f , $GS- 0 ST SGS-THOMSON HCC/HCF4093B QUAD 2-INPUT NAND SCHMIDT TRIGGERS SCHMITT-TRIGGER ACTION ON EACH INPUT WITH NO EXTERNAL COMPONENTS HYSTERESIS VOLTAGE TYPICALLY 0.9V AT Vpp = 5V AND 2.3V AT Vpp = 10V s NOISE IMMUNITY GREATER THAN 50% OF Vop (typ.) EY F a NO LIMIT ON INPUT RISE AND FALL TIMES (Plastic Package) (Ceramic Frit Seal Package) STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS s QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE 5V, 10V, AND 15V PARAMETRIC RATINGS . INPUT CURRENT, OF 100nA AT 18V AND M1 cr 25 VICE hin Carri = 100% TESTED FOR QUIESCENT CURRENT (Micro Package) _(Plastic Chip Carrier) MEETS ALL REQUIREMENTS OF JEDEC TEN- Boca OER CODES ian TATIVE STANDARD N. 13A, STANDARD SPECIFICATIONS FOR DESCRIPTION OF "B" HCF4093BEY = HCF4093BC1 SERIES CMOS DEVICES" PIN CONNECTIONS DD DESCRIPTION The HCC4093B (extended temperature range) and HCF4093B (intermediate temperature range) are available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4093B consists of four Schmitt-trigger cir- cuits. Each circuit functions as a two-input NAND scosoee gate with Schmitt-trigger action on both inputs. The gate switches at different points for positive and negative-going signals. The difference between the positive voltage (Vp) and the negative voltage (Vn) is defined as hys- teresis voltage (Vu) (see fig. 1). mn Fr FF Oo r< June 1989 1/8 449HCC/HCF4093B FUNCTIONAL DIAGRAM 1 of 4 Schmitt triggers Yoo 1(5,8 120-44 3(6.10.11) nd (7 2(6,9.13)O-\ *ALL INPUTS PROTECTED BY COS/MOS STANDARD PROTECTION NETWORK 5-1887/1 Vss ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vpp* | Supply Voltage :HCC Types 0.5 to + 20 v HCF Types -05to+18 Vv Vi Input Voltage ~0.5 to Vpp + 0.5 Vv li DC input Current (any one input) +10 mA Prot Total Power Dissipation (per package) 200 mW Dissipation per Output Transistor for Top = Full Package-temperature Range 100 mw Top Operating Temperature : HCC Types - 55 to +125 C HCF Types - 40 to + 85 C Tstg Storage Temperature 65 to + 150 C Stresses above those listed under "Absolute Maximum Ratings "may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec- tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to Vss pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit Voo Supply Voltage : HCC Types 3 to 18 v HCF Types 3 to 15 Vv vi Input Voltage 0 to Vpop Vv Top Operating Temperature : HCC Types - 55 to + 125 C HCF Types - 40 to + 85 C 2/8 (7 Scs-THom Tf imicroeectrowics 450HCC/HCF4093B STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditions Value Symbol! Parameter vi Vo | {lol | Vpo Trow* 25C Thigh* Unit () | (Vv) | (WA) | () | Min. | Max. | Min. | Typ. |Max. | Min. |Max. IL Quiescent o/5 5 1 0.02 1 30 Current Hcc [0/10 10 2 0.02 | 2 60 Types | 0/15 15 4 0.02 4 120 0/20 20 20 0.04 | 20 600 pA of 5 5 4 0.02 4 30 ner 0/10 10 8 0.02 8 60 ypes 0/15 15 16 0.02 | 16 120 Vp Positive Trigger a 5 22 | 36 | 22 | 29 | 36 | 22 | 36 Threshold Voltage | a io | 46 | 71 | 46 | 59 | 7.1 | 46 | 7.1 a 15 | 68 |108|] 68 | 88 | 108 | 68 | 10.8 V b 5 2.6 4 2.6 3.3 4 2.6 4 b 10 | 56 | 82 | 56 7 82 | 56 | 82 b 15 | 63 | 12.7 | 63 94 | 12.7 | 63 | 12.7 Vn Negative Trigger a 5 09 | 28 | 09 | 19 | 28 | 09 | 28 Threshold Voltage | a 10 | 25 | 52 | 25 | 39 | 52 | 25 | 52 a 15 4 7.4 4 5.8 7.4 4 7.4 Vv b 5 1.4 3.2 1.4 2.3 3.2 1.4 3.2 b 10 | 3.4 6.6 3.4 5.1 6.6 3.4 6.6 b 15 | 48 9.6 48 7.3 9.6 48 9.6 Vu Hysteresis Voltage| a 5 03 | 16 | 03 | 09 | 16 | 03 | 16 a 10 1.2 3.4 1.2 2.3 3.4 1.2 3.4 a 15 1.6 5 1.6 3.5 5 1.6 5 Vv b 5 0.3 1.6 0.3 0.9 1.6 0.3 1.6 b 10 1.2 3.4 1.2 2.3 3.4 1.2 3.4 b 15 1.6 5 1.6 3.5 5 1.6 5 Von | Output High of 5 <1 |] 5 | 4.95 4.95 4.95 Voltage 0/10 <1 | 10 | 9.95 9.95 9.95 Vv 0/15 <1 15 [14.95 14.95 14.95 Vor Output Low 5/0 <1 5 0.05 0.05 0.05 Voltage 10/0 <1 | 10 0.05 0.05 0.05 Vv 15/0 <1 15 0.05 0.05 0.05 Jon Output 0/5 2.5 5 -2 - 16 }|-3.2 1.15 Drive HCG [O0/5| 46 5 [0.64 0.51| -1 0.36 Current Types | 0/10 9.5 10 |-16 -~13/-2.6 - 0.9 O/15| 13.5 15 |-42 -~3.4|- 6.8 - 2.4 0/5 2.5 5 |- 1.53 1.36] 3.2 ~1.1 mA HCF [0/5 46 5 |- 0.52 0.44) -1 I~ 0.36 Types | 0/10 9.5 10 |-1.3 -1.1)-2.6 - 0.9 0/15] 13.5 15 |-3.6 - 3.0/- 6.8 -24 a: input on terminals 1, 5, 8, 12 or 2, 6, 9, 13 ; other inputs to Vpp. b : input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13 ; other inputs to Vpp. * Tow = 55C for HCC device : -40C for HCF device. * Thigh = +125C for HCC device : +85C for HCF device. 3/8 Ay SiScnomones 451HCC/HCF4093B STATIC ELECTRICAL CHARACTERISTICS ( continued) Test Conditions Value Symbol Parameter Vv; Vo Ilo! | Voo TLow* 25C T High* Unit (Vv) (V) | (A) ] (Y) | in. | Max.| min. | Typ. | Max.| Min. | Max. lot Output 0/5 0.4 5 0.64 0.51 1 0.36 Sink 0/10] 0.5 10 | 16 13 | 26 0.9 Current 0/15 1.5 15 | 42 3.4 6.8 2.4 mA O75 0.4 5 | 0.52 0.44 1 0.36 0/10 0.5 10 13 1.4 2.6 0.9 0/15 1.5 15 | 3.6 3.0 6.8 24 Ids In | Input HCC Tons 18 + 0.1 +105|+04 +1 Leakage {Types HA Current [Hor Any Input 0/15 15 +03 + 105/4+ 03 +1 Types Cc, Input Capacitance Any Input 5 75 pF DYNAMIC ELECTRICAL CHARACTERISTICS (Tamp = 25C, C, = 50pF, Ry = 200kQ, typical temperature coefficient for all Vpp = 0.3%/C values , all input rise and fall time = 20ns) Test Conditions Value . Symbol Parameter - Unit Vopb (V)} Min. | Typ. | Max. tein, tepH_| Propagation Delay Time 5 190 380 10 90 180 ns 15 65 130 ttLH, trHL| Transition Time 5 100 200 10 50 100 ns 15 40 80 Figure1 : Hysteresis Definition, Characteristics and Test Setup. (a) Definition of Vp, Vn and Vu (b) Transfer characteristics of 1 of 4 gates $-185a/1 Yo a a Ww \p S. 15591 Vy = Vp-Vy 4/8 452 A9r BSamicmonesHCC/HCF4093B (c) Test setup Figure 2 : Input and Output Characteristics. onIveR QUTPUT CHARACTERISTIC a) AC oetsur Yp S-1550/1 We eee eee be qrcccee tosic 0 to wee / 3s Set Figure 3 : Typical Current and Voltage Transfer Characteristics. G-183611 Yo ayy . CURRENT Yoo PEAK Ww Yoo t 1 s i $ Yo4 1 * / Lo ALL OTHER & INPUTS TO Yoo o 2 4 6 6 w wz yy tv) Figure 4 618371 Yo (vy =-55C 125C 12 T 12 1% iy : Typical Voltage Transfer Characteristics as a 5-156205 Function of Temperature, and Test Circuit. Yoo Yoo I [= yp a oO , o4 1 o i L __7 ALL OTHER PACKAGE INPUTS TO Yoo $-156361 SGS-THOMSON 5/8 MICROELECTROMICS 453HCC/HCF4093B Figure 5 : Typical Output Low (sink) Current Char- acteristics. ToL 2 46 6 8 WW Yost) Figure 7 : Typical Output High (source) Current Characteristic. 0 toH (ma) 20 30 0 5 10 ~Vps () Figure 9 : Typical Propagation Delay Time vs. Supply Voltage. PLH tPHL (ns) 600 200 0 s 10 15 Vpg ) 6/8 ky SGS-THOMSON Figure 6 : Minimum Output Low (sink) Current Char- acteristics. tou T (ma) T, = 25C oF o 2 4 6 8 0 12 Vos () Figure 8 : Minimum Output High Current Charac- teristics. 0 Tou (ma) -15 or 0 $ 10 ~Yps () Figure 10 : Typical Transition Time vs. Load Capacitance. {TLH {THE (ns) 150 100 80 C, (pF} MICRORLECTROMICS 454Figure 11 : Typical Trigger Threshold Voltage vs.Vpp YpYy G- 18441 (vy 1s a 5 10 15 Yoo (V) Figure 13 : Typical Dissipation Characteristics. HCC/HCF4093B Figure 12 : Typical per cent Hysteresis vs. Supply Voltage. Ya Yoo Ct) 30 Qo 5 0 8 Yoo Figure 14 : Power Dissipation vs. Rise and Fall Times. 184641 G-1e471 Prot Sa = a Pott 4 tH +H + fawn Fy (Whe op SV. F=100kHz 2 7 TTT i 10%. 10 5 SSee f tee - ET = 2 T Fi TE HSV, RH 1 10, ks = 10, [4 ES 6E= i.e rae FG Corot ; Tfjoo = Tet wot 1 LIISY, tkHz aaa OA : i in i i j 10, 10, E=fibv, kHz 5 i 6 ott 10 TH TH f | ITT, rT CU = S0pF 5, ThHz 1 Ty i ' 1, cy = 15pr-| tf = = sa t F Tamb 225 * Cre Are + r jamb am ai : q cys isp) Pty 1 etl h Lt an anit 10! ; 7 068 2 46a 2 468 2 cea 2 ae Peed @ tbe 2 468 2 G8 2 ase 1 } 10 10? 10? f (kHz? 10 10" 10 10* 10 tpt, (8) ky SGS;THOMSON m8 MICROELECTRONICSHCC/HCF4093B APPLICATIONS Figure 15 : Wave Shaper. Figure 16 : Monostable Multivibrator. TO CONTROL SIGNAL OR Yq 1 Vgg - af - ME 2 Yas U6 HCC SCF 409368 FREQUENCY RANGE OF WAVE SHAPE IS FROM DC TO IMHz S 15654 TO CONTROL Yop SIGNAL OR Yop SL Ys we SL " ss, f Yoo | We HCC HCE ty FRC tn (ioe ) 40938 J sokn< RS IMA 173 HBC 7 HBF 1OOpF< C< 1pF 40074 GND FOR THE RANGE OF R AND C GIVEN 5ps<ty<ts 1M Me rey 9 -1566/1 Figure17 : Astable Multivibrator. TO CONTROL SIGNAL OR Yop 14 HCC/ HCP tae 2c) T 50kN< AS IMN ay 100pF $ CS 1pF FOR THE RANGE OF R AND C GIVEN 2ys < ty< 0.45 5 -1S6701 TEST CIRCUITS Figure18 : Quiescent Device Current. Figure 19 ; Input Leakage Current. Yoo Yoo INPUTS (od) Yss 5-1992/1 VoD L INPUTS 4 Yoo ~_ Q, ~_( } > <_] oO ss << NOTE: MEASURE INPUTS SEQUENTIALLY TO BOTH | 5199402 Yop AND Vss. CONNECT ALL UNUSED INPUTS TO ss EITHER Vpp OR Vss 8/8 ky SGS-THOMSON MICROELECTRONICS 456