13PD55-S
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a
metallized ceramic substrate, is intended for high speed and low noise applications in telecommunications
and data communications systems. Planar semiconductor design and dielectric passivation provide very
low noise performance. Reliability is assured by 100% purge burn-in (200°C, 15 hours, Vr = 20V). Chips
can also be attached and wire bonded to customer-supplied or other specified submounts.
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Frequency Response
Volts
nA
pF
A/W
ns
GHz
–30
2
0.5
0.5
0.05
0.3
0.9
4
0.8
–5V
–5V
1300nm
(–3dB)
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
35 Volts
10mA
5mA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS
High Speed InGaAs p-i-n Photodiode