1MBH50-060,1MBH50D-060, Molded IGBT 600V / 50A Molded Package Features * Small molded package * Low power loss * Soft switching with low switching surge and noise * High reliability, high ruggedness (RBSOA, SCSOA etc.) * Comprehensive line-up Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply Equivalent Circuit Schematic Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) 1MBH50-060 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque IGBT Symbol VCES VGES IC25 IC100 Icp PC Tj Tstg - Rating 600 20 82 50 328 310 +150 -40 to +150 70 Unit V V A A A W C C N*cm Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg - Rating 600 20 82 50 328 310 140 +150 -40 to +150 70 Unit V V A A A W W C C N*cm C:Collector G:Gate E:Emitter 1MBH50D-060 / IGBT+FWD Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque http://store.iiic.cc/ IGBT + FWD C:Collector G:Gate E:Emitter Molded IGBT 1MBH50-060, 1MBH50D-060 Electrical characteristics (at Tj=25C unless otherwise specified) 1MBH50-060 / IGBT Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Turn-off time - - 5.5 - - - - - - - - - - - - 3000 650 150 - - - - Conditions Unit VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, IC=50A VGE=0V VCE=10V f=1MHz VCC=300V, IC=50A VGE=15V RG=62 ohm (Half Bridge) mA A V V pF Conditions Unit VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, IC=50A VGE=0V V CE=10V f=1MHz VCC=300V, IC=50A VGE=15V RG=62 ohm (Half Bridge) IF=50A, VGE=0V IF=50A, VGE=-10V, di/dt=100A/s mA A V V pF Max. 1.0 20 8.5 3.0 - - - 1.2 0.6 1.0 0.35 s 1MBH50D-060 / IGBT+FWD Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES IGES - - 5.5 - - - - - - - - - - VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Turn-off time FWD forward on voltage Reverse recovery time - - - - 3000 650 150 - - - - - - Max. 1.0 20 8.5 3.0 - - - 1.2 0.6 1.0 0.35 3.0 0.3 s V s Thermal resistance characteristics 1MBH50-060 / IGBT Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. - - Conditions Unit Max. 0.40 IGBT C/W 1MBH50D-060 / IGBT+FWD Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. - - - - Conditions Unit Max. 0.40 0.89 Outline drawings, mm 1MBH50-060, 1MBH50D-060 TO-3PL http://store.iiic.cc/ IGBT FWD C/W C/W 1MBH50-060, 1MBH50D-060 Molded IGBT Characteristics 1MBH50-060,1MBH50D-060 Collector current vs. Collector-Emitter voltage Tj=125C 100 100 80 80 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25C 60 40 20 60 40 20 0 0 0 1 2 3 4 5 0 Collector-Emitter voltage : VCE [V] 2 4 5 Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 Collector-Emitter voltage : VCE [V] 10 8 6 4 2 0 8 6 4 2 0 0 5 10 15 20 0 5 Gate-Emitter voltage : VGE [V] 10 15 20 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=62 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=300V, RG=62 ohm, VGE=15V, Tj=125C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 3 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter voltage : VCE [V] 1 100 100 10 10 0 20 40 60 80 0 20 40 Collector current : Ic [A] Collector current : Ic [A] http://store.iiic.cc/ 60 80 IGBT Module 1MBH50-060, 1MBH50D-060 Characteristics 1MBH50-060,1MBH50D-060 Switching time vs. RG Vcc=300V, Ic=50A, VGE=15V, Tj=125C Switching time : ton, tr, toff, tf [n sec.] 1000 100 1000 100 10 10 0 50 100 150 200 250 0 50 100 Dynamic input characteristics 300 15 200 10 100 5 0 100 150 200 Capacitance : Cies, Coes, Cres [nF] 20 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] 400 50 100 10 0 250 1000 0 Gate charge : Qg [nC] 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 Typical short circuit capability Vcc=400V, RG=62 ohm, Tj=125C Reversed biased safe operating area < > 62 ohm +VGE=15V, -VGE = 15V, Tj < = 125C, RG = 120 600 60 100 500 50 400 40 300 30 200 20 100 10 Short circuit time current : Isc [A] Collector current : Ic [A] 250 Tj=25C 25 0 200 Capacitance vs. Collector-Emitter voltage Tj=25C 500 150 Gate resistance : RG [ohm] Gate resistance : RG [ohm] 80 60 40 20 0 0 0 100 200 300 400 500 600 700 0 5 Collector-Emitter voltage : VCE [V] http://store.iiic.cc/ 10 15 Gate voltage : VGE [V] 20 25 Short circuit time : tsc [s] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. RG Vcc=300V, Ic=50A, VGE=15V, Tj=25C 1MBH50-060, 1MBH50D-060 IGBT Module Characteristics 1MBH50-060,1MBH50D-060 Thermal resistance : Rth (j-c) [C/W] Transient thermal resistance 101 100 10-1 10-2 10-4 10-3 10-2 10-1 100 Pulse width : PW [sec.] 1MBH50D-060 Reverse recovery time vs. Forward current Reverse recovery current vs. Forward current -di/dt=150A / sec -di/dt=150A / sec 400 15 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] 300 200 100 0 10 5 0 0 20 40 60 0 80 20 Forward current : IF [A] 40 60 80 Forward current : IF [A] Reverse recovery time characteristics vs. -di/dt IF=50A, Tj=125C Forward current vs. Foeward voltage 500 25 400 20 300 15 200 10 100 5 100 Forward current : IF [A] 60 40 20 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0 Forward voltage : VF [V] 100 200 300 -di/dt http://store.iiic.cc/ [ A / sec ] 400 500 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] 80