2DB1184Q
Document number: DS31504 Rev. 5 - 2
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May 2014
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2DB1184Q
50V PNP MEDIUM POWER TRANSISTOR IN TO252
Features
• BVCEO > -50V
• I
C = -3A High Continuous Collector Current
• I
CM = -4.5A Peak Pulse Current
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
• Weight: 0.34 grams (approximate)
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
2DB1184Q-13 AEC-Q101 2DB1184Q 13 16 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2DB1184Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 14 = 2014)
WW = Week Code 01-52
YYWW
2DB1184Q
Top View Device Schematic Pin Out Configuration
Top view
TO252 (DPAK)
C
E
B
e3
C
E
B
2DB1184Q
Document number: DS31504 Rev. 5 - 2
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -3 A
Peak Pulse Collector Current ICM -4.5 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 1.2 W
Power Dissipation @TL = +25°C (Note 6) PD 15 W
Thermal Resistance, Junction to Lead (Note 5) RθJA 104 °C/W
Thermal Resistance, Junction to Ambient (Note 6) RθJL 8.3 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Note: 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)
1
Figure 1 Transient Thermal Response
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 110°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
2DB1184Q
Document number: DS31504 Rev. 5 - 2
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2DB1184Q
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage BVCBO -60 — — V
IC = -50µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO -50 — — V
IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO -5 — — V
IE = -50µA, IC = 0
Collector Cutoff Current ICBO — — -1 µA
VCB = -40V, IE = 0
Emitter Cutoff Current IEBO — — -1 µA
VEB = - 4V, IC = 0
ON CHARACTERISTICS (Note 8)
Collector-Emitter Saturation Voltage VCE(sat) — — -1 V
IC = -2A, IB = -0.2A
Base-Emitter Saturation Voltage VBE(sat) — — -1.2 V
IC = -1.5A, IB = -0.15A
DC Current Gain hFE 120 — 270 —
VCE = -3V, IC = -0.5A
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT — 110 — MHz
VCE = -5V, IC = -0.1A,
f = 30MHz
Output Capacitance Cobo — 26 — pF
VCB = -10V, f = 1MHz
Turn-On Time ton — 109 — ns
VCC = 30V
ICC = 150mA
IB1 = - IB2 = 15mA
Delay Time td — 60 — ns
Rise Time tr — 49 — ns
Turn-Off Time toff — 280 — ns
Storage Time ts — 246 — ns
Fall Time tf — 34 — ns
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
200
400
600
800
1,000
0.1 1 10
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
-I ,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(mA)
C
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
0
50
100
150
200
250
300
350
400
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 3 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
EN
T
G
AIN
FE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A
V = -3V
CE
2DB1184Q
Document number: DS31504 Rev. 5 - 2
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2DB1184Q
0
0.1
0.2
0.3
0.4
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V ,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
I/I = 10
CB
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
Figure 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
C
-V , BASE-EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -3V
CE
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
Figure 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
-I , COLLECTOR CURRENT (A)
C
-V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
I/I = 10
CB
10
100
1,000
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Figure 7 Typical Capacitance Characteristics
C
A
P
A
C
I
T
A
N
C
E (pF)
C
ibo
C
obo
f = 1MHz
0
20
40
60
80
100
120
140
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Figure 8 Typical Gain-Bandwidth Product vs. Collector Current
f,
G
AI
N
-BA
N
D
WI
D
T
H
P
R
O
D
U
C
T (
M
H
z)
T
V = -5V
CE
f = 30MHz
0.01
0.1
1
10
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 9 Safe Operating Area (Note 3)
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
T = 25°C
Single Non-repetitive Pulse
A
DC (mA)
Pw = 100ms (mA)
Pw = 10ms (mA)
Pw = 1ms (mA)
Pw = 100µs (mA)
2DB1184Q
Document number: DS31504 Rev. 5 - 2
5 of 6
www.diodes.com
May 2014
© Diodes Incorporated
2DB1184Q
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
TO252 (DPAK)
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21 - -
e - - 2.286
E 6.45 6.70 6.58
E1 4.32 - -
H 9.40 10.41 9.91
L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a 0° 10° -
All Dimensions in mm
Dimensions Value (in mm)
C 4.572
X 1.060
X1 5.632
Y 2.600
Y1 5.700
Y2 10.700
b3
E
L3
DL4
b2
︵
2x
︶
b
︵
3x
︶
e
c2
A
7°±1°
H
Seating Plane
A1
Gauge Plane
a
0.508
L
2.74REF
D1
A2
E1
X1
X
Y2
Y1
Y
C
2DB1184Q
Document number: DS31504 Rev. 5 - 2
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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