BAR64... Silicon PIN Diode * High voltage current controlled RF resistor for RF attenuator and switches * Frequency range above 1 MHz up to 6 GHz * Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.17 pF) * Low forward resistance (typ. 2.1 @ 10 mA) * Very low signal distortion BAR64-02L BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W ! , ! , , Type BAR64-02L BAR64-02LRH* BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W BAR64-07 BAR64-06 BAR64-06W ! , Package TSLP-2-1 TSLP-2-7 SC79 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOD323 SOT143 BAR64-07 , " , , Configuration single, leadless single, leadless single single series series common cathode common cathode common anode common anode parallel pair ! , LS(nH) 0.4 0.4 0.6 1.8 1.8 1.4 1.8 1.4 1.8 1.4 2 Marking MM O O 2 blue PPs PPs PRs PRs PSs PSs PTs * Preliminary Data 1 Nov-23-2004 BAR64... Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 150 V Forward current IF 100 mA Total power dissipation Ptot Value Unit mW BAR64-02L, BAR64-02LRH, TS 135 C 250 BAR64-02V, TS 125 C 250 BAR64-03W, BAR64-07, TS 25 C 250 BAR64-04, -05, -06, TS 65 C 250 BAR64-04W, -05W, -06W, TS 115 C 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 C Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value BAR64-02L, BAR64-02LRH 60 BAR64-02V, -04W, -05W, -06W 140 BAR64-03W 370 BAR64-04, -05, -06 340 BAR64-07 290 Unit Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 150 - - - - 1.1 DC Characteristics V(BR) Breakdown voltage V I (BR) = 5 A VF Forward voltage I F = 50 mA 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Nov-23-2004 BAR64... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics pF CT Diode capacitance VR = 20 V, f = 1 MHz - 0.23 0.35 VR = 0 V, f = 100 MHz - 0.3 - VR = 0 V, f = 1...1.8 GHz, BAR64-02L/ -02LRH - 0.13 - VR = 0 V, f = 1...1.8 GHz, all other - 0.17 - RP Reverse parallel resistance k VR = 0 V, f = 100 MHz - 10 - VR = 0 V, f = 1 GHz - 4 - VR = 0 V, f = 1.8 GHz - 3 rf Forward resistance IF = 1 mA, f = 100 MHz - 12.5 20 IF = 10 mA, f = 100 MHz - 2.1 2.8 IF = 100 mA, f = 100 MHz - 0.85 1.35 rr - 1550 - ns I-region width WI - 50 - m Insertion loss1) |S21|2 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 dB IF = 3 mA, f = 1.8 GHz - -0.32 - IF = 5 mA, f = 1.8 GHz - -0.23 - IF = 10 mA, f = 1.8 GHz - -0.16 - VR = 0 V, f = 0.9 GHz - -22 - VR = 0 V, f = 1.8 GHz - -17 - VR = 0 V, f = 2.45 GHz - -14.5 - VR = 0 V, f = 5.6 GHz - -8.5 - Isolation1) 1BAR64-02L |S21|2 in series configuration, Z = 50 3 Nov-23-2004 BAR64... Diode capacitance CT = (VR) Reverse parallel resistance RP = (V R) f = Parameter f = Parameter 10 4 0.7 KOhm pF 10 3 Rp CT 0.5 1 MHz 100 MHz 1 GHz 1.8 GHz 0.4 100 MHz 1 GHz 1.8 GHz 10 2 10 1 0.3 10 0 0.2 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 5 10 15 20 25 V 30 VR 40 VR Forward resistance rf = (IF ) Forward current IF = (VF) f = 100MHz TA = Parameter 10 3 10 0 A Ohm 10 -1 10 2 IF RF 10 -2 10 1 10 -3 -40 C 25 C 85 C 125 C 10 -4 10 0 10 -5 10 -1 -2 10 10 -1 10 0 10 1 mA 10 10 -6 0 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 Nov-23-2004 BAR64... Intermodulation intercept point Forward current IF = (T S) IP3 = (IF); f = Parameter BAR64-02L, BAR64-02LRH 10 2 120 mA 100 f=900MHz 90 f=1800MHz IF IP 3 80 70 dBm 60 50 40 30 20 10 10 1 10 -1 10 0 mA 10 0 0 1 30 60 90 120 IF C 165 TS Forward current IF = (T S) Forward current IF = (T S) BAR64-02V BAR64-04, BAR64-06 120 120 mA mA 90 90 80 80 IF 100 IF 100 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 15 30 45 60 75 90 105 120 C 0 0 150 TS 15 30 45 60 75 90 105 120 C 150 TS 5 Nov-23-2004 BAR64... Permissible Puls Load RthJS = (tp) Permissible Pulse Load BAR64-02L, BAR64-02LRH IFmax / I FDC = (t p) BAR64-02L, BAR64-02LRH 10 10 2 2 I Fmax/IFDC RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tp 10 0 tp Permissible Puls Load RthJS = (tp) Permissible Pulse Load BAR64-02V IFmax / I FDC = (t p) BAR64-02V 10 3 10 2 IFmax / IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 tp 6 Nov-23-2004 BAR64... Permissible Puls Load RthJS = (tp) Permissible Pulse Load BAR64-04, BAR64-06 IFmax / I FDC = (t p) BAR64-04, BAR64-06 10 3 10 2 I Fmax/IFDC K/W RthJS 10 2 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 - s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tP 10 0 tP Permissible Puls Load RthJS = (tp) Permissible Pulse Load BAR64-04W, BAR64-06W IFmax / I FDC = (t p) BAR64-04W, BAR64-06W 10 3 10 2 IFmax/IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tP 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 tP 7 Nov-23-2004 BAR64... Insertion loss |S21|2 = (f) Isolation |S21|2 = (f) IF = Parameter VR = Parameter BAR64-02L in series configuration, Z = 50 BAR64-02L in series configuration, Z = 50 0 0 dB dB 100 mA |S 21| 2 |S 21| 2 -0.1 10 mA -0.15 -0.2 -10 -15 5 mA -0.25 -20 3 mA -0.3 -25 -0.35 -0.4 0 1 2 3 4 GHz -30 0.5 6 f 0V 1V 10 V 1.5 2.5 3.5 4.5 GHz 6.5 f 8 Nov-23-2004 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.