
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/27/15
TVS Diode Arrays (SPA
® Diodes)
General Purpose ESD Protection - SM24CANB
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
PPk Peak Pulse Power (tp=8/20μs) 500 W
IPP Peak Pulse Current (tp=8/20μs) 10.0 A
TOP Operating Temperature -40 to 125 °C
TSTOR Storage Temperature -55 to 150 °C
Electrical Characteristics (TOP=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM IR≤1μA, Pin1 or Pin2 to Pin3 24.0 V
Reverse Breakdown Voltage VBR IT=1mA, Pin1 or Pin2 to Pin3 26.7 V
Leakage Current ILEAK VR=24V, Pin1 or Pin2 to Pin3 0.1 μA
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 34.0 V
IPP=8A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 46.0 V
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 50 V
Dynamic Resistance2RDYN TLP, tP=100ns, Pin 1 or Pin2 to Pin3 0.6 Ω
ESD Withstand Voltage1VESD
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance1CI/O-GND
Reverse Bias=0V, f=1MHz;
Pin 1 or Pin2 to Pin 3 30 pF
Thermal Information
Parameter Rating Units
Storage Temperature Range -55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
Note:
1 Parameter is guaranteed by design and/or device characterization.
2 Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns
0.0
10.0
20.0
30.0
40.0
50.0
024681012141618202224
Capacitance (pF)
Bias Voltage (V)
Capacitance vs. Reverse Bias
(Pin1 or Pin2 to Pin3)