AO3435 20V P-Channel MOSFET General Description Product Summary The AO3435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor applications. VDS = -20V ID = -3.5A RDS(ON) < 70m RDS(ON) < 90m RDS(ON) < 110m RDS(ON) < 130m (VGS = -4.5V) (VGS =- 4.5V) (VGS = -2.5V) (VGS = -1.8V) (VGS = -1.5V) SOT23 Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS Steady State -20 Gate-Source Voltage 8 VGS TA=25C Continuous Drain Current A TA=70C Pulsed Drain Current ID B Power Dissipation A -2.9 -2.7 -2.3 Junction and Storage Temperature Range Rev. 2.0 November 2013 1.4 1 0.9 0.6 TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A Steady-State Steady-State Maximum Junction-to-Lead C A -25 PD TA=70C V -3.5 IDM TA=25C Units V Symbol RJA RJL www.aosmd.com -55 to 150 Typ 70 100 63 W C Max 90 125 80 Units C/W C/W C/W Page 1 of 5 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 TJ=55C VGS=-4.5V, ID=-3.5A TJ=125C Static Drain-Source On-Resistance VGS=-2.5V, ID=-3.0A 56 70 80 100 70 90 A m m 110 m m 15 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Gate resistance V 130 VSD Rg nA -1 85 IS Reverse Transfer Capacitance 100 -0.65 100 VDS=-5V, ID=-3.5A Output Capacitance A -5 VGS=-1.5V, ID=-0.5A Forward Transconductance Coss Units VGS=-1.8V, ID=-2.0A gFS Crss Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ -0.7 510 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=-4.5V, VDS=-10V, ID=-3.5A -1 V -1.4 A 745 pF 70 pF 52 pF 18 23 5.6 11 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-3.5A, dI/dt=100A/s 17 Qrr Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/s 4 VGS=-4.5V, VDS=-10V, RL=3, RGEN=6 S 0.6 nC 1.8 nC 11 ns 10 ns 60 ns 30 ns 49 ns nC A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300s pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. 12 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev. 2.0 November 2013 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 VDS=-5V -3.0V -4.5V 20 -2.5V 15 -ID(A) -ID (A) 15 -2.0V 10 10 125C VGS=-1.5V 5 5 25C 0 0 0 1 2 3 4 5 0 -VDS (Volts) Figure 1: On-Region Characteristics 1.5 2 2.5 3 Normalized On On-Resistance 1.6 VGS=-1.5V 130 RDS(ON) (m ) 1 -VGS(Volts) Figure 2: Transfer Characteristics 150 VGS=-1.8V 110 90 VGS=-2.5V 70 VGS=-4.5V 50 VGS=-2.5V ID=-3A 1.4 VGS=-4.5V ID=-3.5A 1.2 VGS=-1.8V ID=-2.0A 1 VGS=-1.5V ID=-0.5A 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 180 1E+02 ID=-3.5A 160 1E+01 12 140 1E+00 120 -IS (A) RDS(ON) (m ) 0.5 100 125C 125C 1E-01 1E-02 25 80 1E-03 60 1E-04 25 40 0 2 4 6 8 1E-05 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev. 2.0 November 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1000 VDS=-10V ID=-3.5A 800 Capacitance (pF) -VGS (Volts) 4 3 2 600 400 1 200 0 0 0 1 2 3 4 5 Ciss 6 Coss Crss 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 100.00 -ID (Amps) 20 1000 TJ(Max)=150C TA=25C 10s 10.00 15 -VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited 100 100s Power (W) 1ms 1.00 10ms 0.1s 0.10 DC TJ(Max)=150C TA=25C 10 1s 1 0.01 0.1 1 10 100 0.1 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 Z JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Rev. 2.0 November 2013 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL V ds t o ff to n Vgs - DU T Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig Rev. 2.0 November 2013 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.aosmd.com Page 5 of 5