1
Subject to change without notice.
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CAS300M17BM2
1.7kV, 8.0 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-RecTM Diode
Features
• Ultra Low Loss
• High-Frequency Operation
• Zero Reverse Recovery Current from Diode
• Zero Turn-off Tail Current from MOSFET
• Normally-off , Fail-safe Device Operation
• Ease of Paralleling
• Copper Baseplate and Aluminum Nitride Insulator
System Benefi ts
• Enables Compact and Lightweight Systems
• High Effi ciency Operation
• Mitigates Over-voltage Protection
• Reduced Thermal Requirements
• Reduced System Cost
Applications
• HF Resonant Converters/Inverters
• Solar and Wind Inverters
• UPS and SMPS
• Motor Drive
• Traction
Package 62mm x 106mm x 30mm
Maximum Ratings (TC = 25˚C unless otherwise specifi ed)
Symbol Parameter Value Unit Test Conditions Notes
VDSmax Drain - Source Voltage 1.7 kV
VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values
VGSop Gate - Source Voltage -5/20 V Recommended operational values
IDContinuous MOSFET Drain Current 325 AVGS = 20 V, TC = 25 ˚C Fig. 26
225 VGS = 20 V, TC = 90 ˚C
ID(pulse) Pulsed Drain Current 900 A Pulse width tp limited by TJ(max)
IFContinuous Diode Forward Current
556
A
VGS = -5 V, TC = 25 ˚C
353 VGS = -5 V, TC = 90 ˚C
TJmax Junction Temperature -40 to +150 ˚C
TC ,TSTG Case and Storage Temperature Range -40 to +125 ˚C
Visol Case Isolation Voltage 5.0 kV AC, 50 Hz , 1 min
LStray Stray Inductance 15 nH Measured between terminals 2 and 3
PDPower Dissipation 1760 W TC = 25 ˚C, TJ = 150 ˚C Fig. 25
Part Number Package Marking
CAS300M17BM2 Half-Bridge Module CAS300M17BM2
VDS 1.7 kV
Esw, Total @ 300A, 150 ˚C 23 mJ
RDS(on) 8.0 mΩ
2CAS300M17BM2,Rev. B
Electrical Characteristics (TC = 25˚C unless otherwise specifi ed)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
VDSS Drain - Source Blocking Voltage 1.7 kV VGS, = 0, ID = 2 mA Fig. 29
VGS(th) Gate Threshold Voltage 1.8 2.5 V VD = VG, ID = 15 mA Fig. 7
IDSS Zero Gate Voltage Drain Current 700 2000 μA VDS = 1.7 kV, VGS = 0
1500 4000 μA VDS = 1.7 kV,VGS = 0, TJ = 150 ˚C
IGSS Gate-Source Leakage Current 1 600 nA VGS = 25 V, VDS = 0
RDS(on) On State Resistance 8.0 10 mΩ VGS = 20 V, IDS = 300 A Fig. 4,
5, 6
16.2 20 VGS = 20V, IDS = 300 A,TJ = 150 ˚C
gfs Transconductance 133 SVDS = 20 V, IDS = 300 A Fig. 8
131 VDS = 20 V, ID = 300 A, TJ = 150 ˚C
Ciss Input Capacitance 20
nF VDS = 1 kV, f = 200 kHz,
VAC = 25 mV
Fig.
16, 17
Coss Output Capacitance 2.5
Crss Reverse Transfer Capacitance 0.08
Eon Turn-On Switching Energy
13.0 mJ VDD = 900 V, VGS = -5V/+20V
ID = 300 A, RG(ext) = 2.5 Ω
Load = 77 μH, TJ = 150 ˚C
Note: IEC 60747-8-4 Defi nitions
Fig. 22
EOff Turn-Off Switching Energy
10.0 mJ
RG (int) Internal Gate Resistance 3.7 Ω f = 1 MHz, VAC = 25 mV
QGS Gate-Source Charge 273
nC VDD= 900 V, VGS = -5V/+20V,
ID= 300 A, Per JEDEC24 pg 27 Fig. 15
QGD Gate-Drain Charge 324
QGTotal Gate Charge 1076
td(on) Turn-on delay time 105 ns VDD = 900V, VGS = -5/+20V,
ID = 300 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Note: IEC 60747-8-4, pg 83
Inductive load
Fig. 23
trRise Time 72 ns
td(off ) Turn-off delay time 211 ns
tfFall Time 56 ns
VSD Diode Forward Voltage 1.7 2.0 VIF = 300 A, VGS = 0 Fig. 10
2.2 2.5 IF = 300 A, VGS = 0 , TJ = 150 ˚C Fig. 11
QCTotal Capacitive Charge 4.4 μC ISD = 300 A, VDS = 900 V, TJ =
25°C, diSD/dt = 9 kA/μs, VGS = -5 V
Additional Module Data
Symbol Parameter Max. Unit Test Condtion
W Weight 300 g
M Mounting Torque 5 Nm To heatsink and terminals
Clearance Distance 9 mm Terminal to terminal
Creepage Distance 30 mm Terminal to terminal
40 mm Terminal to baseplate
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.067 0.071 ˚C/W Fig. 27
RthJCD Thermal Resistance Juction-to-Case for Diode 0.060 0.065 Fig. 28
3CAS300M17BM2,Rev. B
Typical Performance
Figure 2. Output Characteristics TJ = 25 ˚C Figure 1. Output Characteristics TJ = -40 ˚C
Figure 6.
On-Resistance vs. Temperature for
Various Gate-Source Voltage
Figure 4. Normalized On-Resistance vs. Temperature
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 3. Output Characteristics TJ = 150 ˚C
4CAS300M17BM2,Rev. B
Typical Performance
Figure 8. Transfer Characteristic for Various
Junction Temperatures
Figure 10.
Diode Characteristic at 25 ˚C
Figure 9. Diode Characteristic at -40 ˚C
Figure 12. 3
rd
Quadrant Characteristic at -40
˚
C
Figure 7. Threshold Voltage vs. Temperature
Figure 11.
Diode Characteristic at 150 ˚C
5CAS300M17BM2,Rev. B
Typical Performance
Figure 14.
3
rd
Quadrant Characteristic at 150
˚
C
Figure 13.
3
rd
Quadrant Characteristic at 25
˚
C
Figure 18.
Output Capacitor Stored Energy
Figure 15. Gate Charge Characteristics Figure 16. Capacitances vs. Drain-Source
Voltage (0 - 200 V)
Figure 17.
Capacitances vs. Drain-Source
Voltage (0 - 1 kV)
6CAS300M17BM2,Rev. B
Typical Performance
Figure 19. Inductive Switching Energy vs.
Drain Current For VDS = 900V, RG = 2.5 Ω
Figure 20. Inductive Switching Energy vs.
Drain Current For VDS = 1200 V, RG = 2.5 Ω
Figure 22. Inductive Switching Energy vs. TemperatureFigure 21. Inductive Switching Energy vs. RG(ext)
Figure 23. Timing vs. RG(ext) Figure 24. Resistive Switching Time Description
7CAS300M17BM2,Rev. B
Typical Performance
Figure 25. Maximum Power Dissipation (MOSFET) De-
rating vs. Case Temperature
Figure 26. Continous Drain Current Derating vs Case
Temperature
Figure 27. MOSFET Junction to Case Thermal Impedance Figure 28. Diode Junction to Case Thermal Impedance
Figure 29. Safe Operating Area
8CAS300M17BM2,Rev. B
Schematic
Package Dimensions (mm)
CAS300M17BM2
Module Application Note:
The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules.
Therefore, special precautions are required to realize the best performance. The interconnection between the gate
driver and module housing needs to be as short as possible. This will aff ord the best switching time and avoid the
potential for device oscillation. Also, great care is required to insure minimum inductance between the module and
link capacitors to avoid excessive VDS overshoots.
Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2.
[CPWR-AN12, CPWR-AN13]
99 CAS300M17BM2 Rev. B
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defi brillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffi c control systems.
Notes
