Preliminary Data Sheet
November 20 03
AGR19045E
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045E is a 45 W, 28 V N-channel laterally
diffused metal oxide s em ic onductor (LD M OS)
RF power fie ld effect tr ans is t or (F ET) suitable for
persona l co m munication s ervice (PCS) (1930 MHz—
1990 MHz), global system for m obile commu nic ation
(GSM/ED GE), time-divis ion multiple ac c es s (T D M A),
and single -c arrier or multica rrier class AB po w er
amplifier applications .
Figure 1. Available Packages
Features
■Typical EDGE performance,
1990 MHz, 26 V, IDQ = 350 mA:
— Output power (POUT): 15 W typ.
— Power gain: 14.5 dB.
— Efficiency: 34% typ.
— Spectral regrowth:
@ ±400 kHz = –63 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 1.60%.
■N-CDMA performance: 1990 MHz, 28 V,
IDQ = 400 mA, IS-95 CDMA pilot, sync, paging,
traffic codes 8—13 (9 channels):
— Output power (POUT): 4.5 W average.
— Power gain: 15.5 dB.
— Efficiency: 18.5%.
— Adjacent channel power:
885 kHz: –52 dBc @ 30 kHz bandwidth (BW).
1.25 MHz: –58 dBc @ 12.5 kHz BW.
2.25 MHz: –55 dBc @ 1 MHz BW.
■Typical performance over entire GSM band:
— P1dB: 45 W typ.
— Power gain: @ P1dB = 14.5 dB CW.
— Efficiency @ P1dB = 56% typ. CW.
— Return loss: –12 dB.
■High-reliability, gold-metalization process.
■Low hot carrier injection (HCI) induced bias drift
over 20 years.
■Best-in-class thermal resistance.
■Internally matched.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W continu-
ous wave (CW) output power.
■Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A 114B (HBM), JESD22-A 115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19045EU AGR19045EF
Parameter Sym Value Unit
Thermal Resi stance,
Junction to Case:
AGR19045EU
AGR19045EF RθJC
RθJC 1.5
1.5 °C/W
°C/W
Parameter Sym Value Unit
Drai n-sour ce V olt age VDSS 65 Vdc
Gate-source V oltage VGS –0.5, 15 Vdc
Total Dissipation at TC = 25 °C:
AGR19045EU
AGR19045EF PD
PD115
115 W
W
Derate Above 25 °C:
AGR19045EU
AGR19045EF —
—0.67
0.67 W/°C
W/°C
Operating Junction Tempera-
ture TJ200 °C
S tor age Tem peratu re Ra nge TSTG –65, 150 °C
AGR19045E Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
2Agere Systems Inc.
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor November 200 3
AGR19045E Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. d c Characteristics
Table 5. RF Characteristics
Parameter Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0V, ID=38µA) V(BR)DSS 65 —— Vdc
Gate-source Leakage Current (VGS =5V, VDS =0V) IGSS ——1.3 µAdc
Zero Gate Voltage Drain Leakage Current (VDS =28V, VGS =0V) IDSS ——4µAdc
On Characteristics
Forward Transconductance (VDS =10V, ID=0.4A) GFS —3.0 —S
Gate Threshold Voltage (VDS =10V, ID=130µA) VGS(TH) ——4.8 Vdc
Gate Quiescent Voltage (VDS =28V, ID= 400 mA) VGS(Q) —3.7 —Vdc
Drain-source On-voltage (VGS =10V, ID=0.4A) VDS(ON) —0.3 —Vdc
Parameter Symbol Min Typ Max Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28V, VGS =0, f=1.0MHz)
(This part is internally matched on both the input and output.)
CRSS —1.0 —pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =400mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
GPS —15.5 —dB
Drain Effici enc y
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =400mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η—27.5 —%
Third-order Intermodulation Distortion
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =400mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3
measured in a 1.228 MHz integration bandwidth centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
IM3 —–33.5 —dBc
Adjacent Channel Power Ratio
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =400mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 30 kHz integration bandwidth centered at f1 – 885 kHz
and f2 + 885 kHz, referenced to the carrier channel power)
ACPR —–49 —dBc
Input Return Loss
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =400mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL —–12 —dB
Output Power at 1 dB Gain Compression
(VDD =28V, POUT = 45 W CW, f = 1990 MHz, IDQ =400mA) P1dB —45 —W
Ruggedness
(VDD =28V, POUT =45W CW, IDQ = 400 mA, f = 1930 MHz, VSWR = 10:1
[all phase angles])
ΨNo degradation in output
power.
Agere Systems Inc. 3
Preliminary Data Sheet AGR19045E
November 2003 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19045E
A. Schematic
B. Component Layout
Parts List:
■Microstrip line: Z1, 0.320 in. x 0.067 in.; Z2, 0.185 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.430 in. x 0.160 in.; Z5, 0.120 in. x 0.675 in.;
Z6, 0.280 in. x 0.795 in.; Z7, 0.640 in. x 0.355 in.; Z8, 0.240 in. x 0.430 in.; Z9, 0.405 in. x 0.130 in.; Z10, 0.145 in. x 0.067 in.;
Z11, 0.275 in. x 0.067 in.; Z12, 0.260 in. x 0.067 in.; Z13, 0.520 in. x 0.030 in.; Z14, 0.365 in. x 0.050 in.
■ATC® B case chip capacitors: C5, C12, C22: 8.2 pF; C6, C20: 10 pF; C13: 1000 pF.
■Kemet® B case chip capacitors: C2, C16: 0.1 µF CDR33BX104AKWS. Tantalum capacitor: C17, 1 µF, 50 V, T491C.
■Vitramon® 1206: C4, C14: 22000 µF.
■Johanson Giga-Trim® variable capacitors C7, C21: 0.4 pF—2.5 pF.
■Murata® 0805: C3, C15: 0.01 µF, GRM40X7R103K100AL.
■Sprague® tantalum surface-mount chip capacitor: C1, C18, C19, C23: 22 µF, 35 V.
■Fair-Rite® ferrite bead: FB1: 2743019447.
■Fixed film chip resistor: R1: 12 Ω, 0.25 W, 0.08 x 0.13.
■PCB etched circuit boards.
■Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. AGR19045E Test Circuit
DUT
R1
C3 Z13
C6 Z3
Z1
C20
Z7 Z8 Z10 Z11
RF INPUT
VGG
VDD
RF
Z6
Z4
FB1
Z14
C4
C15
3
1
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
C23 C12 C14C13
C1 C2 C5
C22
Z2
C7
Z5
Z9 Z12
C21 OUTPUT
C19C16 C18C17
4Agere Systems Inc.
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor November 200 3
AGR19045E Preliminary Data Sheet
Typical Performance Characteristics
Note: ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
Figure 3. Series Equivalent Input and Output Impedances
MHz (f) ZS Ω
(Complex Source Impedance)
ZL Ω
(Complex Optimum Load Impedance)
1930 (f1) 2.02 – j5.22 5.30 – j3.20
1960 (f2) 1.84 – j4.90 5.14 – j3.16
1990 (f3) 1.67 – j4.60 4.96 – j3.06
0.1
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.9
0.9
1.0 1.0
1.2
1.2
1.4
1.4
1.6
1.6
1.8
1.8
2.0
2.0
3.0
3.0
4.0
4.0
5.0
5.0
10
10
10
20
20
20
50
50
50
0.2
0.2
0.2
0.4
0.4
0.4
0.6
0.6
0.6
0.8
0
.8
0.8
1.0
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.23
0.24
0.24
0.25
0.25
0.26
0.26
0.27
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.49
0.0
0.0
A
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RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZS
f3 f1
ZL
f1
f3
Z0 = 10 Ω
DUT
ZSZL
INPUT MATCH OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
Agere Systems Inc. 5
Preliminary Data Sheet AGR19045E
November 2003 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD 28 V, IDQ = 400 mA, f = 1960 MHz.
Figure 4. CW Output Power, Power Gain, and Drain Effic ienc y vs. Input Power
Test Conditions:
VDD 28 V, IDQ = 400 mA, f = 1990 MHz.
Channel spacing (channel bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz),
CDMA 9 channel forward carrier: pilot: 0, paging: 1, traffic 8 to 13, sync: 32.
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. Output Power
0
10
20
30
40
50
60
70
00.5 11.5 22.5 33.5 44.5
PIN (W CW)Z
η (%), POUT (W CW)Z
10
11
12
13
14
15
16
17
GPS (dB)Z
GPS
η
POUT
P1dB P3dB
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10 12 14 16 18 20 22 24 26
POUT (W) (A vg. N-CDM A) Z
GPS (dB),Zη (%)Z
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
ACPR (dBc)Z
η
GPS
885 k Hz
1. 25 M Hz
2. 25 M Hz
6Agere Systems Inc.
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor November 200 3
AGR19045E Preliminary Data Sheet
Typical Performance Characteristics (continued)
Test Conditions:
VDD 28 V, IDQ = 400 mA, f1 = 1960 MHz, f2 = 1962.5 MHz.
N-CDMA 9 channel forward carrier , channel spacing (channel bandwidth): 885 kHz (30 kHz),
(9.8 dB peak/avg. ratio @ 0.01% probability) (CCDF).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. Output Power
Test Conditions:
VDD 28 V, IDQ = 400 mA, f1 = 1960 MHz, f2 = 1962.5 MHz.
N-CDMA 9 channel forward carrier , channel spacing (channel bandwidth): 885 kHz (30 kHz),
(9.8 dB peak/avg. ratio @ 0.01% probability) (CCDF).
Figure 7. 2-Carrier N-CDMA, Power Gain vs. Output Power
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10 12 14 16 18 20
POUT (W) (A verage 2-Carri er N-CDM A)Z
GPS (dB), η (%)Z
-80
-70
-60
-50
-40
-30
-20
-10
0
IM3 (dBc), AC PR (dBc )Z
GPS
η
IM3
A
CPR
13
14
15
16
17
-6 -4 -2 0246810 12 14 16 18 20 22
POUT, O UTP UT P O WE R (W) (A verag e 2-Carri e r N-CDM A)Z
GPS, POWER GAIN (dB)z
IDQ = 300 m A
IDQ = 400 m A
IDQ = 500 m A
IDQ = 600 m A
Agere Systems Inc. 7
Preliminary Data Sheet AGR19045E
November 2003 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 V, f1 = 1960 MHz, f2 = 1962.5 MHz.
N-CDMA 9 channel forward carrier: pilot: 0, paging: 1, traffic: 8 to 13, sync: 32. 1.2288 MHz source channel BW,
channel spacing (BW) 885 kHz (30 kHz) (9.8 dB peak/avg. ratio @ 0.01% probability) (CCDF).
Figure 8. 2-Carrier N-CDMA ACPR vs. Output Power
Test Conditions:
VDD = 28 V, f1 = 1960 MHz, f2 = 1962.5 MHz.
N-CDMA 9 channel forward carrier: pilot: 0, paging: 1, traffic: 8 to 13, sync: 32. 1.2288 MHz source channel BW,
channel spacing (BW) 885 kHz (30 kHz) (9.8 dB peak/avg. ratio @ 0.01% probability) (CCDF).
Figure 9. 2-Carrier N-CDMA IM3 vs. Output Power
-70
-65
-60
-55
-50
-45
-40
-6 -4 -2 0246810 12 14 16 18 20
POUT (W) (A verage 2-Carrier N-CDM A )Z
ACPR (dBc)Z
IDQ = 300 m A
IDQ = 400 m A
IDQ = 500 m A
IDQ = 600 m A
-55
-50
-45
-40
-35
-30
-25
-20
-6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
POUT (W) (A verag e 2-Carri e r N-CDMA)Z
IM3 (dBc)Z
IDQ = 300 m A
IDQ = 400 m A
IDQ = 500 m A
IDQ = 600 m A
8Agere Systems Inc.
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor November 200 3
AGR19045E Preliminary Data Sheet
Typical Performance Characteristics (continued)
Test Conditions:
VDD 26 Vdc, IDQ = 350 mA, f = 1960 MHz.
Figure 10. CW Output Power, Power Gain, and Drain Effic iency vs. Input Power
Test Conditions:
VDD 26 Vdc, IDQ = 350 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Spectral Regrowth, RMS EVM Average, Power Gain, and Drain Efficiency vs. Output
Power
0
10
20
30
40
50
60
70
00.5 11.5 22.5 33.5 44.5
PIN (W CW)Z
η (%), POUT
(W CW)Z
10
11
12
13
14
15
16
17
GPS (dB)Z
GPS
POUT
η
P1dB P3dB
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
POUT (W) (A verag e GSM / EDGE )Z
GPS (dB), η (%),
RMS EVM AVERAGE (%) Z
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
GPS
η
400 k Hz
600 k Hz
RMS EVM Avg.
Agere Systems Inc. 9
Preliminary Data Sheet AGR19045E
November 2003 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR19045EU
AGR19045EF
Label Notes:
■M before the part number denotes model program. X before the part number denotes engineering prototype.
■YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok,
Thailand). XXXXX = five-digit wafer lot number.
■ZZZZZZZ = seven-digit assembly lot number on production parts.
■ZZZZZZZZZ ZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
AGERE
2
ZZZZZZZ
YYWWLL
AGR21045U
1
3
2
3
1
AGERE
AGR19045U
YYWWLL XXXXX
ZZZZZZZ
PINS:
1. DRAIN
2. GATE
3. SOURCE
AGERE
AGR21045F
YYWWLL
ZZZZZZZ
1
2
3
1
3
2
PINS:
1. DRA IN
2. GATE
3. SOURCE
AGERE
AGR19045F
YYWWLL XXXXX
ZZZZZZZ
Copyright © 2003 Agere Systems Inc.
All Rights Reserved
August 2003
DS02-378RFPP
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor November 200 3
AGR19045E Preliminary Data Sheet
Fair-Rite is a registered trademark of Fair-Rite Products Corporation.
ATC is a registered trademark of American Technical Ceramics Corp.
Kemet is a registered trademark of KRC Trade Corporation.
Sprague is a registered trademark of Sprague Electric Company Corporation.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
Murata is a registered trademark of Murata Electronics North America, Inc.
Vitramon is a registered trademark of Vitramon Incorporated.
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: docmaster@agere.com
N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610 - 712-41 06)
ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000, FAX (852) 3129-2020
CHINA: (86) 21-5 047-1212 (Shanghai), (86) 755-25881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-883 3, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE: Tel. (44) 1344 296 400
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
RF Power Product Information
For product and application information, please visit our website: http://www.agere.com/rfpower.