2N930
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N930J)
• JANTX level (2N930JX)
• JANTXV level (2N930JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-18 metal can
• Also available in chip configuration
• Chip geometry 0307
• Reference document:
MIL-PRF-19500/253
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 45
Volts
Collector-Base Voltage VCBO 60
Volts
Emitter-Base Voltage VEBO 6
Volts
Collector Current, Continuous IC 30
mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 360
2.06
mW
mW/°C
Thermal Resistance RθJA 485 °C/W
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. H 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. H 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N930
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 10 mA 45 Volts
Collector-Base Cutoff Current ICBO1
ICBO2
VCB = 60 Volts
VCB = 45 Volts
10
10
µA
nA
Collector-Emitter Cutoff Current ICEO V
CE = 5 Volts 2 nA
Collector-Emitter Cutoff Current ICES1
ICES2
VCE = 45 Volts
VCE = 45 Volts, TA = 150°C
2
10
nA
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 6 Volts
VEB = 5 Volts
10
5
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 10 µA, VCE = 5 Volts
IC = 500 µA, VCE = 5 Volts
IC = 10 mA, VCE = 5 Volts
IC = 10 µA, VCE = 5 Volts
TA = -55°C
100
150
20
300
600
Base-Emitter Saturation Voltage VBEsat1 I
C = 10 mA, IB = 0.5 mA 0.6 1 Volts
Collector-Emitter Saturation Voltage VCEsat1 I
C = 10 mA, IB = 0.5 mA 1 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 500 µA,
f = 30 MHz 1.5 6
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 5 Volts, IC = 1 mA,
f = 1 kHz 150 600
Open Circuit Output Capacitance COBO VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 8
pF
Noise Figure
NF1
NF2
NF3
VCE = 5 Volts, IC = 10 µA,
Rg = 10 kΩ,
f = 100 Hz
f = 1 kHz
f = 10 kHz
5
3
3
dB
Short Circuit Input Impedance hie V
CB = 5V, IC = 1mA, f = 1kHz 25 32
Ω
Open Circuit Output Admittance hoe VCB = 5V, IC = 1mA, f = 1kHz 1 mho
Open Circuit reverse Voltage Transfer
Ratio hre VCB = 5V, IC = 1mA, f = 1kHz 6x10-4
