1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
IN1IN2
D1D2
S1S2
V– V+
GND NC
S4S3
D4D3
IN4IN3
Top View
S1S2
V– V+
NC NC
GND NC
S4S3
LCC
NC IN3D3
D4IN4
NC IN2D2
D1IN1
Key
910111213
4
5
6
7
8
1231920
14
15
16
17
18
Dual-In-Line, SOIC and TSSOP
DG201HS
Vishay Siliconix
Document Number: 70038
S-52433—Rev. F, 06-Sep-99 www.vishay.com FaxBack 408-970-5600
4-1
High-Speed Quad SPST CMOS Analog Switch
Fast Switching—tON: 38 ns
Low On-Resistance: 25
Low Leakage: 100 pA
Low Charge Injection
TTL/CMOS Logic Compatible
Single Supply Compatibility
High Current Rating: –30 mA
Faster Throughput
Higher Accuracy
Reduced Pedestal Error
Upgrades Existing Designs
Simple Interfacing
Replaces HI201HS, ADG201HS
Space Savings (TSSOP)
Data Acquisition
Hi-Rel Systems
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Integrator Reset Circuits
Choppers
Gain Switching
Avionics
The DG201HS is an improved monolithic device containing
four independent analog switches. It is designed to provide
high speed, low error switching of analog signals. Combining
low on-resistance (25 ) with high speed (tON: 38 ns), the
DG201HS is ideally suited for high speed data acquisition
requirements.
To achieve high voltage ratings and superior switching
performance, the DG201HS is built on a proprietary
high-voltage silicon-gate process. An epitaxial layer prevents
latchup.
Each switch conducts equally well in both directions when on,
and blocks input voltages to the supply values, when off.
Logic Switch
0 ON
1 OFF
Logic “0” 0.8 V
Logic “1” 2.4 V
DG201HS
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-2 Document Number: 70038
S-52433—Rev. F, 06-Sep-99
ORDERING INFORMATION
Temp Range Package Part Number
40 85 C
16-Pin Plastic DIP DG201HSDJ
–40 to 85_C16-Pin Narrow SOIC DG201HSDY
16-Pin TSSOP DG201HSDQ
–
55 to 125
_
C
16-Pin CerDIP DG201HSAK/883
–
55
to
125_C
LCC-20 DG201HSAZ/883
ABSOLUTE MAXIMUM RATINGS
V+ to V– 44 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND to V– 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa VS, VD(V–) –4 V to (V+) +4 V. . . . . . . . . . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current, S or D (Pulsed 1 ms, 10% duty cycle) 100 mA. . . . . . . . . . . . . . . . . .
Storage Temperature (A Suffix) –65 to 150_C. . . . . . . . . . . . . . . . . . .
(D Suffix) –65 to 125_C. . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIPc470 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin CerDIPd900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow Body SOIC and TSSOPe600 mW. . . . . . . . . . . . . . . . . . . . . . .
LCC-20d900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/_C above 75_C.
d. Derate 12 mW/_C above 75_C.
e. Derate 7.6 mW/_C above 75_C.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
FIGURE 1.
GND
V–
DX
SX
V+
5 V
Reg
V+
INX
V–
Level
Shift/
Drive
DG201HS
Vishay Siliconix
Document Number: 70038
S-52433—Rev. F, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600
4-3
Test Conditions
Unless Specified A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V
VIN = 3 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full V– V+ V– V+ V
Drain-Source On-Resistance rDS(on) IS = –10 mA, VD = "8.5 V
V+ = 13.5 V, V– = –13.5 V Room
Full 25 50
75 50
75 W
rDS(on) Match Room 3 %
Switch Off Leakage Current
IS(off) V+ = 16.5 V, V– = –16.5 V
VD=
"15.5 V
Room
Full 0.1 –1
–60 1
60 –1
–20 1
20
A
Switch
Off
Leakage
Current
ID(off)
V
D =
"15
.
5
V
VS = #15.5 V Room
Full 0.1 –1
–60 1
60 –1
–20 1
20 nA
Channel On Leakage Current ID(on) V+ = 16.5 V, V– = –16.5 V
VS = VD = #15.5 V Room
Full 0.1 –1
–60 1
60 –1
–20 1
20
Digital Control
Input, High Voltage VINH Full 2.4 2.4
V
Input, Low V oltage VINL Full 0.8 0.8
V
Input Capacitance Cin Full 5 pF
Input Current IINL or IINH VIN under test = 0.8 V, 3 V Full –1 1 –1 1 mA
Dynamic Characteristics
Turn-On Time tON R
L
= 1 kW
,
C
L
= 35
p
F
Room
Full 48 60
75 60
75
T urn-Off Time tOFF1
RL
=
1
kW
,
CL
=
35
pF
VS = "10 V, VINH = 3 V
See Figure 2 Room
Full 30 50
70 50
70 ns
tOFF2 Room 150
Output Settling T ime to 0.1% tsRoom 180
Charge Injection Q CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 WRoom –5 pC
OFF Isloation OIRR RL = 1 kW, CL = 10 pF
f = 100 kHz Room 85
dB
Crosstalk
(Channel-to-Channel) XTALK Any Other Channel Switches
RL = 1 kW, CL = 10 pF
f = 100 kHz Room 100 dB
Source Off Capacitance CS(off)
VV 0Vf1MH
Room 8
F
Drain Off Capacitance CD(off)
VS, VD
=
0 V, f
=
1 MHz
Room 8
pF
Channel On Capacitance CD(on)
V
S,
V
D =
0
V
,
f
=
1
MHz
Room 30
pF
Drain-to-Source Capacitance CDS(off) Room 0.5
Power Supplies
Positive Supply Current I+
V+ 15 V V 15 V
Room
Full 4.5 10 10
mA
Negative Supply Current I– V+ = 15 V, V– = –15 V
VIN = 0 or 5 V Room
Full 3.5 –6 –6
mA
Power ConsumptioncPCFull 240 240 mW
DG201HS
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-4 Document Number: 70038
S-52433—Rev. F, 06-Sep-99
Test Conditions
Unless Specified
V+=108Vto165V
A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol
V
+ =
10
.
8
V
t
o
16
.
5
V
V– = GND = 0 V
VIN = 3 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full 0 V+ 0 V+ V
Drain-Source On-Resistance rDS(on) IS = –10 mA, VD = 8.5 V
V+ = 10.8 V Room
Full 65 90
120 90
120 W
Switch Off Leakage Current
IS(off) V+ = 16.5 V, VS = 0.5 V, 10 V
V10V05V
Room
Full 0.1 –1
–60 1
60 –1
–20 1
20
A
Switch
Off
Leakage
Current
ID(off)
,S,
VD = 10 V, 0.5 V Room
Full 0.1 –1
–60 1
60 –1
–20 1
20 nA
Channel On Leakage
Current ID(on) +
IS(on) V+ = 16.5 V, VD = 0.5 V, 10 V Room
Full 0.1 –1
–60 1
60 –1
–20 1
20
Digital Control
Input, High Voltage VINH Full 2.4 2.4
V
Input, Low V oltage VINL Full 0.8 0.8
V
Input Capacitance Cin Full 5 pF
Input Current IINL or IINH V+ = 16.5 V
VIN under test = 0.8 V, 3 V Full –1 1 –1 1 mA
Dynamic Characteristics
Turn-On Time tON
R1kWC35FV2V
Room
Full 50
70 50
70
T urn-Off Time tOFF1 RL = 1 kW, CL = 35 pF, VS = 2 V
V= 10.8 V, See Figure 2 Room
Full 50
70 50
70 ns
tOFF2 Room 150
Output Settling T ime to 0.1% tsRoom 180
Charge Injection Q CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 WRoom 10 pC
Off Isloation OIRR RL = 1 kW, CL = 10 pF
f = 100 kHz Room 85
dB
Crosstalk
(Channel-to-Channel) XTALK Any Other Channel Switches
RL = 1 kW, CL = 10 pF
f = 100 kHz Room 100 dB
Source Off Capacitance CS(off)
f
=
1 MHz
Room 10
F
Drain Off Capacitance CD(off)
f
=
1
MHz
Room 10 pF
Channel On Capacitance CD(on) VANALOG = 0 V Room 30
Power Supplies
Positive Supply Current I+
V+
=
15 V, VIN
=
0 or 5 V
Full 10 10 mA
Power ConsumptioncPC
V+
=
15
V
,
V
IN =
0
or
5
V
Full 150 150 mW
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. T ypical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG201HS
Vishay Siliconix
Document Number: 70038
S-52433—Rev. F, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600
4-5
_
–20 –16 –12 –8 –4 0 4 8 12 16 20
0
10
20
30
40
50
60
70
5 V
rDS(on) vs. VD and Power Supply Voltages
VD – Drain Voltage (V)
10 V
15 V
20 V
0
10
20
30
40
50
–15 –10 –5 0 5 10 15
rDS(on) vs. VD and Temperature
VD – Drain Voltage (V)
125_C
85_C
–55_C
0_C
V+ = 15 V
V– = –15 V
rDS(on)
– Drain-Source On-Resistance ( )
rDS(on)
– Drain-Source On-Resistance ( )
0246810121416
0
20
40
60
80
100
120
140
160
180
rDS(on) vs. VD and Single Power Supply Voltages
VD – Drain Voltage (V)
V+ = 5 V
7 V
10 V
12 V 15 V
–60 –40 –20 0 20 40 60 80 100 120 140
10 pA
100 pA
1 nA
10 nA
ID(on)
Leakage
Leakage Currents vs. Temperature
Temperature (_C)
IS(off), ID(off)
0
0.5
1
1.5
2
2.5
VTH ()V
Input Switching Threshold vs. Supply Voltage
Positive Supplies (V)
4 6 8 101214161820 30
35
40
45
50
55
46810 12 14 16 18 20
Switching Time vs. Power Supply Voltage
Supply Voltage (V)
Switching T ime (ns)
rDS(on)
– Drain-Source On-Resistance ( )
tON
tOFF
25_C
DG201HS
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-6 Document Number: 70038
S-52433—Rev. F, 06-Sep-99
_
–55 –25 0 25 50 75 100 125
20
25
30
35
40
45
Temperature (_C)
Switching Times vs. Temperature
Switching T ime (ns)
tON
tOFF
V+ = 15 V
V– = –15 V
4 6 8 101214161820
30
35
40
45
50
55
60
65
V+ – Positive Supply (V)
Switching Times vs. Single Supply Voltage
(ns)tON
,t
OFF
tON
tOFF
–55 –25 0 25 50 75 100 125
20
25
30
35
40
45
50
Temperature (_C)
Switching Times vs. Temperature
Switching T ime (ns)
V+ = 10.8 V
V– = 0 V
–15 –10 –5 0 5 10 15
–40
–30
–20
–10
0
10
20
VS – Source Voltage (V)
V+ = 15 V, V– = 0 V
V+ = 15 V
V– = –15 V
Chargie Injection (pC)
Charge Injection vs. Source Voltage
10 k 100 k 1 M 10 M
40
50
60
70
80
90
100
110
120
f – Frequency (Hz)
Off Isolation vs. Frequency
OIRR
RL = 100
V+ = 15 V
V– = –15 V
RL = 1 k
tON
tOFF
DG201HS
Vishay Siliconix
Document Number: 70038
S-52433—Rev. F, 06-Sep-99 www.vishay.com FaxBack 408-970-5600
4-7
10%
90%
FIGURE 2. Switching Time
10 V
RL
RL + rDS(on)
VO = VS
CL (includes fixture and stray capacitance)
V–
V+
IN
S
CL
35 pF
D
3 V RL
1 kW
VO
–15 V
GND
+15 V
50%
0 V
3 V
tOFF1
tON
VO
VS
tr <20 ns
tf <20 ns
Logic
Input
Switch
Input
Switch
Output tOFF2
FIGURE 3. Charge Injection
CL
1 nF
3 V V–
–15 V
VO
GND
V+
RgS D
IN
+15 V
S
IN RL
D
Rg = 50 W
VSVO
0V, 3 V
Off Isolation = 20 log VS
VO
V+
–15 V
GND V– C
C
+15 V
FIGURE 4. Off Isolation
50 W
D1
VO
Rg = 50 W
S1
+15 V
–15 V
D2
GND
V+
V–
NC
C
C
S2
RL
IN1
XTALK Isolation = 20 log VS
VO
0V, 3 V
0V, 3 V
VS
IN2
C = RF bypass
FIGURE 5. Crosstalk
DVO
VO
INXSWON OFF
Q = DVO x CL
DG201HS
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4-8 Document Number: 70038
S-52433—Rev. F, 06-Sep-99
A high-speed, low-glitch analog switch such as Vishay Siliconix’s DG201HS improves the accuracy and shortens the acquisition
and settling times of a sample-and-hold circuit.
VANALOG
Input
Buffer
Si581
SAMPLE/HOLD
CH
(Polystyrene)
JFET Buffer
OUTPUT
to A/D Converter
DG201HS
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
