CAS300M17BM2 1.7kV, 8.0 m All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-RecTM Diode Features * * * * * * * VDS 1.7 kV Esw, Total @ 300A, 150 C 23 mJ RDS(on) 8.0 m Package 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits * * * * * Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications * * * * * HF Resonant Converters/Inverters Solar and Wind Inverters UPS and SMPS Motor Drive Traction Part Number Package Marking CAS300M17BM2 Half-Bridge Module CAS300M17BM2 Maximum Ratings (TC = 25C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax Drain - Source Voltage 1.7 kV VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/20 V Recommended operational values ID ID(pulse) Continuous MOSFET Drain Current Pulsed Drain Current 325 225 900 A A 556 IF TJmax TC ,TSTG Continuous Diode Forward Current 353 VGS = 20 V, TC = 25 C VGS = 20 V, TC = 90 C Notes Fig. 26 Pulse width tp limited by TJ(max) VGS = -5 V, TC = 25 C A Junction Temperature -40 to +150 C Case and Storage Temperature Range -40 to +125 C VGS = -5 V, TC = 90 C Visol Case Isolation Voltage 5.0 kV AC, 50 Hz , 1 min LStray Stray Inductance 15 nH Measured between terminals 2 and 3 PD Power Dissipation 1760 W TC = 25 C, TJ = 150 C Subject to change without notice. www.cree.com Fig. 25 1 Electrical Characteristics (TC = 25C unless otherwise specified) Symbol VDSS VGS(th) Parameter Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. Max. Unit 1.7 kV VGS, = 0, ID = 2 mA Fig. 29 V VD = VG, ID = 15 mA Fig. 7 700 2000 A VDS = 1.7 kV, VGS = 0 1500 4000 A VDS = 1.7 kV,VGS = 0, TJ = 150 C nA VGS = 25 V, VDS = 0 Drain - Source Blocking Voltage 1.8 On State Resistance 2.5 1 600 8.0 10 16.2 20 m 133 VGS = 20 V, IDS = 300 A VGS = 20V, IDS = 300 A,TJ = 150 C VDS = 20 V, IDS = 300 A Note Fig. 4, 5, 6 gfs Transconductance Ciss Input Capacitance 20 Coss Output Capacitance 2.5 Crss Reverse Transfer Capacitance 0.08 Eon Turn-On Switching Energy 13.0 mJ EOff Turn-Off Switching Energy 10.0 mJ f = 1 MHz, VAC = 25 mV nC VDD= 900 V, VGS = -5V/+20V, ID= 300 A, Per JEDEC24 pg 27 Fig. 15 VDD = 900V, VGS = -5/+20V, ID = 300 A, RG(ext) = 2.5 , Timing relative to VDS Note: IEC 60747-8-4, pg 83 Inductive load Fig. 23 IF = 300 A, VGS = 0 Fig. 10 IF = 300 A, VGS = 0 , TJ = 150 C Fig. 11 RG (int) S Test Conditions 131 nF Internal Gate Resistance 3.7 QGS Gate-Source Charge 273 QGD Gate-Drain Charge 324 QG Total Gate Charge 1076 td(on) Turn-on delay time 105 ns 72 ns 211 ns tr td(off) tf VSD QC Rise Time Turn-off delay time Fall Time 56 Diode Forward Voltage Total Capacitive Charge ns 1.7 2.0 2.2 2.5 4.4 V C VDS = 20 V, ID = 300 A, TJ = 150 C Fig. 8 VDS = 1 kV, f = 200 kHz, VAC = 25 mV Fig. 16, 17 VDD = 900 V, VGS = -5V/+20V ID = 300 A, RG(ext) = 2.5 Load = 77 H, TJ = 150 C Note: IEC 60747-8-4 Definitions Fig. 22 ISD = 300 A, VDS = 900 V, TJ = 25C, diSD/dt = 9 kA/s, VGS = -5 V Thermal Characteristics Symbol Parameter Min. Typ. Max. RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.067 0.071 RthJCD Thermal Resistance Juction-to-Case for Diode 0.060 0.065 Unit Test Conditions Fig. 27 C/W Fig. 28 Additional Module Data Symbol Parameter Unit 300 g Test Condtion W Weight M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 9 mm Terminal to terminal 30 mm Terminal to terminal 40 mm Terminal to baseplate Creepage Distance 2 Max. CAS300M17BM2,Rev. B Note Typical Performance Figure 1. Output Characteristics T J = -40 C 3 Figure 2. Output Characteristics TJ = 25 C Figure 3. Output Characteristics TJ = 150 C Figure 4. Normalized On-Resistance vs. Temperature Figure 5. On-Resistance vs. Drain Current For Various Temperatures Figure 6. On-Resistance vs. Temperature for Various Gate-Source Voltage CAS300M17BM2,Rev. B Typical Performance Figure 7. Threshold Voltage vs. Temperature 4 Figure 8. Transfer Characteristic for Various Junction Temperatures Figure 9. Diode Characteristic at -40 C Figure 10. Diode Characteristic at 25 C Figure 11. Diode Characteristic at 150 C Figure 12. 3rd Quadrant Characteristic at -40 C CAS300M17BM2,Rev. B Typical Performance Figure 13. 3rd Quadrant Characteristic at 25 C 5 Figure 14. 3rd Quadrant Characteristic at 150 C Figure 15. Gate Charge Characteristics Figure 16. Capacitances vs. Drain-Source Voltage (0 - 200 V) Figure 17. Capacitances vs. Drain-Source Voltage (0 - 1 kV) Figure 18. Output Capacitor Stored Energy CAS300M17BM2,Rev. B Typical Performance Figure 19. Inductive Switching Energy vs. Drain Current For VDS = 900V, RG = 2.5 Figure 21. Inductive Switching Energy vs. RG(ext) Figure 23. Timing vs. RG(ext) 6 CAS300M17BM2,Rev. B Figure 20. Inductive Switching Energy vs. Drain Current For VDS = 1200 V, RG = 2.5 Figure 22. Inductive Switching Energy vs. Temperature Figure 24. Resistive Switching Time Description Typical Performance Figure 25. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature Figure 27. MOSFET Junction to Case Thermal Impedance Figure 29. Safe Operating Area 7 CAS300M17BM2,Rev. B Figure 26. Continous Drain Current Derating vs Case Temperature Figure 28. Diode Junction to Case Thermal Impedance Schematic Package Dimensions (mm) CAS300M17BM2 8 CAS300M17BM2,Rev. B Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots. Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] Copyright (c) 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 9 CAS300M17BM2 Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power