEST JANTXV EQUIVAL ENT JANS EQUIVAL ENT

Unclamped Inductive Switching VGS(PEAK) = 20V, L = 0.1mH; Limit = 85A VGS(PEAK) = 20V, L = 0.1mH; Limit = 85A

Thermal Response tH = 10ms; VH = 25V; IH = 4A; LIM IT = 55m V t H = 10ms; VH = 25V; IH = 4A; LIMIT = 55mV

Ga te Stres s VGS = 45V, t = 250µsV

GS = 45V, t = 250µs

Pind Optional Required

Pre Burn-In Tests (Note 9) MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC)

Steady State Gate

Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B

VGS = 80% of Rated Value,

TA = 150oC, Time = 48 hours

MIL-STD-750, Met hod 1042, Co nditi on B

VGS = 80% of Rated Value,

TA = 150 oC, Time = 48 hours

Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests

and Limits Table All Delta Parameters Listed in the Delta Tests

and Limit s Table

Steady State Reverse

Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A

VDS = 80% of Rated Value,

TA = 150oC, Time = 160 hours

MIL-STD-750, Met hod 1042, Co nditi on A

VDS = 80% of Rated Value,

TA = 150 oC, Time = 240 hours

PDA 10% 5%

Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A,

Subgroups 2 and 3

NOTE:

10. Test limits are identical pre and post burn-in.

Additional Tests

PARAMET ER SYMBOL TEST CONDITIO NS MAX UNITS

Safe Operating Area SOA VDS = 200V, t = 10ms 1.0 A

T he rm al I m pe da nc e ∆VSD tH = 500ms; VH =20V; IH = 4A

HEAT SINK REQUIRED 115 mV

FS PYC 264R, FS PYC264 F

Rad Hard Data Packages - Fairchild Power Transistors

TXV Equ iv a lent

1. RAD HARD TXV EQUI VALENT - STANDARD DATA

PACKAGE

A. Certificate of Compliance

B. Assembly Flow Chart

C. Pr econditioning - Attributes Data Sheet

D. G r ou p A - Attribute s Dat a She et

E. G roup B - Attr ib utes Dat a Sheet

F. Group C - Attributes Data Sheet

G. Gr ou p D - At t r ib ute s Dat a S he et

2. RAD HARD TXV EQUI VALENT - OPTIONAL DATA

PACKAGE

A. Certificate of Compliance

B. Assembly Flow Chart

C. Pr econditioning - Attributes Data Sheet

- Pre and Post Burn-In Read and Record

Data

D. G r ou p A - Attribute s Dat a She et

E. G roup B - At t ributes Dat a She et

- Pre and Post Read and Record Data for

Intermittent Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and Post High Temperature Operating

Life Read and Record Data (Subgroup B6)

F. Group C - Attributes Data Sheet

- Pre and Post Read and Record Data for

Intermittent Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

G. Gr ou p D - At t r ib ute s Dat a S he et

- Pre and Post RAD Read and Record Data

Class S - Equivalents

1. RAD HARD “S” EQUIVALENT - STANDARD DATA

PACKAGE

A. Certificate of Compliance

B. Serializa tion Records

C. Assembly Flow Cha rt

D. SE M Photos and Report

E. Preconditi oning - At tributes Data Sheet

- HTRB - Hi Temp Gate Stress Post

Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post

Reverse Bias Delta Data

F. Group A - Attributes Data Sheet

G. Gr ou p B - Att r ib utes Dat a Sheet

H. G r ou p C - A tt r ib ute s Dat a S he et

I. Group D - Attributes Data Sheet

2. RAD HARD MAX. “S” EQUIVALENT - O PTIONAL

DATA PACKAGE

A. Certificate of Compliance

B. Serializa tion Records

C. Assembly Flow Cha rt

D. SE M Photos and Report

E. Preconditi oning - At tributes Data Sheet

- HTRB - Hi Temp Gate Stress Post

Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post

Reverse Bias Delta Data

- X- Ray an d X -R ay Report

F. Group A - Attributes Data Sheet

- Subgroup s A2, A3, A4, A5 and A7 D ata

G. Gr ou p B - Att r ib utes Dat a Sheet

- Subgroup s B1, B3, B4, B5 and B6 D ata

H. G r ou p C - A tt r ib ute s Dat a S he et

- Subgroups C1, C2, C3 and C6 Data

I. Group D - Attributes Data Sheet

- Pr e and P o st R ad ia t io n Da t a

FS PYC 264R, FS PYC264 F

SMD2

3 PAD CERAMIC LEADLESS CHIP CARRIER

E1E2

1 - GATE

2 - SOURCE

3 - DRAIN

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A 0.130 0.142 3.30 3.60 3

b 0.135 0.145 3.43 3.68 -

D 0.520 0.530 13.20 13.46 -

D10.435 0.445 11.05 11.30 -

D20.115 0.125 2.92 3.17 -

E 0.685 0.695 17.40 17.65 -

E10.470 0.480 11.94 12.19 -

E20.152 0.162 3.86 4.11 -

NOTES:

1. No current JEDEC outline for this package.

2. Co ntrolling dimension: I NCH.

3. Measurement prior to pre-solder coating the mounting pads.

4. Revision 3 dated 5-00.

FS PYC 264R, FS PYC264 F

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specific ations may chang e in

any manner without notice.

Prelimin ary First Production This datasheet contains prelimina ry data, and

supplementary data will be p ublished at a later date.

Fairchild Semiconduc tor reserves the right to make

changes at any tim e without notice in order to improve

design.

No I denti ficat ion Needed Full Produc tion This datasheet c ontains final spec ifications . Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improv e design.

Obsolete Not In Produc tion This datasheet c ontains specifi c ations on a product

that h as been disc ontinued by Fairchild semi conductor.

The datasheet is printed for reference information only.

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not int ended to be an exhausti v e list o f all suc h trademarks.

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provided in the labeling, can be reasonably expected to

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