FEATURES
100Vbreakdown voltage
60 A current rating
0.01RDS(on)
150nC gate charge
-55oC to +125oC temperature range
Operational Environmen t radi ation testing to MIL-STD-
750
- Total-dose: 100 krads(Si)
- SEGR/SEB immune to Xe at full rated drain potential
Bare Die
- Prototype, EMs and Class S
Drop-in compatible with industry standards
Class S MOSFETs built to your custom flow
INTRODUCTION
Aeroflex RAD's new radiation toleran t power MOSFETs are
now available in die, seven standard package options and custom
packaging for HiRel environm ents. Applications within
military, aerospace, medical, nuclear power generation, high
energy physics research laboratories can benefit from the use of
this new series of MOSFETs. Aeroflex's Power MOSFETs are
radiation tolerant to 100 krad(Si) and SEGR/SEB immune to
their full rated breakdown potential.
Operational power losses are minimized by Aeroflex’s ideal
combination of low RDS(on) and gate charge. Die size is
optimized for maximum current rating while meeting industry
norms. These units are suitable for standalone and hybrid
applications.
The RAD7160-NCx Die are well suited for low loss switching
applications, such as DC-to-DC Converters and solid-state
relays. They are drop-in compatible with industry standards.
Standard Products
RAD7160-NCx Power MOSFET Die
Data Sheet
January, 2012
www.aeroflex.com/MOSFETS
ELECTRICAL CHARACTERISTICS (Case temperature (Tc) = 25oC unless otherwise specified)
CHARACTERISTICS TEST CONDITIONS LIMITS UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage BVdss Vgs - 0V, Id = 1mA 100 - - V
Gate-Threshold Voltage Vgs(th) Vds = Vgs, Id = 1.0mA 2.0 -4.0 V
Gate-Body Leakage Igss Vgs = +20V - - 100 nA
Zero-Gate Leakage
Drain Current Idss1
Idss2 Vds = 80V, Vgs = 0V
Vds = 80V, Vgs = 0V, Tc
125oC
-
--
-25
250 A
Drain-Source On Resistance Rds(on) Vgs = 12V, Id = 48A - - 0.01 ohms
Gate Charge at 12V Qg(12) Vgs = 12V Id = 60A
Vdd = 50V - - 150 nC
Diode Forward Voltage Vsd Id = 60A, Vgs = 0V 0.6 -1.2 V
Junction-to-Case Rjc NA/Die - - - oC/W