LESHAN RADIO COMPANY, LTD.
M28–1/3
1
3
2
MMBTA42LT1
MMBTA43LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol
MMBTA42 MMBTA43
Unit
Collector–Emitter V oltage V CEO 300 200 Vdc
Collector–Base V oltage V CBO 300 200 Vdc
Emitter–Base V oltage V EBO 6.0 6.0 Vdc
Collector Current — Continuous I C500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) V (BR)CEO Vdc
(I C = 1.0 mAdc, I B = 0) MMBTA42 300 —
MMBTA43 200 —
Emitter–Base Breakdown Voltage V (BR)CBO Vdc
(I C= 100 µAdc, I E= 0) MMBTA42 300 —
MMBTA43 200 —
Emitter–Base Breakdown Voltage V (BR)EBO 6.0 — Vdc
(I E= 100 µAdc, I C= 0)
Collector Cutoff Current I CBO µAdc
( V CB= 200Vdc, I E= 0) MMBTA42 — 0.1
( V CB= 160Vdc, I E= 0) MMBTA43 — 0.1
Emitter Cutoff Current I EBO µAdc
( V EB= 6.0Vdc, I C= 0) MMBTA42 — 0.1
( V EB= 4.0Vdc, I C= 0) MMBTA43 — 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
Value
LESHAN RADIO COMPANY, LTD.
M28–2/3
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Ma x Unit
ON CHARACTERISTICS (3)
DC Current Gain hFE ––
(I C = 1.0 mAdc, V CE = 10 Vdc) Both Types 25 —
(I C = 10 mAdc, V CE = 10 Vdc) Both Types 40 —
MMBTA42 40 —
(I C = 30 mAdc, V CE = 10 Vdc) MMBTA43 40 —
Collector–Emitter Saturation V oltage VCE(sat) Vdc
(I C = 20 mAdc, I B = 2.0 mAdc) MMBTA42 — 0.5
MMBTA43 — 0.5
Base–Emitter Saturation V oltage V BE(sat) — 0.9 Vdc
(I C = 20 mAdc, I B= 2.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product fT50 — MHz
(V CE = 20 Vdc, I C = 10mA, f = 100 MHz)
Collector – Base Capacitance C cb pF
(V CB= 20 Vdc, I E= 0, f = 1.0 MHz) MMBTA42 — 3.0
MMBTA43 — 4.0
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
MMBTA42LT1 MMBTA43LT1
LESHAN RADIO COMPANY, LTD.
M28–3/3
200
100
50
30
20
hFE , DC CURRENT GAIN
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I C , COLLECT OR CURRENT (mA)
Figure 8. DC Current Gain
T
J
= 125°C
25°C
– 55°C
MMBTA42LT1 MMBTA43LT1
V
CE
= 10Vdc
C
eb
V R, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
C, CAPACITANCE (pF)
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
100
50
20
10
5.0
2.0
1.0
C
cb
f
T
, CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
I C , COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
T
J
= 25°C
V
CE
= 20 V
f = 20 MHz
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
100
70
50
30
20
10
V, VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
5.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
01.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
