MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 6
www.unisonic.com.tw QW-R220-001,B
ABSOLUTE MAXIMUM RATING (NOET 1) (Ta=25℃ unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Emitter Voltage VCEO -60 V
Collector-Base Voltage VCBO -60 V
Emitter-Base Voltage VEBO -5 V
Collector Current-Continuous IC -800 mA
Operating Junction and Storage Temperature TJ, TSTG -55 ~ +150 ℃
Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
SOT-23 357 °C/W
Thermal Resistance Junction-Case SOT-323 θJA 455 °C/W
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage* BVCEO IC=-10mA, IB=0 -60 V
Collector-Base Breakdown Voltage BVCBO IC=-10μA, IE=0 -60 V
Emitter-Base Breakdown Voltage BVEBO IE=-10μA , IC=0 -5 V
Base Cutoff Current IB VCB=-30V, VEB=-0.5V
-50 nA
Collector Cutoff Current ICEX VCE=-30V, VBE=-0.5V
-50 nA
VCB=-50V, IE=0
-0.02 μA
Collector Cutoff Current ICBO VCB=-50V, IE=0, TA=150℃
-20 μA
ON CHARACTERISTICS
IC=-0.1mA, VCE=-10V 75
IC=-1.0 mA, VCE=-10V 100
IC=-10 mA, VCE=-10V 100
IC=-150 mA, VCE=-10V* 100 300
DC Current Gain hFE
IC=-500 mA, VCE=-10V* 50
IC=-150 mA, IB=-15mA
-0.4 V
Collector-Emitter Saturation Voltage* VCE(SAT) IC=-500 mA, IB=-50mA
-1.6 V
IC=-150 mA, IB=-15mA*
-1.3 V
Base-Emitter Saturation Voltage VBE(SAT) IC=-500 mA, IB=-50mA
-2.6 V
SMALL SIGNAL CHARACTERISTICS
Current Gain – Bandwidth Product fT I
C=-50mA, VCE=-20V, f=100MHz 200 MHz
Output Capacitance Cobo VCB=-10V, IE=0, f=100kHz 8 pF
Input Capacitance Cibo VEB=-2V, IC=0, f=100kHz 30 pF
SWITCHING CHARACTERISTICS
Turn-on Time tON 45 ns
Delay Time td 10 ns
Rise Time tr
VCC=30V, IC=-150mA, IB1=-15mA
40 ns
Turn-off Time toff 100 ns
Storage Time ts 80 ns
Fall Time tf
VCC=6V, IC=-150mA,
IB1= IB2=-15mA 30 ns
THERMAL CHARACTERISTICS
SOT-23 350 mW
Total Device Dissipation PD SOT-323 275 mW
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0%
Note: Device mounted on FR-4 PCB 1.6” x 1.6” x 0.06.”