Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1.0
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 0.6
IDM Pulsed Drain Current 4.0
PD @ TC = 25°C Max. Power Dissipation 1.4 W
Linear Derating Factor 0.011 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 75 mJ
IAR Avalanche Current —A
EAR Repetitive Avalanche Energy —mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)
Weight 1.3 (Typical) g
PD - 90396G
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, v ery fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited f or applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
oC
A
POWER MOSFET
THRU-HOLE (MO-036AB)
04/16/02
www.irf.com 1
MO-036AB
Product Summary
Part Number RDS(on) ID
IRFG110 0.7 1.0A
Features:
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nElectrically Isolated
nDynamic dv/dt Rating
n Light-weight
For footnotes refer to the last page
IRFG110
JANTX2N7334
JANTXV2N7334
REF:MIL-PRF-19500/597
100V, QUAD N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
IRFG110
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 1.0mA
BVDSS/TJTemperature Coefficient of Breakdown 0.13 V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State 0.7 VGS = 10V, ID = 0.6A
Resistance 0.8 VGS = 10V, ID = 1.0A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 0.86 S ( )V
DS > 15V, IDS = 0.6A
IDSS Zero Gate Voltage Drain Current 25 VDS= 80V ,VGS=0V
250 VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V
QgTotal Gate Charge 15 VGS =10V, ID = 1.0A
Qgs Gate-to-Source Charge 7.5 nC VDS = 50V
Qgd Gate-to-Drain (‘Miller’) Charge 7.5
td(on) Turn-On Delay Time 20 VDD = 50V, ID = 1.0A,
trRise Time 25 VGS =10V, RG = 7.5
td(off) Turn-Off Delay Time 40
tfFall Time 40
LS + LDTotal Inductance 10
Ciss Input Capacitance 180 VGS = 0V, VDS = 25V
Coss Output Capacitance 82 p F f = 1.0MHz
Crss Reverse Transfer Capacitance 15
nA
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case 17
RthJA Junction-to-Ambient 90 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) 1.0
ISM Pulse Source Current (Body Diode) 4.0
VSD Diode Forward Voltage 1. 5 V Tj = 25°C, IS = 1.0A, VGS = 0V
trr Reverse Recovery Time 200 nS Tj = 25°C, IF = 1.0A, di/dt 100A/µs
QRR Reverse Recovery Charge 0.83 µC VDD 50V
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
www.irf.com 3
IRFG110
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFG110
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13a & b
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IRFG110
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFG110
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
10
10
www.irf.com 7
IRFG110
ISD 1.0A, di/dt 75A/µs,
VDD 100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, star ting TJ = 25°C, L= 150mH
Peak IL = 1.0A, VGS = 10V
Footnotes:
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/02