Rev. A/AH
2008
06
12
MMBTA42
SMD High Voltage Transistor (NPN)
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of 3
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
MMBTA42
Symbol Description Min. Max. Unit Conditions
25 - VCE=10V, IC=1mA
40 - VCE=10V, IC=10mA hFE D.C. Current Gain
40 -
VCE=10V, IC=30mA
V(BR)CEO Collector-Emitter Breakdown Voltage 300 - V IC=1mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage 300 - V IC=100µA, IE=0
V(BR)EBO Emitter-Base Breakdown Voltage 6 - V IE=100µA, IC=0
VCE(sat) Collector-Emitter Saturation Voltage - 0.5 V IC=20mA, IB=2mA
VBE(sat) Base-Emitter Saturation Voltage - 0.9 V IC=20mA, IB=2mA
IEBO Collector-Emitter Cut-off Current - 0.1 μA VBE=6V, IC=0
ICBO Collector-Base Cut-off Current - 0.1 μA VCB=200V, IE=0
fT Current Gain-Bandwidth Product 50 - MHz VCE=20V, IC=10mA,
f=35MHz
Cre Feedback Capacitance - 3 pF
VCB=20V, IE=0,
f=1.0MHz,