ST203CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A FEATURES * * * * * * * * * * * TO-200AB (A-PUK) PRODUCT SUMMARY IT(AV) Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt International standard case TO-200AB (A-PUK) Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT TYPICAL APPLICATIONS 370 A * * * * Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2 t TEST CONDITIONS Ths Ths UNITS 370 A 55 C 700 A 25 C 50 Hz 5260 60 Hz 5510 50 Hz 138 60 Hz 126 A VDRM/VRRM tq VALUES Range TJ kA2s 1000 to 1200 V 20 to 30 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 10 1000 1100 12 1200 1300 ST203C..C Document Number: 94370 Revision: 30-Apr-08 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST203CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180 el ITM UNITS 100 s 180 el 50 Hz 860 750 1340 1160 5620 5020 400 Hz 840 706 1400 1220 2940 2590 1000 Hz 700 580 1350 1170 1750 1520 2500 Hz 430 340 980 830 910 Voltage before turn-on Vd 50 50 VDRM VDRM VDRM Rise of on-state current dI/dt 50 Heatsink temperature 40 Equivalent values for RC circuit 780 50 Recovery voltage Vr 55 47/0.22 40 A V 55 47/0.22 A/s 40 55 C /F 47/0.22 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one half cycle, non-repetitive surge current ITSM TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled 700 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage C 5260 t = 10 ms I2t A 55 (85) t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 5510 A 4420 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 4630 138 126 98 t = 0.1 to 10 ms, no voltage reapplied 1380 VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.72 1.17 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.22 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.92 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.83 Maximum holding current IH TJ = 25 C, IT > 30 A 600 Typical latching current IL TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A 1000 For technical questions, contact: ind-modules@vishay.com kA2s 89 I2t Low level value of threshold voltage www.vishay.com 2 UNITS 370 (140) DC at 25 C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES kA2s V m mA Document Number: 94370 Revision: 30-Apr-08 ST203CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current dI/dt Typical delay time td TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code minimum Maximum turn-off time TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt maximum VALUES UNITS 1000 A/s 0.8 20 s 30 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d % = 50 60 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied 200 W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Approximate weight Case style Document Number: 94370 Revision: 30-Apr-08 0.17 DC operation double side cooled Mounting force, 10 % See dimensions - link at the end of datasheet For technical questions, contact: ind-modules@vishay.com C K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) www.vishay.com 3 ST203CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.015 0.017 0.011 0.011 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 ST203C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 O 90 Conduction angle 80 70 60 180 60 30 50 ST203C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 90 120 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 130 110 100 90 O Conduction angle 80 70 60 50 180 40 30 30 0 50 150 100 250 200 Average On-State Current (A) 90 120 200 300 400 500 Average On-State Current (A) Fig. 3 - Current Ratings Characteristics 130 130 110 100 90 O 80 Conduction period 70 60 50 60 40 30 DC 90 30 120 180 ST203C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (C) ST203C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 Maximum Allowable Heatsink Temperature (C) 100 0 Fig. 1 - Current Ratings Characteristics 110 100 90 O 80 Conduction period 70 60 50 DC 40 30 20 30 60 120 90 180 20 0 www.vishay.com 4 60 20 40 50 100 150 200 250 300 350 400 0 100 200 300 400 500 600 700 Average On-State Current (A) Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics For technical questions, contact: ind-modules@vishay.com 800 Document Number: 94370 Revision: 30-Apr-08 ST203CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A 5500 180 120 90 60 30 900 800 700 600 RMS limit 500 400 O 300 Conduction angle 200 ST203C..C Series TJ = 125 C 100 3000 0.1 1 Average On-State Current (A) Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled DC 180 120 90 60 30 1200 1000 800 RMS limit 600 O Conduction period 400 ST203C..C Series TJ = 125 C 200 0 0 100 200 300 400 500 600 700 Instantaneous On-State Current (A) Maximum Average On-State Power Loss (W) 3500 Fig. 5 - On-State Power Loss Characteristics 1400 10 000 ST203C..C Series 1000 TJ = 25 C TJ = 125 C 100 1.0 800 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Average On-State Current (A) Instantaneous On-State Voltage (V) Fig. 6 - On-State Power Loss Characteristics Fig. 9 - On-State Voltage Drop Characteristics 1 5000 At any rated load condition and with rated VRRM applied following surge ST203C..C Series Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 ZthJ-hs - Transient Thermal Impedance (K/W) 4500 Peak Half Sine Wave On-State Current (A) 4000 ST203C..C Series 2000 0.01 100 150 200 250 300 350 400 450 50 4500 2500 0 0 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 5000 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 1000 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 ST203C..C Series 2000 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Document Number: 94370 Revision: 30-Apr-08 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST203CPbF Series Qrr - Maximum Reverse Recovery Charge (C) Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A 160 Irr - Maximum Reverse Recovery Current (A) 250 ITM = 500 A ST203C..C Series TJ = 125 C ITM = 300 A 200 ITM = 200 A 150 100 ITM = 100 A 50 ITM = 50 A ITM = 500 A 140 ITM = 300 A 120 ITM = 200 A 100 ITM = 100 A ITM = 50 A 80 60 40 ST203C..C Series TJ = 125 C 20 0 0 0 20 40 60 80 0 100 40 60 80 100 dI/dt - Rate of Fall of Forward Current (A/s) dI/dt - Rate of Fall of On-State Current (A/s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 100 1000 500 200 400 1500 1000 50 Hz 2500 3000 5000 ST203C..C Series Sinusoidal pulse TC = 40 C tp 10 000 Peak On-State Current (A) 10 000 Peak On-State Current (A) 20 400 500 1500 1000 2500 3000 5000 100 1000 ST203C..C Series Sinusoidal pulse TC = 55 C 10 000 100 10 50 Hz 200 100 1000 tp 100 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 10 000 10 100 Pulse Basewidth (s) 1000 10 000 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics 10 000 Snubber circuit Rs = 22 Cs = 0.15 F VD = 80 % VDRM 50 Hz 400 200 1000 1000 2500 1500 100 500 3000 5000 100 10 000 tp ST203C..C Series Trapezoidal pulse TC = 40 C dI/dt = 50 A/s Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 400 1000 1000 500 2500 50 Hz 100 200 1500 3000 5000 100 10 000 tp ST203C..C Series Trapezoidal pulse TC = 55 C dI/dt = 50 A/s 10 10 10 100 1000 10 000 10 Pulse Basewidth (s) 100 1000 10 000 Pulse Basewidth (s) Fig. 14 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94370 Revision: 30-Apr-08 ST203CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 1000 2500 50 Hz 100 400 Peak On-State Current (A) Peak On-State Current (A) 10 000 200 500 1500 3000 5000 100 ST203C..C Series Trapezoidal pulse TC = 40 C dI/dt = 100 A/s 10 000 tp Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 50 Hz 400 1000 100 200 500 1500 2500 3000 5000 100 ST203C..C Series Trapezoidal pulse TC = 55 C dI/dt = 100 A/s 10 000 tp 10 10 10 100 1000 10 000 10 100 Pulse Basewidth (s) 1000 10 000 Pulse Basewidth (s) Fig. 15 - Frequency Characteristics 100 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 1 1000 0.3 0.2 4 2 10 0.5 0.1 100 ST203C..C Series Sinusoidal pulse tp ST203C..C Series Rectangular pulse dI/dt = 50 A/s 10 000 20 joules per pulse 10 1000 3 0.5 1 0.3 5 2 0.2 100 0.1 tp 10 10 10 100 1000 10 000 10 Pulse Basewidth (s) 100 1000 10 000 Pulse Basewidth (s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (a) (b) TJ = 40 C 1 TJ = 25 C TJ = 125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST203C..C Series 0.1 Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94370 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST203CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A ORDERING INFORMATION TABLE Device code ST 20 3 C 12 C H H 1 - P 1 2 3 4 5 6 7 8 9 10 11 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn-off 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AB (A-PUK) 7 - Reapplied dV/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet terminals dV/dt - tq combinations available dV/dt (V/s) 20 50 100 200 400 20 CK DK EK tq (s) 25 CJ DJ EJ FJ* 30 CH DH EH FH HH (gate and auxiliary cathode unsoldered leads) * Standard part number. All other types available only on request. 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 10 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) 11 - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95074 For technical questions, contact: ind-modules@vishay.com Document Number: 94370 Revision: 30-Apr-08 Outline Dimensions Vishay Semiconductors TO-200AB (A-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7/14.4 (0.54/0.57) 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95074 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000