AO3435
20V P-Channel MOSFET
Product Summary
VDS = -20V
ID= -3.5A (VGS = -4.5V)
RDS(ON) < 70mΩ(VGS =- 4.5V)
RDS(ON) < 90mΩ (VGS = -2.5V)
RDS(ON) < 110mΩ (VGS = -1.8V)
RDS(ON) < 130mΩ(VGS = -1.5V)
General Description
The AO3435 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.5V. This
device is suitable for use in buck convertor
applications.
SOT23
Top View Bottom View
D
D
D
Symbol
10 Sec
Steady State
V
DS
V
GS
-3.5 -2.9
-2.7 -2.3
I
DM
1.4 1
0.9 0.6
T
J
, T
STG
Symbol
Typ
Max
t ≤ 10s 70 90
Steady-State 100 125
Steady-State R
θJL
63 80
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
VGate-Source Voltage
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Thermal Characteristics
-55 to 150
Units
-20
±8
-25
Maximum Junction-to-Ambient
A
°C/W
°C
T
A
=70°C
Continuous Drain
Current
A
T
A
=25°C
T
A
=70°C
R
θJA
Parameter
P
D
Drain-Source Voltage
I
D
°C/W
Parameter
W
Maximum Junction-to-Lead
C
°C/W
Units
Maximum Junction-to-Ambient
A
Junction and Storage Temperature Range
G
S
G
SG
S
Rev. 2.0 November 2013 www.aosmd.com Page 1 of 5
Symbol Min Typ Max Units
BV
DSS
-20 V
-1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
-0.5 -0.65 -1 V
I
D(ON)
-25 A
56 70
T
J
=125°C 80 100
70 90 mΩ
85 110 mΩ
100 130 mΩ
g
FS
15 S
V
SD
-0.7 -1 V
I
S
-1.4 A
C
iss
510 745 pF
C
oss
70 pF
C
rss
52 pF
R
g
18 23 Ω
Q
g
5.6 11 nC
Q
0.6 nC
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-10V, f=1MHz
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge V
GS
=-4.5V, V
DS
=-10V, I
D
=-3.5A
Gate Source Charge
mΩ
V
GS
=-2.5V, I
D
=-3.0A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3.5A
V
GS
=-1.5V, I
D
=-0.5A
V
GS
=-1.8V, I
D
=-2.0A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS
I
D
=-250µA
V
DS
=-20V, V
GS
=0V
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3.5A
Reverse Transfer Capacitance
Rev. 2.0 November 2013 www.aosmd.com Page 2 of 5
Q
0.6
nC
Q
gd
1.8 nC
t
D(on)
11 ns
t
r
10 ns
t
D(off)
60 ns
t
f
30 ns
t
rr
17 49 ns
Q
rr
4nC
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On DelayTime
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime V
GS
=-4.5V, V
DS
=-10V, R
L
=3Ω,
R
GEN
=6Ω
Turn-Off Fall Time
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3.5A
Gate Source Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-3.5A, dI/dt=100A/µs
I
F
=-3.5A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1 in2FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev. 2.0 November 2013 www.aosmd.com Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
012345
-ID(A)
-VDS (Volts)
Figure 1: On-Region Characteristics
VGS=-1.5V
-2.0V
-
2.5V
-4.5V
-
3.0V
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
V
DS
=
-
5V
50
70
90
110
130
150
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
VGS=-1.5V
0.8
1
1.2
1.4
1.6
Normalized On-Resistance
VGS=-2.5V
ID=-3A
VGS=-4.5V
ID=-3.5A
VGS=-1.8V
ID=-2.0A
VGS=-1.5V
ID=-0.5A
Rev. 2.0 November 2013 www.aosmd.com Page 3 of 5
12
50
70
0 2 4 6 8 10
-ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=-4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics
25
°
125
°
C
0.8 0 25 50 75 100 125 150 175
Normalized On
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=
-
1.5V
ID=-0.5A
40
60
80
100
120
140
160
180
02468
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
ID=-3.5A
25
°
125
°
C
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0123456
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
0 5 10 15 20
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
C
oss
C
rss
1
10
100
1000
Power (W)
VDS=-10V
ID=-3.5A
TJ(Max)=150°C
TA=25°C
0.01
0.10
1.00
10.00
100.00
-ID(Amps)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
1s
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12
0.1
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 0.1 1 10 100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
DC
TJ(Max)=150°C
TA=25°C
1s
Rev. 2.0 November 2013 www.aosmd.com Page 4 of 5
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
DUT Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
rr
Q = - Idt
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Ig
Vgs
-
+
VDC
L
Isd
Vds - dI/dt
RM
Vdd
Vdd
t
rr
-Isd
-Vds
F
-I
-I
Rev. 2.0 November 2013
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Page 5 of 5