MITSUBISHI SEMICONDUCTORS <HVIC> M63954P HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M63954P is high voltage integrated circuit designed for electronic ballast, Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES 16 CNT VCO 2 15 OV CVCO 3 14 GND 13 LO 12 VCC 11 HVCC LNTH 7 10 HO LN 9 HGND M63954P FLOATING SUPPLY VOLTAGE ................................. 600V OUTPUT CURRENT ............................................. 500mA HALF BRIDGE DRIVER BUILT-IN OSCILLATOR DIP_16 PACKAGE BUILT-IN REGULATOR VREG 1 RVCO 4 AB 5 ABTH APPLICATIONS The M63954P can be used for fixed or continuous lamp control of fluorescent lamp inverter. 6 8 PACKAGE TYPE 16P4 BLOCK DIAGRAM CVCO 3 4 RVCO 11 HVCC VCO 2 - + + - + - 0.652VREG SQ Dead Time Level Shift SQ 10 HO R RQ 9 HGND 0.773VREG 13 LO VREG 1 VREG VREG START LN 8 - + LNTH 7 DELAY QS DELAY + 5 AB - 6 ABTH R UV VCC 12 DELAY QS R DELAY + 15 OV - 1/2VREG 14 GND CNT 16 + - DELAY Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63954P HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS Symbol HGND HVCC VCC VOV VAB IAB VABTH VLN ILN VLNTH VVCO IHO ILO Pt Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Offset Voltage High Side Floating Supply Voltage Low Side Fixed Supply Voltage OV Input Voltage Conditions HGND=GND Ratings Unit 600 -0.5~+20 -0.5~+20 V V AB Input Voltage AB Input Current -0.5 ~ VCC+0.5 -0.5 ~ VCC+1.0 2 ABTH Input Voltage LN Input Voltage LN Input Current -0.5 ~ VCC+0.5 -0.5 ~ VCC+1.0 2 LNTH Input Voltage VCO Input Voltage High Side Output Current -0.5 ~ VCC+0.5 -0.5 ~ VCC+0.5 Low Side Output Current Package Power Dissipation V mA V V mA V V mA 500 500 1.56 Ta = 25C, On Board Ta > 25C, On Board Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature V V mA W mW/C 12.5 25 150 Operation Temperature Storage Temperature C/W C C -20 ~ +80 -40 ~ +125 C ELECTRICAL CHARACTERISTICS (Ta=25C, GND=HGND, VCC=HVCC=15V, unless otherwise specified) Symbol Parameter HVCC High Side Floating Supply Voltage VCC Low Side Fixed Supply Voltage VREG ICC1 Internal Supply Voltage Standby Current ICC2 ON Suspension Oscillate Current ICC3 ON Oscillation Current (50Hz) ICC4 VUVr ON Oscillation Current (115kHz) VCC UV Reset Voltage VUVt tUV VOV tOV OV Filter Time Test conditions Limits Unit Min. 13 13 Typ. 15 Max. 17 15 17 V VCC=15V, NO Load 6.9 VCC=15V, CNT=5V, OV=5V VCC=15V, CNT=0V -- -- 7.2 0.75 7.5 1.0 V mA 2.0 4.0 mA VCC=15V, RVCO1=15k, VVCO=0.33VREG RVCO2=39k, CVCO=100pF, VVCO=0.42VREG 2.0 2.0 5.0 8.0 mA 8 10 12 11 mA V HVCC-HGND V VCC UV Trip Voltage 9.0 5.5 6.5 7.5 V VCC Supply UV Filter Time OV Protection Vth 14 3.4 -- 3.6 100 3.8 s V 30 -- 150 s -0.5 -- -0.08 -- A -- -- 250 125 kHz kHz IOV OV Input Leak Current VOV=0V fVCO fO VCO Frequency Set Up Limit Output Frequency Set Up Limit LO, HO VVCO VCO Input Voltage Limit -- 1.5 IVCO VCO Input Leak Current VCVCO ICVCO CVCO Input Voltage CVCO Input Leak Current VVCO=0V VREG=7.2V -2 5.5 VCVCO=0V, VVCO >VCVCO IrRVCO RVCO Leak Current -2 -- VSRVCO RVCO Saturation Voltage VCVCO=0V, VREG=7.2V, VRVCO=10V VCVCO=6V, VREG=7.2V, IRVCO=10mA -- -- VREG-1.5 V -0.66 -- A 5.55 -0.66 5.6 -- V A -- 0.5 A -- 500 mV Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63954P HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25C, GND=HGND, VCC=HVCC=15V, unless otherwise specified) Symbol Parameter VLN LN Input Voltage Limit VLNTH LNTH Input Voltage Limit LN Offset Voltage LN Input Leak Current LNTH Input Leak Current VLN>VLNTH VLN>VLNTH, VCC<VUVr VLN > VLNTH, VLNTH=5V LNTH Input Hysteresis Current tLN VAB LN Filter Time AB Input Voltage Limit VABTH VABIO ABTH Input Voltage Limit IAB AB Input Leak Current IABTH tAB ABTH Input Leak Current AB Filter Time VCNT CNT Input Threshold Voltage VCNTh CNT Input Hysteresis Voltage ICNT CNT Input Leak Current tCNT IRFC CNT Filter Time tDEAD Dead Time VHOH1 VHOH2 VHOH3 VHOL1 HO Output Voltage VHOL2 VHOL3 VLOH1 VLOH2 VLOH3 VLOL1 VLOL2 VLOL3 tr -- -1 -1 -0.22 -0.22 20 40 14 0 -- -- VAB<VABTH -- -0.08 VAB>VABTH -0.5 -0.08 30 3.4 -- 3.6 0.8 -0.5 1.0 -0.08 30 -- VHGND=600V C=1000pF -- 1.0 -- -- IHO=0mA IHO=-20mA IHO=-200mA 14 14.4 10 1.0 13 5.5 IHO=0mA IHO=20mA IHO=200mA -- 5 -- -- 0.5 6 ILO=0mA ILO=-20mA 14 10 1.0 -- 14.4 -- -- -- 0.5 6 -- ILO=200mA Amplitude 10% Amplitude 90% Output Rise Time Output Fall Time tf -50 -- ILO=-200mA ILO=0mA ILO=20mA LO Output Voltage Typ. -- -- 0 VCNT=0V Floating Supply Leak Current Min. 1.0 1.0 -50 -0.5 AB Offset Voltage ILNTH ILNTHh VLNIO ILN Limits Test conditions 90%, C=1000pF 10%, C=1000pF 13 5.5 5 Unit Max. VCC-1.5 V VCC-1.5 50 V mV -- A A -- 80 A 100 VREG-1.5 VREG-1.5 50 -- -- 150 3.8 1.2 s V V mV A A s V V -- 150 A s 1.0 A 1.9 -- s V -- V -- 100 V mV 1.0 V 12 -- V V -- V V -- 100 1.0 mV V V 50 12 120 ns 50 120 ns OUTPUT FREQUENCY (RVCO1=15k, RVCO2=15k, CVCO=100pF) Oscillation Frequency 50kHz 60kHz VCO Input Voltage 0.33VREG 0.42VREG Min. -- Typ. 50 Max. -- Unit kHz -- 60 -- kHz Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63954P HIGH VOLTAGE HALF BRIDGE DRIVER DEAD TIME 90% 10% HO tDEAD LO tDEAD 90% 10% OUTPUT RISE TIME FALL TIME 90% 90% 10% 10% HO, LO tr tf Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63954P HIGH VOLTAGE HALF BRIDGE DRIVER PERFORMANCE CURVES Thermal Derating Factor Characteristic 2 ICC-VCC Characteristic 6 5 1.5 4 On Board ICC (mA) Power Dissipation Pt (W) Frequency=115kHz 1 Frequency=50kHz 3 Oscillation suspended 2 0.5 Standby 1 0 Non Board 0 25 50 75 100 125 0 150 8 13 VREG-VCC Characteristic tDEAD-VCC Characteristic 8.0 1.5 1.4 Oscillation suspended 7.0 tDEAD1 tDEAD (s) VREG (V) 7.5 Frequency=50kHz 6.5 1.3 tDEAD2 1.2 1.1 8 13 18 1 23 8 13 VCC (V) 23 VLOL-VCC Characteristic 10 ILO=0mA 8 ILO=-20mA VLOL (V) 15 18 VCC (V) VLOH-VCC Characteristic 20 VLOH (V) 23 VCC (V) Ambient Temperature Ta (C) 6.0 18 10 6 ILO=200mA 4 ILO=-200mA 5 2 ILO=20mA 0 8 13 18 VCC (V) 23 0 8 13 18 ILO=0 23 VCC (V) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63954P HIGH VOLTAGE HALF BRIDGE DRIVER ICC-Ta Caracteristic VREG-Ta Characteristic 6 7.35 5 7.30 ICC4 7.25 VREG (V) ICC (mA) 4 ICC3 3 2 7.15 7.10 Frequency=50kHz ICC2 1 0 -50 Oscillation suspended 7.20 7.05 ICC1 0 50 100 7.00 -50 150 0 50 100 150 Ta (C) Ta (C) VUV-Ta Characteristic tDEAD-Ta Characteristic 12 1.90 VUVr 1.80 10 1.70 tDEAD (s) VUV (V) 8 VUVt 6 1.60 1.50 tDEAD1 1.40 1.30 4 tDEAD2 1.20 2 0 -50 1.10 0 50 100 1.00 -50 150 0 Ta (C) 50 100 150 Ta (C) VLOH-Ta Characteristic VLOL-Ta Characteristic 10 16 9 14 ILO=0mA 12 ILO=-20mA 10 8 6 ILO=-200mA 4 ILO=200mA 6 5 4 3 2 2 0 -50 7 VLOL (V) VLOH (V) 8 ILO=20mA 1 0 50 Ta (C) 100 150 0 -50 0 50 ILO=0mA 100 150 Ta (C) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63954P HIGH VOLTAGE HALF BRIDGE DRIVER PACKAGE OUTLINE 16P4 Plastic 16pin 300mil DIP Lead Material Alloy 42/Cu Alloy 9 1 8 E 16 c Weight(g) 1.0 JEDEC Code - e1 EIAJ Package Code DIP16-P-300-2.54 D A A2 Symbol L A1 SEATING PLANE e b1 b b2 A A1 A2 b b1 b2 c D E e e1 L Dimension in Millimeters Min Nom Max - - 4.5 0.51 - - - 3.3 - 0.4 0.5 0.6 1.4 1.5 1.8 0.9 1.0 1.3 0.22 0.27 0.34 18.8 19.0 19.2 6.15 6.3 6.45 - 2.54 - - 7.62 - 3.0 - - 0 - 15 Sep. 2000