© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 2
1Publication Order Number:
NTD5C688NL/D
NTD5C688NL
MOSFET – Power, Single,
N-Channel
60 V, 27.4 mW, 17 A
Features
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS "20 V
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Steady
State
TC = 25°CID17 A
TC = 100°C 12
Power Dissipation RqJC
(Note 1)
TC = 25°CPD18 W
TC = 100°C 9.1
Continuous Drain
Current RqJA
(Notes 1, 2 & 3) Steady
State
TA = 25°CID7.5 A
TA = 100°C 5.3
Power Dissipation RqJA
(Notes 1 & 2)
TA = 25°CPD3.4 W
TA = 100°C 1.7
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 77 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
175
°C
Source Current (Body Diode) IS20 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 1 A)
EAS 48 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) (Note 1) RqJC 8.3 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 44
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
60 V 27.4 mW @ 10 V
RDS(on)
17 A
ID
V(BR)DSS
40 mW @ 4.5 V
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12
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
Gate
2
Drain 3
Source
4
Drain
AYWW
5C
688LG
A = Assembly Location
Y = Year
WW = Work Week
5C688L = Device Code
G = Pb−Free Package
G
S
N−CHANNEL MOSFET
D
NTD5C688NL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ27 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C 10 mA
TJ = 125°C 250
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 15 mA1.2 2.1 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ4.4 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 10 A 22.8 27.4 mW
VGS = 4.5 V, ID = 10 A 32 40
Forward Transconductance gFS VDS = 55 V, ID = 10 A 20 S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
400 pF
Output Capacitance Coss 170
Reverse Transfer Capacitance Crss 12
Total Gate Charge QG(TOT) VDS = 30 V,
ID = 10 A
VGS = 4.5 V 3.4 nC
VGS = 10 V 7.0
Threshold Gate Charge QG(TH)
VGS = 4.5 V, VDS = 30 V,
ID = 10 A
0.9 nC
Gate−to−Source Charge QGS 1.5
Gate−to−Drain Charge QGD 1.1
Plateau Voltage VGP 2.9 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(on)
VGS = 4.5 V, VDS = 30 V,
ID = 10 A, RG = 2.5 W
8ns
Rise Time tr42
Turn−Off Delay Time td(off) 11
Fall Time tf24
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A
TJ = 25°C 0.9 1.2 V
TJ = 125°C 0.8
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 10 A
17 ns
Charge Time ta 8
Discharge Time tb 9
Reverse Recovery Charge QRR 10 nC
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTD5C688NL
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3
TYPICAL CHARACTERISTICS
..
0
5
10
20
30
40
01 3 45
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IDSS, LEAKAGE (nA)
2.6 V
3.0 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ = 25°C
ID = 10 A
TJ = 25°C
VGS = 10 V
VGS = 10 V
ID = 10 A
TJ = 125°C
TJ = 85°C
3.4 V
VDS = 5 V
TJ = 150°C
VGS = 5 V to 10 V
2.8 V
3.2 V
0
10
15
25
35
40
0 0.5 1.0 1.5 2.0
3.6 V
20
30
35
45
50
34 5 6 7 8 910
50
5 6 10 11 15
40
25
20
15
10
8
0.6
0.8
1.0
1.4
1.6
1.8
2.0
−50 −25 0 25 50 75 100 125 150 175
0.01
100
1000
10000
5101520
30
45
1.2
30 35
TJ = 25°C
10
1
0.1
2.5
2.4 V
25
40
7 9 12 13
35
25 55
2
15
25
35
VGS = 4.5 V
14
40 45 50
30
20
5
NTD5C688NL
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
IPEAK, (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
VDS = 30 V
TJ = 25°C
ID = 10 A
QGS QGD
VGS = 4.5 V
VDS = 30 V
ID = 10 A
td(off)
td(on)
tf
tr
TJ = 125°C TJ = 25°C TJ = −55°C
TJ (initial) = 100°C
TJ (initial) = 25°C
RDS(on) Limit
Thermal Limit
Package Limit 1 ms
10 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
10
100
1000
01020
0
2
4
6
8
10
01 3 5
1
10
100
1 10 100
0.1
10
0.3 0.4 0.5 0.6 1.0
1000
1 10 1000.1
100
10
1
0.1 0.1
1
10
0.00001 0.001 0.010.0001
30 60 7 10
0.7 0.8 0.9
1000
10 ms
0.5 ms
VGS = 0 V
48
1
3
5
7
9
1
40 50 2 6 9
NTD5C688NL
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5
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10000
Figure 13. Thermal Response
PULSE TIME (sec)
R(t) (°C/W)
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
1000
ORDERING INFORMATION
Order Number Package Shipping†
NTD5C688NLT4G DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
