Schottky Barrier Diodes (SBD)
1
Publication date: August 2001 SKH00067AED
MA3SE02
Silicon epitaxial planar type
For cellular phone
Features
High-frequency wave detection is possible
Low forward voltage VF
Small terminal capacitance Ct
SS-Mini type 3-pin package
Absolute Maximum Ratings Ta = 25°C
Marking Symbol: M6B
Absolute Maximum Ratings Ta = 25°C ± 3°C
Internal Connection
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) IRVR = 15 V 200 nA
Forward voltage (DC) VF1 IF = 1 mA 0.40 V
VF2 IF = 35 mA 1.0
Terminal capacitance CtVR = 0 V, f = 1 MHz 1.2 pF
Forword dynamic resistance rfIF = 5 mA 9
12
3
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
EIAJ : SC-89 SSMini3-F2 Package
Unit: mm
0.28±0.05
3
12
0.28±0.05
(0.80)
1.60+0.05
–0.03
0.12+0.05
–0.02
0.60+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3°
(0.44)(0.44)
0.88
(0.375)
+0.05
–0.03
0.80±0.05
(0.80)
1.60±0.05
3°
Parameter Symbol Rating Unit
Reverse voltage (DC) VR20 V
Peak reverse voltage VRM 20 V
Forward current (DC)
Single IF35 mA
Series25
Peak forward current
Single IFM 100 mA
Series70
Junction temperature Tj125 °C
Storage temperature Tstg 55 to +125 °C
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
2
MA3SE02
SKH00067AED
IR VRCt VR
10
2
10
3
0 5 10 15 20 25
10
1
1
10
10
2
10
3
Reverse voltage VR (V)
Reverse current IR (µA)
T
a
= 125°C
75°C
25°C
0
1.2
1.0
0.8
0.6
0.4
0.2
0 5 10 15 20 25
Reverse voltage VR (V)
Terminal capacitance C
t
(pF)
T
a
= 25°C
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
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2001 MAR