MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 35 to 45 VOLTS 3 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B1035, B1045 1, 4 4 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1035 MBR1045 VRRM VRWM VR Average Rectified Forward Current (Rated VR, TC = 135C) IF(AV) 10 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 135C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) See Figure 12. IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C Voltage Rate of Change (Rated VR) Value Unit V 1 35 45 3 TO-220AC CASE 221B PLASTIC MARKING DIAGRAM B10x5 dv/dt B10x5 = Device Code x = 3 or 4 V/s 10,000 ORDERING INFORMATION Device Package Shipping MBR1035 TO-220 50 Units/Rail MBR1045 TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 3 1 Publication Order Number: MBR1035/D MBR1035, MBR1045 THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Case Symbol Value Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 10 Amps, TC = 125C) (iF = 20 Amps, TC = 125C) (iF = 20 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.57 0.72 0.84 mA 15 0.1 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 100 100 TJ = 150C 70 100C 30 30 20 20 10 7.0 5.0 3.0 2.0 1.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.2 0.4 0.6 0.8 1.0 0.1 1.4 1.2 25C 100C 50 25C iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 50 0.1 TJ = 150C 70 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 2 1.4 100C 1.0 75C 0.1 25C 0.01 0 10 5.0 15 20 25 30 35 40 45 50 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 Figure 4. Maximum Surge Capability RATED VOLTAGE APPLIED I I PK (RESISTIVELOAD) AV I PK 5 10 (CAPACITIVELOAD) I SQUARE WAVE AV 10 5.0 20 120 110 dc 130 140 150 160 16 RATED VOLTAGE APPLIED 14 I 12 I 10 PK (RESISTIVELOAD) AV SQUARE WAVE 8.0 6.0 dc 4.0 I (CAPACITIVELOAD) PK 20, 10, 5 I 2.0 0 70 100 AV 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RJA = 16C/W 10 9.0 SINE WAVE RESISTIVE LOAD 8.0 dc SQUARE WAVE I 7.0 (CAPACITIVELOAD) PK 5 I 6.0 AV 10 5.0 20 4.0 3.0 TJ = 150C 2.0 0 70 Figure 3. Maximum Reverse Current 15 1.0 0 100 NUMBER OF CYCLES AT 60 Hz 20 0 200 VR, REVERSE VOLTAGE (VOLTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 125C 10 0.001 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) TJ = 150C IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IR , REVERSE CURRENT (mA) 100 IFSM , PEAK HALF-WAVE CURRENT (AMPS) MBR1035, MBR1045 2.0 4.0 6.0 8.0 10 12 14 16 5.0 RATED VOLTAGE APPLIED RJA = 60C/W 4.0 I I 3.0 PK (RESISTIVELOAD) AV SQUARE WAVE 2.0 dc 1.0 0 I (CAPACITIVELOAD) PK 20, 10, 5 I AV 0 20 40 60 80 100 120 140 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TA, AMBIENT TEMPERATURE (C) Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air http://onsemi.com 3 160 160 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBR1035, MBR1045 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 Ppk TIME t1 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. TJL = Ppk * RJL [D + (1 - D) * r(t1 + tp) + r(tp) - r(t1)] where: TJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.03 0.02 0.01 Ppk tp 0.01 0.1 1.0 10 t, TIME (ms) 100 1000 Figure 9. Thermal Response 1500 HIGH FREQUENCY OPERATION Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10. ) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. C, CAPACITANCE (pF) 1000 700 500 MAXIMUM 300 TYPICAL 200 150 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 10. Capacitance http://onsemi.com 4 20 50 MBR1035, MBR1045 SCHOTTKY CHIP View A-A ALUMINUM CONTACT METAL SCHOTTKY CHIP (See View A-A) PLATINUM BARRIER METAL ANODE 1 ALUMINUM WIRE GUARDRING Motorola builds quality and reliability into its Schottky Rectifiers. First is the chip, which has an interface metal between the barrier metal and aluminum-contact metal to eliminate any possible interaction between the two. The indicated guardring prevents dv/dt problems, so snubbers are not mandatory. The guardring also operates like a zener to absorb over-voltage transients. Second is the package. The Schottky chip is bonded to the copper heat sink using a specially formulated solder. This gives the unit the capability of passing 10,000 operating thermal-fatigue cycles having a TJ of 100C. The epoxy molding compound is rated per UL 94, V0 @ 1/8. Wire bonds are 100% tested in assembly as they are made. Third is the electrical testing, which includes 100% dv/dt at 1600 V/s and reverse avalanche as part of device characterization. CATHODE SOLDER DIPPED COPPER LEADS 4 COPPER OXIDE PASSIVATION 3 UL RATED EPOXY Figure 11. Schottky Rectifier +150 V, 10 mAdc VCC 12 V 100 2.0 k 12 Vdc + 2N2222 D.U.T. 2.0 s 1.0 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 100 CARBON 2N6277 1.0 CARBON 1N5817 Figure 12. Test Circuit for dv/dt and Reverse Surge Current http://onsemi.com 5 4.0 F MBR1035, MBR1045 PACKAGE DIMENSIONS TO-220 PLASTIC CASE 221B-04 ISSUE D C B Q F T S DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. J http://onsemi.com 6 INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.190 0.210 0.110 0.130 0.018 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 3.73 4.83 5.33 2.79 3.30 0.46 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 MBR1035, MBR1045 Notes http://onsemi.com 7 MBR1035, MBR1045 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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