To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7
November 2015
FODM121 Series, FODM124, FODM2701,
FODM2705
4-Pin Full Pitch Mini-Flat Package Phototransistor
Optocouplers
Features
• More than 5 mm Creepage/Clearance
• Compact 4-Pin Surface Mount Package
(2.4 mm Maximum Standoff Height)
• Current T ransfer Ratio in Selected Groups:
• Safety and Regulatory Approvals:
– UL1577, 3,750 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 565 V Peak Working
Insulation Voltage
Applications
• Digital Logic Inputs
• Microprocessor Inputs
• Power Supply Monitor
• Twisted Pair Line Receiver
• Telephone Line Receiver
Description
The FODM121 series, FODM124, and FODM2701
consists of a gallium arsenide infrared emitting diode
driving a phototransistor in a compact 4-pin mini-flat
package. The lead pitch is 2.54 mm. The FODM2705
consists of two gallium arsenide in frared emitting diodes
connected in inverse parallel for AC operation.
Functional Block Diagram
DC Input:
FODM121: 50–600%
FODM121A: 100–300%
FODM121B: 50–150%
FODM121C: 100–200%
FODM124: 100% MIN
FODM2701: 50–300%
AC Input:
FODM2705: 50–300%
Figure 2. Package Outlines
1
2
4
3EMITTER
Equivalent Circuit
FODM121, FODM124, FODM2701
Equivalent Circuit
FODM2705
COLLECTORANODE
CATHODE
1
2
4
3EMITTER
COLLECTORANODE
CATHODE
Figure 1. Schematic
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 2
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only withi n the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV
< 300 VRMS I–III
Climatic Classification 40/110/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test wi th tm = 10 s, Partial Discharge < 5 pC 904 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak
VIORM Maximum Working Insulation Voltage 565 Vpeak
VIOTM Highest Allowable Over-Voltage 6000 Vpeak
External Creepage ≥ 5mm
External Clearance ≥ 5mm
DTI Distance Through Insulation (Insulation Thickness) ≥ 0.4 mm
TSCase Temperature(1) 150 °C
IS,INPUT Input Current(1) 200 mA
PS,OUTPUT Output Power(1) 300 mW
RIO Insulation Resistance at TS, VIO = 500 V(1) > 109Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 3
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exp osure to stresses above the reco mmended op erating conditions may affe ct device reliabil ity.
The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specifie d.
Symbol Parameter Value Unit
TOTAL PACKAGE
TSTG Storage Temperature -40 to +125 °C
TOPR Operating Temperature -40 to +110 °C
TJJunction Temperature -40 to +125 °C
TSOL Lead Solder Temperature 260 for 10 sec °C
EMITTER
IF (avg) Continuous Forward Current 50 mA
IF (pk) Peak Forward Current (1 µs pulse, 300 pps.) 1 A
VRReverse Voltage 6 V
PDPower Dissipation 70 mW
Derate linearly (Above 75°C) 1.41 mW/°C
DETECTOR
ICContinuous Collector Current 80 mA
VCEO Collector-Emitter Voltage FODM121 Series, FODM124 80 V
FODM2701, FODM2705 40
VECO Emitter-Collector Voltage 6 V
PDPower Dissipation 150 mW
Derate linearly (Above 80°C) 3.27 mW/°C
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 4
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Note:
2. Steady state isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are
common, and pins 3 and 4 are common.
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
INDIVIDUAL COMPONENT CHARACTERISTICS
Emitter
VFForward Voltage
FODM121 Series,
FODM124 IF = 10 mA 1.0 1.3 V
FODM2701 IF = 5 mA 1.4
FODM2705 IF = ±5 mA
IRReverse Current FODM121 Series,
FODM124,
FODM2701 VR = 5 V 5 µA
Detector
BVCEO Collector-Emitter
Breakdown Voltage
FODM121 Series,
FODM124 IC = 1 mA, IF = 0 80 V
FODM2701,
FODM2705 40
BVECO Emitter-Collector
Breakdown Voltage All IE = 100 µA, IF = 0 7 V
ICEO Collector Dark Current All VCE = 40 V, IF = 0 100 nA
CCE Capacitance All VCE = 0 V, f = 1 MHz 10 pF
TRANSFER CHARACTERISTICS
CTR DC Current Transfer
Ratio
FODM2701 IF = 5 mA, VCE = 5 V 50 300
%
FODM2705 IF = ±5 mA, VCE = 5 V 50 300
FODM121
IF = 5 mA, VCE = 5 V
50 600
FODM121A 100 300
FODM121B 50 150
FODM121C 100 200
FODM124 IF = 1 mA, VCE = 0.5 V 100 1200
IF = 0.5 mA, VCE = 1.5 V 50
CTR Symmetry FODM2705 IF = ±5 mA, VCE = 5 V 0.3 3.0
VCE(SAT) Saturation Voltage
FODM121 Series IF = 8 mA, IC = 2.4 mA 0.4
V
FODM124 IF = 1 mA, IC = 0.5 mA 0.4
FODM2701 IF = 10 mA, IC = 2 mA 0.3
FODM2705 IF = ±10 mA, IC = 2 mA 0.3
trRise Time
(Non-Saturated) All IC = 2 mA, VCE = 5 V,
RL = 100 Ω3µs
tfFall Time
(Non-Saturated) All IC = 2 mA, VCE = 5 V,
RL = 100 Ω3µs
ISOLATION CHARACTERISTICS
VISO Steady St ate Isolation
Voltage(2) All 1 minute 3750 VACRMS
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 5
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Typical Performance Curves
TA = 25°C unless otherwise specified.
Fig.
3
Forward Current vs. Forward Voltage
VF - Forward Voltage (V)
I
F
- Forward Current (mA)
V
CE(sat)
- Collector-Emitter Saturation Voltage(V)
CTR – Current Transfer Ratio (%)
0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
10
100
T
A
= 110
o
C
70
o
C
25
o
C0
o
C
-40
o
C
Fig. 4 Collector-Emitter Saturation Voltage vs.
Ambient Temperature (FODM121/2701/2705)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
I
F
= 10mA
I
C
= 2mA
I
F
= 8mA
I
C
= 2.4mA
Fig. 5 Current Transfer Ratio vs. Forward Current
(FODM121/2701/2705)
IF - Forward Current (mA)
0.1 1 10 100
10
100
TA = 25oC
VCE = 5V
VCE = 10V
Fig. 6 Collector Current vs. Forward Current
(FODM121/2701/2705)
I
F
- Forward Current (mA)
0.1 1 10 100
0.1
1
10
100
T
A
= 25
o
C
V
CE
= 5V
V
CE
= 10V
Fig. 7 Collector Current vs. Ambient Temperature
(FODM121/2701/2705)
T
A
- Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.01
0.1
1
10
100
VCE = 5V
IF = 0.5mA
IF = 1mA
IF = 5mA
IF = 10mA
IF = 25mA
Fig. 8 Collector Current vs. Collector-Emitter
Voltage (FODM121/2701/2705)
VCE - Collector-Emitter Voltage (V)
0246810
0
10
20
30
40
T
A
= 25oC
I
F
= 50mA
I
F
= 1mA
I
F
= 5mA
I
F
= 10mA
I
F
= 20mA
I
F
= 30mA
I
F
= 40mA
I
C
- Collector Current (mA)
I
C
- Collector Current (mA)
I
C
- Collector Current (mA)
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 6
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Typical Performance Curves (Continued)
TA = 25°C unless otherwise specified.
CTR – Current Transfer Ratio (%)
CTR – Normalized Current Transfer Ratio (%)
I
CEO
- Collector Dark Current (nA)Switching Time (μs)
Fig 9. Collector Dark Current vs. Ambient
Temperature (FODM121/2701/2705)
TA - Ambient Temperature (°C) TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.1
1
10
100
1000
10000
V
CE
= 40V
Fig. 10 Normalized Current Transfer Ratio vs.
Ambient Temperature (FODM121/2701/2705)
-40 -20 0 20 40 60 80 100 120
20
40
60
80
100
120
140
160
IF = 5mA
VCE = 5V
Normalized to TA = 25
o
C
Fig.
11
Switching Time vs. Load Resistance
(FODM121/2701/2705)
R
L
- Load Resistance (kΩ)
1 10 100
1
10
100
1000
VCC = 5V
TA = 25
oC
tOFF
tON
IF = 16mA
tS
IF = 5mA
Fig. 1
2
Collector-Emitter Saturation Voltage
vs. Ambient Temperature
(FODM124)
T
A
- Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
I
F
= 1mA
I
C
= 0.5mA
Fig. 13 Current Transfer Ratio vs.
Forward Current (FODM124)
I
F
- Forward Current (mA)
0.1 1 10
10
100
TA = 25°C
VCE = 0.5V
Fig 1
4
. Collector Current vs. Forward Current
(FODM124)
IF - Forward Current (mA)
0.1 1 10
0.01
0.1
1
10
T
A
= 25°C
V
CE
= 0.5V
V
CE(sat)
- Collector-Emitter Saturation Voltage(V)
I
C
- Collector Current (mA)
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 7
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Typical Performance Curves (Continued)
TA = 25°C unless otherwise specified.
CTR – Normalized Current Transfer Ratio (%)
Switching Time (μs)
I
C
- Collector Current (mA)
I
CEO
- Collector Dark Current (nA)
I
C
- Collector Current (mA)
Fig 1
5
. Collector Current vs. Ambient Temperature
(FODM124)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.1
1
10
VCE = 0.5V
IF = 0.5mA
IF = 1mA
IF = 5mA IF = 10mA
IF = 2mA
Fig. 16 Collector Current vs. Collector-Emitter Voltage
(FODM124)
V
CE
- Collector-Emitter Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0
0
2
4
6
8
10
TA = 25
o
C
IF = 0.5mA
IF = 1mA
IF = 5mA
IF = 10mA
IF = 2mA
Fig. 17 Collector Dark Current vs. Ambient
Temperature
(FODM124)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.1
1
10
100
1000
10000 VCE = 40V
Fig. 18 Normalized Current Transfer Ratio vs.
Ambient Temperature
(FODM124)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
20
40
60
80
100
120
140
160
I
F
= 1mA,
V
CE
= 0.5V
Normalized to T
A
= 25°C
Fig. 1
9
Switching Time vs. Load Resistance (FODM124)
RL - Load Resistance (kΩ)
1 10 100
1
10
100
1000
VCC = 5V
IF = 1mA
TA = 25°C
tOFF
tON
tS
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 8
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (tL to tP) 3°C/second max.
Liquidous T
emperature (TL) 217°C
Time (tL) Maintained Above (TL) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsmax
Tsmin
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 9
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Ordering Information
Note:
The product orderable part number system listed in this table also applies to the FODM121A, FODM121B,
FODM121C, FODM124, FODM2701, and FODM2705 products.
Marking Information
Figure 20. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
FODM121 Full Pitch Mini-Flat 4-Pin Tube (100 units)
FODM121R2 Full Pitch Mini-Flat 4-Pin Tape and Reel (2500 Units)
FODM121V Full Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units)
FODM121R2V Full Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appea rs on component ordered with this option)
4 One-Digit Year Code, e.g., “5”
5 Digit Work W eek, Ranging from “01” to “53”
6 Assembly Package Code
1
2
6
4
35
121
XV R
YY
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 10
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Carrier Tape Specifications
D
D
W
K
t
d
1
0PP
A
P
0
B0
0
2
E
F
W
1
0
Reel Diameter
Devices Per Reel
Max. Component Rotation or Tilt
Cover Tape Thickness
Cover Tape Width
Pocket Hole Dia.
Pocket Dimension
Pocket Location
Sprocket Hole Location
Sprocket Hole Dia.
Sprocket Hole Pitch
Tape Thickness
Pocket Pitch
Tape Width
Description Symbol Dimensions
2.54 Pitch
B
d
W1
D
K0
1
0
E
A
P
0
P
F
2
D
P
0
0
t
W
330 mm (13")
12.00±0.4
7.30±0.20
20° max
1.55±0.20
2.30±0.20
0.065±0.02
9.20
1.75±0.20
8.00±0.20
2.00±0.20
5.50±0.20
4.75±0.20
1.55±0.20
4.00±0.20
0.35±0.02
2500
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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