NPN 2SC2073 EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT TO-220 ! Complement to 2SA940 ABSOLUTE MAXIMUM RATINGS (Ta=25C C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25c) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC 150 150 5 1.5 25 V V V A W Tj Tstg 150 -50~150 c c ELECTRICAL CHARACTERISTICS (Ta=25C C) Characterristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Symbol ICBO IEBO hFE VCE(sat) fT Test Condition VCB= 120V , IE=0 VEB= 5V , IC=0 VCE= 10V , IC=0.5A IC=0.5A, IB=50mA VCE= 10V , IC=0.5A Min Typ 40 Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: ic@wingshing.com 4 Max Unit 10 10 75 1.5 A A V MHZ