Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz-- 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. AGR19045EU AGR19045EF Figure 1. Available Packages Features Typical EDGE performance, 1990 MHz, 26 V, IDQ = 350 mA: -- Output power (POUT): 15 W typ. -- Power gain: 14.5 dB. -- Efficiency: 34% typ. -- Spectral regrowth: @ 400 kHz = -63 dBc. @ 600 kHz = -74 dBc. -- Error vector magnitude (EVM) = 1.60%. N-CDMA performance: 1990 MHz, 28 V, IDQ = 400 mA, IS-95 CDMA pilot, sync, paging, traffic codes 8--13 (9 channels): -- Output power (POUT): 4.5 W average. -- Power gain: 15.5 dB. -- Efficiency: 18.5%. -- Adjacent channel power: 885 kHz: -52 dBc @ 30 kHz bandwidth (BW). 1.25 MHz: -58 dBc @ 12.5 kHz BW. 2.25 MHz: -55 dBc @ 1 MHz BW. Typical performance over entire GSM band: -- P1dB: 45 W typ. -- Power gain: @ P1dB = 14.5 dB CW. -- Efficiency @ P1dB = 56% typ. CW. -- Return loss: -12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Best-in-class thermal resistance. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W continuous wave (CW) output power. Large signal impedance parameters available. Parameter Thermal Resistance, Junction to Case: AGR19045EU AGR19045EF Sym Value Unit RJC RJC 1.5 1.5 C/W C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR19045EU AGR19045EF Derate Above 25 C: AGR19045EU AGR19045EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS -0.5, 15 Vdc PD PD 115 115 W W -- -- TJ 0.67 0.67 200 W/C W/C C TSTG -65, 150 C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR19045E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet November 2003 Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS -- -- 1.3 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) IDSS -- -- 4 Adc GFS -- 3.0 -- S VGS(TH) -- -- 4.8 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 400 mA) VGS(Q) -- 3.7 -- Vdc Drain-source On-voltage (VGS = 10 V, ID = 0.4 A) VDS(ON) -- 0.3 -- Vdc Off Characteristics Drain-source Breakdown Voltage (VGS = 0 V, ID = 38 A) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.4 A) Gate Threshold Voltage (VDS = 10 V, ID = 130 A) Table 5. RF Characteristics Parameter Symbol Min Typ Max Unit Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) CRSS -- 1.0 -- pF Functional Tests (in Agere Systems Supplied Test Fixture) Common-source Amplifier Power Gain (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) GPS -- 15.5 -- dB Drain Efficiency (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) -- 27.5 -- % Third-order Intermodulation Distortion (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.228 MHz integration bandwidth centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) IM3 -- -33.5 -- dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz integration bandwidth centered at f1 - 885 kHz and f2 + 885 kHz, referenced to the carrier channel power) ACPR -- -49 -- dBc Input Return Loss (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) IRL -- -12 -- dB Output Power at 1 dB Gain Compression (VDD = 28 V, POUT = 45 W CW, f = 1990 MHz, IDQ = 400 mA) P1dB -- 45 -- W Ruggedness (VDD = 28 V, POUT = 45 W CW, IDQ = 400 mA, f = 1930 MHz, VSWR = 10:1 [all phase angles]) 2 No degradation in output power. Agere Systems Inc. Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Test Circuit Illustrations for AGR19045E VDD FB1 VGG R1 C23 C22 C12 C13 C14 C15 C16 C17 C18 C19 Z14 C1 C2 C3 Z7 C5 C4 Z8 Z9 Z10 C20 Z11 Z12 Z13 Z1 Z2 C6 Z3 Z4 Z5 Z6 2 1 DUT RF INPUT 3 C7 C21 RF OUTPUT PINS: 1. DRAIN 2. GATE 3. SOURCE A. Schematic B. Component Layout Parts List: Microstrip line: Z1, 0.320 in. x 0.067 in.; Z2, 0.185 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.430 in. x 0.160 in.; Z5, 0.120 in. x 0.675 in.; Z6, 0.280 in. x 0.795 in.; Z7, 0.640 in. x 0.355 in.; Z8, 0.240 in. x 0.430 in.; Z9, 0.405 in. x 0.130 in.; Z10, 0.145 in. x 0.067 in.; Z11, 0.275 in. x 0.067 in.; Z12, 0.260 in. x 0.067 in.; Z13, 0.520 in. x 0.030 in.; Z14, 0.365 in. x 0.050 in. (R) ATC B case chip capacitors: C5, C12, C22: 8.2 pF; C6, C20: 10 pF; C13: 1000 pF. (R) Kemet B case chip capacitors: C2, C16: 0.1 F CDR33BX104AKWS. Tantalum capacitor: C17, 1 F, 50 V, T491C. (R) Vitramon 1206: C4, C14: 22000 F. (R) Johanson Giga-Trim variable capacitors C7, C21: 0.4 pF--2.5 pF. (R) Murata 0805: C3, C15: 0.01 F, GRM40X7R103K100AL. (R) Sprague tantalum surface-mount chip capacitor: C1, C18, C19, C23: 22 F, 35 V. (R) Fair-Rite ferrite bead: FB1: 2743019447. Fixed film chip resistor: R1: 12 , 0.25 W, 0.08 x 0.13. PCB etched circuit boards. (R) Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. Figure 2. AGR19045E Test Circuit Agere Systems Inc. 3 AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet November 2003 U CT IN D 90 0.6 10 0.1 0.4 20 0.2 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 50 50 L OA D < RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 0.2 ) / Yo (-jB CE 1. 0 AN PT CE US ES 0 0.8 DU IN ,O o) R 0 5 0.36 0.11 -100 -90 0.13 0.1 Z X/ -70 40 -1 5 0. 06 (-j 0. 07 30 -1 0. 43 0 -12 8 0.0 2 0.4 9 0.0 1 0.4 0.4 0.39 0.38 F 0.37 0.12 -110 T 0. 2. 1.8 1.6 1.4 1.2 1.0 -4 0.14 -80 0.35 0.9 0 -4 0.15 0 -70 -5 6 4 0.8 0.1 0.3 0.7 35 5 3 -60 -5 7 -60 0.1 0.3 CA P AC I TI V 0.6 0.2 -30 CE CO M EN -65 18 0. 32 0. ER EA CT AN PO N 0. 0.4 31 0. 19 0. 0 -5 -25 -75 0.6 0 3. -20 5 4.0 0.0 -15 IV CT 1. 8 f1 0.3 f3 0.2 4 0. 0 44 5.0 -85 -10 2 ZS 0.2 0.3 0.2 9 4 0.0 0 -15 -80 8 0. -4 5 0.4 f1 f3 0.2 0.2 1 -30 6 0.6 0.2 0.4 0.4 ZL 10 0.48 0.1 -20 D OW A R 7 HST 0.4 N GT -170 EL E AV W < -90 -160 20 0.49 0. 8 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 10 0.0 > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 180 170 Typical Performance Characteristics MHz (f) 1930 (f1) 1960 (f2) 1990 (f3) ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 2.02 - j5.22 5.30 - j3.20 1.84 - j4.90 5.14 - j3.16 1.67 - j4.60 4.96 - j3.06 Note: ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion. GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances 4 Agere Systems Inc. Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 70 17 P3dB 16 50 P OUT 15 40 14 GPS 30 13 20 12 10 11 0 10 0 0.5 1 1.5 2 2.5 3 3.5 4 GPS (dB)Z (%), P OUT (W CW) Z P1dB 60 4.5 P IN (W CW)Z Test Conditions: VDD 28 V, IDQ = 400 mA, f = 1960 MHz. Figure 4. CW Output Power, Power Gain, and Drain Efficiency vs. Input Power -25 40 -30 35 885 kHz -35 30 2.25 MHz -40 25 1.25 MHz -45 20 -50 GPS 15 -55 10 -60 5 -65 0 -70 0 2 4 6 8 10 12 14 16 18 20 22 24 ACPR (dBc)Z GPS (dB),Z (%)Z 45 26 P OUT (W) (Avg. N-CDMA)Z Test Conditions: VDD 28 V, IDQ = 400 mA, f = 1990 MHz. Channel spacing (channel bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz), CDMA 9 channel forward carrier: pilot: 0, paging: 1, traffic 8 to 13, sync: 32. Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. Output Power Agere Systems Inc. 5 AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet November 2003 Typical Performance Characteristics (continued) 45 0 -10 GPS (dB), (%)Z 35 -20 30 -30 IM3 25 -40 20 -50 ACPR 15 -60 GPS 10 -70 5 IM3 (dBc), ACPR (dBc)Z 40 -80 0 2 4 6 8 10 12 14 16 18 20 POUT (W) (Average 2-Carrier N-CDMA)Z Test Conditions: VDD 28 V, IDQ = 400 mA, f1 = 1960 MHz, f2 = 1962.5 MHz. N-CDMA 9 channel forward carrier, channel spacing (channel bandwidth): 885 kHz (30 kHz), (9.8 dB peak/avg. ratio @ 0.01% probability) (CCDF). Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. Output Power 17 GPS, POWER GAIN (dB)z IDQ = 600 mA 16 IDQ = 500 mA IDQ = 400 mA 15 IDQ = 300 mA 14 13 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 POUT, OUTPUT POWER (W) (Average 2-Carrier N-CDMA)Z Test Conditions: VDD 28 V, IDQ = 400 mA, f1 = 1960 MHz, f2 = 1962.5 MHz. N-CDMA 9 channel forward carrier, channel spacing (channel bandwidth): 885 kHz (30 kHz), (9.8 dB peak/avg. ratio @ 0.01% probability) (CCDF). Figure 7. 2-Carrier N-CDMA, Power Gain vs. Output Power 6 Agere Systems Inc. Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) -40 ACPR (dBc)Z -45 IDQ = 300 mA -50 -55 IDQ = 600 mA -60 IDQ = 400 mA -65 IDQ = 500 mA -70 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 16 18 20 POUT (W) (Average 2-Carrier N-CDMA)Z Test Conditions: VDD = 28 V, f1 = 1960 MHz, f2 = 1962.5 MHz. N-CDMA 9 channel forward carrier: pilot: 0, paging: 1, traffic: 8 to 13, sync: 32. 1.2288 MHz source channel BW, channel spacing (BW) 885 kHz (30 kHz) (9.8 dB peak/avg. ratio @ 0.01% probability) (CCDF). Figure 8. 2-Carrier N-CDMA ACPR vs. Output Power -20 -25 IM3 (dBc)Z -30 IDQ = 300 mA -35 -40 IDQ = 600 mA -45 IDQ = 400 mA -50 IDQ = 500 mA -55 -6 -4 -2 0 2 4 6 8 10 12 14 POUT (W) (Average 2-Carrier N-CDMA)Z Test Conditions: VDD = 28 V, f1 = 1960 MHz, f2 = 1962.5 MHz. N-CDMA 9 channel forward carrier: pilot: 0, paging: 1, traffic: 8 to 13, sync: 32. 1.2288 MHz source channel BW, channel spacing (BW) 885 kHz (30 kHz) (9.8 dB peak/avg. ratio @ 0.01% probability) (CCDF). Figure 9. 2-Carrier N-CDMA IM3 vs. Output Power Agere Systems Inc. 7 AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet November 2003 Typical Performance Characteristics (continued) 70 17 P3dB 16 P OUT 50 15 40 14 30 13 GPS 20 12 10 11 0 10 0 0.5 1 1.5 2 2.5 GPS (dB)Z (%), P OUT (W CW)Z P1dB 60 3 3.5 4 4.5 PIN (W CW)Z Test Conditions: VDD 26 Vdc, IDQ = 350 mA, f = 1960 MHz. Figure 10. CW Output Power, Power Gain, and Drain Efficiency vs. Input Power GPS (dB), (%), RMS EVM AVERAGE (%) Z 45 -40 40 -45 35 -50 400 kHz 30 -55 25 -60 20 -65 GPS 15 -70 600 kHz 10 -75 RMS EVM Avg. 5 -80 0 -85 0 5 10 15 20 25 30 POUT (W) (Average GSM/EDGE)Z Test Conditions: VDD 26 Vdc, IDQ = 350 mA, f = 1960 MHz, modulation = GSM/EDGE. Figure 11. GSM/EDGE Spectral Regrowth, RMS EVM Average, Power Gain, and Drain Efficiency vs. Output Power 8 Agere Systems Inc. Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR19045EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 1 AGERE AGERE AGR19045U AGR21045U YYWWLL XXXXX YYWWLL ZZZZZZZ ZZZZZZZ 3 3 2 2 AGR19045EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 1 AGERE AGERE AGR19045F AGR21045F YYWWLL XXXXX YYWWLL ZZZZZZZ ZZZZZZZ 3 2 3 2 Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok, Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. Agere Systems Inc. 9 AGR19045E 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet November 2003 RF Power Product Information For product and application information, please visit our website: http://www.agere.com/rfpower. Fair-Rite is a registered trademark of Fair-Rite Products Corporation. ATC is a registered trademark of American Technical Ceramics Corp. Kemet is a registered trademark of KRC Trade Corporation. Sprague is a registered trademark of Sprague Electric Company Corporation. Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd. Murata is a registered trademark of Murata Electronics North America, Inc. Vitramon is a registered trademark of Vitramon Incorporated. For additional information, contact your Agere Systems Account Manager or the following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon Tel. (852) 3129-2000, FAX (852) 3129-2020 CHINA: (86) 21-5047-1212 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344 296 400 Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc. Copyright (c) 2003 Agere Systems Inc. All Rights Reserved August 2003 DS02-378RFPP