Preliminary Data Sheet
November 20 03
AGR19045E
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045E is a 45 W, 28 V N-channel laterally
diffused metal oxide s em ic onductor (LD M OS)
RF power fie ld effect tr ans is t or (F ET) suitable for
persona l co m munication s ervice (PCS) (1930 MHz—
1990 MHz), global system for m obile commu nic ation
(GSM/ED GE), time-divis ion multiple ac c es s (T D M A),
and single -c arrier or multica rrier class AB po w er
amplifier applications .
Figure 1. Available Packages
Features
■Typical EDGE performance,
1990 MHz, 26 V, IDQ = 350 mA:
— Output power (POUT): 15 W typ.
— Power gain: 14.5 dB.
— Efficiency: 34% typ.
— Spectral regrowth:
@ ±400 kHz = –63 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 1.60%.
■N-CDMA performance: 1990 MHz, 28 V,
IDQ = 400 mA, IS-95 CDMA pilot, sync, paging,
traffic codes 8—13 (9 channels):
— Output power (POUT): 4.5 W average.
— Power gain: 15.5 dB.
— Efficiency: 18.5%.
— Adjacent channel power:
885 kHz: –52 dBc @ 30 kHz bandwidth (BW).
1.25 MHz: –58 dBc @ 12.5 kHz BW.
2.25 MHz: –55 dBc @ 1 MHz BW.
■Typical performance over entire GSM band:
— P1dB: 45 W typ.
— Power gain: @ P1dB = 14.5 dB CW.
— Efficiency @ P1dB = 56% typ. CW.
— Return loss: –12 dB.
■High-reliability, gold-metalization process.
■Low hot carrier injection (HCI) induced bias drift
over 20 years.
■Best-in-class thermal resistance.
■Internally matched.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W continu-
ous wave (CW) output power.
■Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A 114B (HBM), JESD22-A 115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19045EU AGR19045EF
Parameter Sym Value Unit
Thermal Resi stance,
Junction to Case:
AGR19045EU
AGR19045EF RθJC
RθJC 1.5
1.5 °C/W
°C/W
Parameter Sym Value Unit
Drai n-sour ce V olt age VDSS 65 Vdc
Gate-source V oltage VGS –0.5, 15 Vdc
Total Dissipation at TC = 25 °C:
AGR19045EU
AGR19045EF PD
PD115
115 W
W
Derate Above 25 °C:
AGR19045EU
AGR19045EF —
—0.67
0.67 W/°C
W/°C
Operating Junction Tempera-
ture TJ200 °C
S tor age Tem peratu re Ra nge TSTG –65, 150 °C
AGR19045E Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4