Product Bulletin OP506A June 1996 (Sp, OPTEK NPN Silicon Phototransistors Types OP506A, OP506B, OP506C, OP506D MEASUREMENT SURFACE (NOTE am 200 (5.08) g 1884.19) 7180 (4.57) 148 (3.68) MITER | 050 (1.27) L 100 (2.54) 125 (3.18) NOM LMS (2.92) E a . yl 028 (0.84) 6 ay COLLECTOR -01S (0.38) (500 (12.70) +} ka 030 (0.76) MIN NOM DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Narrow receiving angle Variety of sensitivity ranges T-1 package style Small package size for space limited applications Description The OP506 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100% production tested using infrared light for close correlation with Opteks GaAs and GaAlAs emitters. Lead spacing is 0.100" (2.54mm). Absolute Maximum Ratings (Ta = 25 C unless otherwise noted) Collector-Emitter Voltage... eee eet eas 30 V Emitter-Collector Voltage .. 0... teen t eens 5.0V Storage and Operating Temperature Range................4. -40 C to +100 C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering C6) 260 Cc") Power Dissipation. ... 2.0... 2... cece ec ete tenes 100 mw?) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.38 mW/ C above 25 C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm anda radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) To calculate typical collector dark current in pA, use the formula Icep = 490-407 .34) where Ta is ambient temperature in C. Typical Performance Curves Typical Spectral Response Coupling Characteristics of OP166 and OP506 100 J 1.0 eg 0.8 e = p= 20 mA @ \ = Vce=5V 06 S w 5 \ Q = g / 2 a4 N o = N 40 5 \ SI 3 0.2 2 2 0 0 0.2 0.4 0.6 0.8 1.0 g DISTANCE BETWEEN LENS TIPS Inches 600 700 600s oo 100 Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 3-10 Types OP506A, OP506B, OP506C, OP506D Electrical Characteristics (Ta = 25 C unless otherwise noted) Typical Performance Curves Normalized Collector Current vs SYMBOL PARAMETER MIN | TYP | MAX | UNITS TEST CONDITIONS Icon) _ |On-State Collector Current OP506D) 0.55 mA |Vce = 5 V, Ee = 0.50 mwiem2" OP506C! 1.10 3.00 | mA |VcE=5V, Ee = 0.50 mWiem"4) OPS506B | 2.15 5.95 | mA |Vce=5 V, Ee = 0.50 mWicm?4) OPS506A! 4.30 mA |VcE=5 V, Ee = 0.50 mWicem?4) Alc/AT [Relative Ic Changes with Temperature 1.00 MPC |\Vce=5V, Ee=1.0 mWicm? IcEo _|Collector Dark Current 100 | nA |VcE=10V, Ee =0%) ViBr)ceo | Collector-Emitter Breakdown Voltage 30 V|lg = 100 pA V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 Vv le = 100 nA rE VcE(sat) |Collector-Emitter Saturation Voltage 0.40! V_ ic=250mA, Ee = 0.50 mWicm? [Ia 4 = 935 nm?) ee oO kK [o} x Qa On-State Collector Current vs Angular Displacement Irradiance 12 . ee otto & i 4 5 1.0 ip [Waals LK Zz z= F" (B) GaAs i 5 = 7 2 08 3S = SCCOMICCH bee o 1 4 = 06 = a NX 7 8 gs |-|--|--- -|-4J--|- -|--]|_ 2 on 4 N S (B) ns S 0.4 = = ~ 2 y \ % | Al 4 2 02 / \ o 901 Ey 3 Y NX 3 | L 8 Mtl ph) ey 7 0 9.001 40 320 20 10 Oo 1 2 30 40 ooo oor oe @ ANGULAR DISPLACEMENT Deg. Ee IRRADIANCE ~ mWicm Rise and Fall Time Normalized Output vs Load Resistance vs Frequency 240 Tyce=sV 0 Ty TTT P VaL=1 CKT 2 - RF= 10K * 200 | f= 100 He y \ DN F ' PW= 1 ms = | LED =0P290C @ d= 890 nm 5 \ ' = 160 F va_=is voltage across Att = CKT 1 - RL=1K 3 1 # | 2 LZ ia 2 120 yo i> # os = S& | 2 s = CKT 1- AL = 10K = 80 oe s t ee ~ = ] = Ye 5 al tA \ TA SS 3 Lit tt L 2 4 6 8 Ry LOAD RESISTANCE kf 10 10 100 FREQUENCY KHz 1,000 10,000 Normalized Collector Current vs Collector-to-Emitter Voltage Test Conditions: Ta = 25C Ee=1 mWicn? per step, A= 890 am A: Offset Region (~ 30 mV) B: VCE(SAT} at fixed Ic. decreases as optical input increases 2.0 Ic NORMALIZED COLLECTOR CURRENT 0.25 Vee COLLECTOR TO EMITTER Volts 05 Switching Time Test Circuit CIRCUIT 1 CIRCUIT 2 Ip Voc=5 V lf Vec=5V * Vout 1602 Ry 1002 Test Conditions: Light source is pulsed LED with t; and tf = 00 ns. IF is adjusted for VQUT = 1 Volt. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 3-11 (972)323-2200 Fax (972)323-2396