2SK2569 Silicon N-Channel MOS FET November 1996 Application Low frequency power switching Features * * * * Low on-resistance. RDS(on) = 2.6 max. (at VGS = 4 V, ID = 100mA) 2.5V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2569 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 50 V Gate to source voltage VGSS 20 V Drain current ID 0.2 A 0.4 A 150 W Drain peak current ID(pulse)* 1 2 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1 % Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Symbol V(BR)DSS Min 50 Typ -- Max -- Unit V Test Conditions ID = 100 A, VGS = 0 V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 IDSS -- -- 1.0 A VDS = 40 V, VGS = 0 Gate to source leak current IGSS -- -- 2.0 A VGS = 16 V, VDS = 0 Gate to source cutoff voltage VGS(off) 0.5 -- 1.5 V ID = 10 A, VDS = 5 V -- 2.0 2.6 ID = -100 mA 1 VGS = -4 V* ID = 40 mA 1 VGS = -2.5 V* Static drain to source on state RDS(on)1 resistance Static drain to source on state RDS(on)2 resistance Foward transfer admittance |yfs| -- 3.1 5.0 0.13 0.23 -- S Input capacitance Ciss -- 14.0 -- pF Output capacitance Reverse transfer capacitance Turn-on delay time Coss Crss td(on) -- -- -- 17.2 1.73 40 -- -- -- pF pF Rise time tr -- 86 -- s Turn-off delay time td(off) -- 1120 -- s Fall time Notes 1. Pulse Test 2. Marking is "ZN-" tf -- 430 -- s 2 s ID = 100 mA VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 100 mA RL = 300 2SK2569 Maximum Channel Dissipation Curve Channel Dissipation Pch (mW) 200 150 100 50 0 50 100 Ambient Temperature 150 200 Ta (C) 3 2SK2569 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4