BD433/5/7
BD434/6/8
COMPLEMENTARY SILICON POWER TR ANSISTORS
■STMicr o electronics PREF E RRED
SALESTYPE
■COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output st ages.
The complementary PNP types are BD434,
BD436, and BD438 respectiv ely.
®
INT E R NAL SCH E M ATI C DIAG RA M
February 2003
321
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD433 BD435 BD437
PNP BD434 BD436 BD438
VCBO Collector-Base Voltag e (IE = 0) 22 32 45 V
VCES Collector-Emitter Voltage (VBE = 0) 22 32 45 V
VCEO Collector-Emitter Voltage (IB = 0) 22 32 45 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 4 A
ICM Collector Peak Current (t ≤ 1 0 ms) 7A
I
B
Base Current 1 A
Ptot Total Dissipation at Tc ≤ 25 oC36 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PN P types voltage and current values are negative.
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 3.5
100
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) for BD433/434 VCB = 22 V
for BD435/436 VCB = 32 V
for BD437/438 VCB = 45 V
100
100
100
µA
µA
µA
ICES Collector Cut-off
Current (VBE = 0) for BD433/434 VCE = 22 V
for BD435/436 VCE = 32 V
for BD437/438 VCE = 45 V
100
100
100
µA
µA
µA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA for BD433/434
for BD435/436
for BD437/438
22
32
45
V
V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 2 A IB = 0.2 A
for BD433/434
for BD435/436
for BD437/438
0.2
0.2
0.2
0.5
0.5
0.6
V
V
V
VBE∗Base-Emitter Voltage IC = 10 mA VCE = 5 V
IC = 2 A VCE = 1 V
for BD433/434
for BD435/436
for BD437/438
0.58
1.1
1.1
1.2
V
V
V
V
hFE∗DC Current Ga in IC = 10 mA VCE = 5 V
for BD433/434
for BD435/436
for BD437/438
IC = 500 mA VCE = 1 V
IC = 2 A VCE = 1 V
for BD433/434
for BD435/436
for BD437/438
40
40
30
85
50
50
40
130
130
130
140
hFE1/hFE2∗Matched Pair IC = 500 mA VCE = 1 V 1.4
fTTransition frequency IC = 250 mA VCE = 1 V 3 MHz
∗ P ulsed: P ulse duratio n = 300 µs, duty cycle 1.5 %
BD433 BD434 BD4 35 BD436 BD43 7 BD438
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425
b 0.7 0.9 0.028 0.035
b1 0.40 0.65 0.015 0.025
C 2.4 2.7 0.094 0.106
c1 1.0 1.3 0.039 0.051
D 15.4 16.0 0.606 0.630
e 2.2 0.087
e3 4.4 0.173
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
I 1.27 0.05
O 0.3 0.011
V10
o
10
o
0016114/B
SOT- 32 ( T O-126) MEC HA NI CAL DATA
1: Base
2: Collector
3: Emi tter
BD433 BD434 BD435 BD436 BD 437 BD438
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BD433 BD434 BD4 35 BD436 BD43 7 BD438
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