V
RRM
= 50 V - 200 V
I
F
= 70 A
Features
• High Surge Capability DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol MUR7005 (R) MUR7010 (R) Unit
Repetitive peak reverse
voltage V
RRM
50 100 V
RMS reverse voltage V
RMS
35 70 V
MUR7005 thru MUR7020R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions MUR7020 (R)
200
140
2. Reverse polarity (R): Stud is anode.
Silicon Super Fast
Recover
y
Diode
• Types from 50 V to 200 V V
RRM
DC blocking voltage V
DC
50 100 V
Continuous forward current I
F
70 70 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol MUR7005 (R) MUR7010 (R) Unit
Diode forward voltage 1 1
25 25 μA
33 mA
Recovery Time
Maximum reverse recovery
time T
RR
75 75 ns
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 125 °C
V
75
3
25
V
R
= 50 V, T
j
= 25 °C
I
F
= 70 A, T
j
= 25 °C
T
C
≤ 125 °C
Conditions
1000 1000
T
C
= 25 °C, t
p
= 8.3 ms
200
Reverse current I
R
V
F
MUR7020 (R)
-55 to 150
-55 to 150
1
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
70
1000
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MUR7005 thru MUR7020R
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MUR7005 thru MUR7020R
DO- 5 (DO-203AB)
J
K
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 1/4 –28 UNF
B 0.669 0.687 17.19 17.44
C ----- 0.794 ----- 20.16
D ----- 1.020 ----- 25.91
E 0.422 0.453 10.72 11.50
F 0.115 0.200 2.93 5.08
G ----- 0.460 ----- 11.68
J ----- 0.280 ----- 7.00
K 0.236 ----- 6.00 -----
M ----- 0.589 ----- 14.96
N ----- 0.063 ----- 1.60
P 0.140 0.175 3.56 4.45
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