TBD62304A series
2017-03-24
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©2017 Toshiba Corporation
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62304APG, TBD62304AFNG, TBD62304AFWG
7-ch low active sink type DMOS transistor array
TBD62304A series are DMOS transistor arrays with 7 circuits. Please be
careful about thermal conditions during use.
Features
• Built-in 7 circuits
• High voltage : VOUT = 50 V (max)
• High current : IOUT = 500 mA/ch (max)
• Input voltage (output on) : -20 V to VCC-3.5 V
• Input voltage (output off) : VCC-0.4 V to VCC
• Package : PG type DIP16-P-300-2.54A
FNG type SSOP16-P-225-0.65B
FWG type P-SOP16-0410-1.27-002
Pin Assignment (top view)
Pin connection may be omitted partially or simplified for explanatory purpose.
TBD62304APG
DIP16-P-300-2.54A
TBD62304AFNG
SSOP16-P-225-0.65B
TBD62304AFWG
P-SOP16-0410-1.27-002
Weight
DI
P16-P-300-2.54A :1.13 g (typ.)
SSOP16
-P-225-0.65B :0.07 g (typ.)
P-SOP16-0410-1.27-002 :0.15 g (typ.)
VCC
O6
O7
O5
O4
O3
O2
O1
GND
I6
I7
I5
I4
I3
I2
I1
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Pin Descriptions
Pin No. Pin name Function
1
I1
2
I2
3
I3
4
I4
5
I5
6
I6
7
I7
8
GND
9
VCC
10
O7
11
O6
12
O5
13
O4
14
O3
15
O2
16
O1
Basic Circuit
Basic circuit may be omitted partially or simplified for explanatory purpose.
INPUT
OUTPUT
VCC
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Power supply voltage VCC −0.5 to 6.0 V
Output voltage VOUT 50 V
Output current (per ch) IOUT 500 mA
Input voltage VIN −22 to VCC+0.5 (Note4) V
Power
dissipation
PG (Note1)
PD
1.47
W
FNG (Note2) 0.78
FWG (Note3) 1.25
Operating temperature Topr −40 to 85 °C
Storage temperature Tstg −55 to 150 °C
Note1: Standalone. When Ta exceeds 25 °C, it is necessary to do the derating with 11.8 mW/°C.
Note2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40 %, single-side glass epoxy). When Ta exceeds 25 °C, it is
necessary to do the derating with 6.24 mW/°C.
Note3: On PCB (compliant with JEDEC 2s2p). When Ta exceeds 25 °C, it is necessary to do the derating with 10
mW/°C.
Note4: Do not exceed 6 V
Operating Ranges (Ta = −40 to 85°C, unless otherwise specified.)
Characteristics Symbol Test conditions Min Typ. Max Unit
Power supply voltage VCC ― 4.5 5.0
5.5
V
Output voltage VOUT ― ― ―
50
V
Output current
(per ch)
PG (Note1)
IOUT
1 circuit ON, Ta = 25 °C 0 ― 400
mA
tpw = 25 ms
7 circuits ON
Ta = 85 °C
Tj = 120 °C
Duty = 10 % 0 ― 400
Duty = 50 % 0 ― 190
FNG (Note2)
1 circuit ON, Ta = 25 °C 0 ―
400
tpw = 25 ms
7 circuits ON
Ta = 85 °C
Tj = 120 °C
Duty = 10 % 0 ―
300
Duty = 50 % 0 ― 130
FWG (Note3)
1 circuit ON, Ta = 25 °C 0 ― 400
tpw = 25 ms
7 circuits ON
Ta = 85 °C
Tj = 120 °C
Duty = 10 % 0 ― 390
Duty = 50 % 0 ― 170
Input voltage (Output on) VIN (ON) IOUT = 100 mA or more, VOUT = 2 V -20 ― VCC-3.5 V
Input voltage (Output off) VIN (OFF) IOUT = 100 μA or less, VOUT = 2 V VCC-0.4 ― VCC V
Note1: Stand alone
Note2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40 %, single-side glass epoxy).
Note3: On PCB (compliant with JEDEC 2s2p)
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Electrical Characteristics (Ta = 25°C, unless otherwise specified.)
Characteristics Symbol Test
Circuit
Test conditions Min Typ. Max Unit
Output leakage current Ileak 1 VOUT = 50 V, Ta = 85 °C
VIN = VCC = 5.5 V ― ― 1.0 μA
Output voltage
(Output ON-resistance)
VDS
(RON) 2
IOUT = 350 mA
VCC = 5.0 V, VIN = 0 V ― 0.525
(1.5)
1.14
(3.25)
V
(Ω)
IOUT = 200 mA,
VCC = 5.0 V, VIN = 0 V ― 0.3
(1.5)
0.65
(3.25)
IOUT = 100 mA
VCC = 5.0 V, VIN = 0 V ― 0.15
(1.5)
0.325
(3.25)
Input current IIN(ON) 3 VCC = 5.5 V, VIN = 0 V ― -10 -100 μA
VCC = 5.5 V, VIN = -20 V ― -100 -200
IIN(OFF) 4 VCC = VIN = 5.5 V ― ― 1.0 μA
Consumption current (per ch) ICC(ON) 3 VCC = 5.5 V, VIN = 0 V ― 70 200 μA
ICC(OFF) 4 VCC = 5.5 V, VIN = VCC ― ― 1.0 μA
Turn-on delay tON
5
VCC = 5.0 V, VOUT = 50 V
RL = 125 Ω
CL = 15 pF
― 0.6 ―
μs
Turn-off delay tOFF ― 0.6 ―
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Test Circuit
1. Ileak 2. VDS (RON)
3. IIN (ON), ICC (ON) 4. IIN (OFF), ICC (OFF)
Test circuits may be omitted partially or simplified for explanatory purpose.
OUTPUT
INPUT
GND
VOUT
IOUT
VDS
RON = VDS / IOUT
Ileak
VCC
VIN
VCC
OUTPUT
INPUT
GND
VCC
VIN
VCC
OUTPUT
INPUT
GND
VCC
VIN
VCC
ICC(ON)
IIN(ON)
OUTPUT
INPUT
GND
VCC
VIN
VCC
ICC(OFF)
IIN(OFF)
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5. tON, tOFF
Note1: Pulse width 50 μs, Duty cycle 10 %
Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns, VIH = 5.0 V
Note2: CL includes capacitance of the probe and the test board.
Test circuits and timing charts may be omitted partially or simplified for explanatory purpose.
Precautions for Using
This IC does not incorporate built-in protection circuits for excess current or over voltage.
Therefore, if the short-circuit between adjacent pins or between outputs, the short-to-power or ground fault has occurred,
the current or voltage beyond the absolute maximum rating is impressed, and IC may be destroyed. When designing,
please consider enough in power supply line, output line, and GND line.
In addition, so as not to continue to flow a current that exceeds the absolute maximum rating of the IC, please insert the
appropriate fuse in the power supply line.
t
r
tf
(Note 2)
(Note 1)
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Package Dimensions
DIP16-P-300-2.54A Unit: mm
Weight: 1.13 g (typ.)
SSOP16-P-225-0.65B Unit: mm
Weight: 0.07 g (typ.)
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P-SOP16-0410-1.27-002 Unit: mm
Weight: 0.15 g (typ.)
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Notes on Contents
1. Pin Connection
Pin connection may be simplified for explanatory purpose.
2. Equivalent Circuit
Equivalent circuit may be simplified for explanatory purpose.
3. Test Circuit
Test circuit may be simplified for explanatory purpose.
4. Timing Chart
Timing charts may be simplified for explanatory purposes.
IC Usage Considerations
Notes on handling of ICs
(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a
moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, damage or
deterioration, and may result in injury by explosion or combustion.
(2) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of
power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute
maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result
in injury by explosion or combustion. In addition, do not use any device inserted in the wrong orientation or incorrectly
to which current is applied even just once.
(3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of
overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or
load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the
effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time
and insertion circuit location, are required.
(4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the
negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or
ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the
protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
(5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such
as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as from input
or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a
speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may
cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL)
connection-type IC that inputs output DC voltage to a speaker directly.
Points to remember on handling of ICs
Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is
appropriately radiated, in order not to exceed the specified junction temperature (Tj) at any time or under any condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life,
deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the
effect of IC heat radiation with peripheral components.
Back-EMF
When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply
owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power
supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take
the effect of back-EMF into consideration in system design.
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RESTRICTIONS ON PRODUCT USE
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