LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon MMBTA42LT1 MMBTA43LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol 1 Value MMBTA42 MMBTA43 Unit 2 Collector-Emitter Voltage V CEO 300 200 Vdc CASE 318-08, STYLE 6 Collector-Base Voltage V CBO 300 200 Vdc SOT-23 (TO-236AB) Emitter-Base Voltage V EBO 6.0 6.0 Vdc Collector Current -- Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C R JA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C R JA T J , T stg DEVICE MARKING MMBTA42LT1 = 1D; MMBTA43LT1 = M1E ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max 300 200 -- -- MMBTA42 300 -- MMBTA43 200 -- 6.0 -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) Emitter-Base Breakdown Voltage (I C= 100 Adc, I E= 0) V V Emitter-Base Breakdown Voltage V (I E= 100 Adc, I C= 0) Collector Cutoff Current Vdc (BR)CEO MMBTA42 MMBTA43 Vdc (BR)CBO (BR)EBO Adc I CBO ( V CB= 200Vdc, I E= 0) MMBTA42 -- 0.1 ( V CB= 160Vdc, I E= 0) MMBTA43 -- 0.1 Emitter Cutoff Current Vdc Adc I EBO ( V EB= 6.0Vdc, I C= 0) MMBTA42 -- 0.1 ( V EB= 4.0Vdc, I C= 0) MMBTA43 -- 0.1 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. M28-1/3 LESHAN RADIO COMPANY, LTD. MMBTA42LT1 MMBTA43LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 25 40 40 40 -- -- -- -- -- -- 0.5 0.5 -- 0.9 Unit ON CHARACTERISTICS (3) DC Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 30 mAdc, V CE = 10 Vdc) Collector-Emitter Saturation Voltage (I C = 20 mAdc, I B = 2.0 mAdc) hFE Both Types Both Types MMBTA42 MMBTA43 -- VCE(sat) MMBTA42 MMBTA43 Base-Emitter Saturation Voltage (I C = 20 mAdc, I B= 2.0 mAdc) V Vdc Vdc BE(sat) SMALL-SIGNAL CHARACTERISTICS Current -Gain-Bandwidth Product (V CE = 20 Vdc, I C = 10mA, f = 100 MHz) Collector - Base Capacitance (V CB= 20 Vdc, I E= 0, f = 1.0 MHz) fT 50 -- -- -- 3.0 4.0 C cb MMBTA42 MMBTA43 MHz pF 3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. M28-2/3 LESHAN RADIO COMPANY, LTD. MMBTA42LT1 MMBTA43LT1 200 hFE , DC CURRENT GAIN V CE= 10Vdc T J = 125C 100 25C 50 - 55C 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain 100 20 f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) 50 C eb 10 5.0 2.0 C cb 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 70 50 T J = 25C V CE = 20 V 30 f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 V R, REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 2. Capacitance Figure 3. Current-Gain -- Bandwidth Product 100 1.4 T J = 25C 1.2 V, VOLTAGE (VOLTS) C, CAPACITANCE (pF) 100 1.0 0.8 V BE(sat) @ I C /I B = 10 0.6 V BE(on) @ V CE = 10 V 0.4 5.0 0.2 V CE(sat) @ I C /I B = 10 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) Figure 4. "On" Voltages M28-3/3