NTD5C688NL MOSFET - Power, Single, N-Channel 60 V, 27.4 mW, 17 A Features * Low RDS(on) to Minimize Conduction Losses * Low QG and Capacitance to Minimize Driver Losses * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Value Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGS "20 V ID 17 A Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2 & 3) TC = 25C Steady State TC = 100C TC = 25C Pulsed Drain Current PD TC = 100C TA = 25C Power Dissipation RqJA (Notes 1 & 2) 12 Steady State 9.1 ID TA = 100C TA = 25C Operating Junction and Storage Temperature A 7.5 PD 1.7 IDM A C IS 20 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 1 A) EAS 48 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction-to-Case (Drain) (Note 1) RqJC 8.3 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 44 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 17 A D G S N-CHANNEL MOSFET 4 1 2 77 -55 to 175 Parameter 40 mW @ 4.5 V W 3.4 TJ, Tstg Source Current (Body Diode) 27.4 mW @ 10 V 5.3 TA = 100C TA = 25C, tp = 10 ms W 18 ID 3 DPAK CASE 369C STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain AYWW 5C 688LG Continuous Drain Current RqJC (Notes 1 & 3) RDS(on) V(BR)DSS 60 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter www.onsemi.com 2 1 Drain 3 Gate Source A = Assembly Location Y = Year WW = Work Week 5C688L = Device Code G = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2016 May, 2019 - Rev. 2 1 Publication Order Number: NTD5C688NL/D NTD5C688NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 27 VGS = 0 V, VDS = 60 V mV/C TJ = 25C 10 TJ = 125C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 15 mA mA 100 nA 2.1 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 1.2 4.4 mV/C mW VGS = 10 V, ID = 10 A 22.8 27.4 VGS = 4.5 V, ID = 10 A 32 40 VDS = 55 V, ID = 10 A 20 S 400 pF CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Threshold Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 25 V VDS = 30 V, ID = 10 A 170 12 VGS = 4.5 V 3.4 VGS = 10 V 7.0 QG(TH) nC nC 0.9 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Plateau Voltage VGP 2.9 V td(on) 8 ns VGS = 4.5 V, VDS = 30 V, ID = 10 A 1.5 1.1 SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDS = 30 V, ID = 10 A, RG = 2.5 W tf 42 11 24 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 10 A TJ = 25C 0.9 TJ = 125C 0.8 tRR 17 Charge Time ta 8 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR www.onsemi.com 2 V ns 9 10 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTD5C688NL TYPICAL CHARACTERISTICS 40 40 ID, DRAIN CURRENT (A) 30 25 3.6 V 20 3.4 V 15 3.2 V 10 0 3.0 V 2.8 V 2.6 V . 5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 35 VGS = 5 V to 10 V 2.4 V 0 0.5 1.0 1.5 20 15 TJ = 25C 10 5 0 TJ = 125C 0 4 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics TJ = 25C ID = 10 A 40 35 30 25 20 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 5 50 TJ = 25C 45 40 35 VGS = 4.5 V 30 VGS = 10 V 25 20 15 10 5 6 7 8 9 10 11 12 13 14 15 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 2.0 10000 TJ = 150C VGS = 10 V ID = 10 A 1000 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE TJ = -55C 3 2 VGS, GATE-TO-SOURCE VOLTAGE (V) 45 1.8 1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 50 3 25 2.5 2.0 VDS = 5 V 30 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 35 1.6 1.4 1.2 1.0 TJ = 125C 100 TJ = 85C 10 1 TJ = 25C 0.1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 0.01 5 10 15 20 25 30 35 40 45 50 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 55 NTD5C688NL TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 1000 C, CAPACITANCE (pF) CISS 100 COSS CRSS 10 VGS = 0 V TJ = 25C f = 1 MHz 1 0 10 20 30 40 60 50 6 5 4 QGS QGD 3 VDS = 30 V TJ = 25C ID = 10 A 2 1 0 0 2 1 4 3 5 6 7 8 10 9 Figure 8. Gate-to-Source vs. Total Charge 10 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) 7 Figure 7. Capacitance Variation tf td(off) 10 td(on) VGS = 4.5 V VDS = 30 V ID = 10 A 1 10 1 0.1 100 TJ = 125C 0.3 0.4 TJ = 25C 0.5 0.6 TJ = -55C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 1000 TC = 25C VGS 10 V Single Pulse 100 TJ (initial) = 25C IPEAK, (A) ID, DRAIN CURRENT (A) 8 QG, TOTAL GATE CHARGE (nC) tr 10 1 0.1 9 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 100 1 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 TJ (initial) = 100C 1 10 ms 0.5 ms 1 ms 10 ms 100 0.1 1000 0.00001 0.0001 0.001 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTD5C688NL TYPICAL CHARACTERISTICS 10 50% Duty Cycle R(t) (C/W) 1 0.1 20% 10% 5% 2% 1% Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 PULSE TIME (sec) Figure 13. Thermal Response ORDERING INFORMATION Order Number NTD5C688NLT4G Package Shipping DPAK (Pb-Free) 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5