BAR6407E6327 - Infineon Technologies

Nov-23-2004

1

BAR64...

Silicon PIN Diode

• High voltage current controlled RF resistor

for RF attenuator and switches

• Frequency range above 1 MHz up to 6 GHz

• Very low capacitance at zero volt reverse bias

at frequencies above 1 GHz (typ. 0.17 pF)

• Low forward resistance (typ. 2.1 Ω @ 10 mA)

• Very low signal distortion

BAR64-02L

BAR64-02LRH

BAR64-02V

BAR64-03W

BAR64-07BAR64-04

BAR64-04W BAR64-06

BAR64-06W

BAR64-05

BAR64-05W

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Type Package Configuration L

S

(nH) Marking

BAR64-02L

BAR64-02LRH*

BAR64-02V

BAR64-03W

BAR64-04

BAR64-04W

BAR64-05

BAR64-05W

BAR64-06

BAR64-06W

BAR64-07

TSLP-2-1

TSLP-2-7

SC79

SOD323

SOT23

SOT323

SOT23

SOT323

SOT23

SOD323

SOT143

single, leadless

single

series

common cathode

common anode

parallel pair

0.4

0.6

1.8

1.4

1.8

1.4

1.8

1.4

2

MM

O

2 blue

PPs

PRs

PSs

PTs

* Preliminary Data

Nov-23-2004

2

BAR64...

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter Symbol Value Unit

Diode reverse voltage VR150 V

Forward current IF100 mA

Total power dissipation

BAR64-02L, BAR64-02LRH, TS ≤ 135 °C

BAR64-02V, TS ≤ 125 °C

BAR64-03W, BAR64-07, TS ≤ 25 °C

BAR64-04, -05, -06, TS ≤ 65 °C

BAR64-04W, -05W, -06W, TS ≤ 115 °C

Ptot

250

mW

Junction temperature Tj150 °C

Operating temperature range Top -55 ... 125

Storage temperature Tstg -55 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1)

BAR64-02L, BAR64-02LRH

BAR64-02V, -04W, -05W, -06W

BAR64-03W

BAR64-04, -05, -06

BAR64-07

RthJS

≤ 60

≤ 140

≤ 370

≤ 340

≤ 290

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Breakdown voltage

I(BR) = 5 µA V(BR) 150 - - V

Forward voltage

IF = 50 mA VF- - 1.1

1For calculation of RthJA please refer to Application Note Thermal Resistance

Nov-23-2004

3

BAR64...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Diode capacitance

VR = 20 V, f = 1 MHz

VR = 0 V, f = 100 MHz

VR = 0 V, f = 1...1.8 GHz, BAR64-02L/ -02LRH

VR = 0 V, f = 1...1.8 GHz, all other

CT

-

0.23

0.3

0.13

0.17

0.35

-

pF

Reverse parallel resistance

VR = 0 V, f = 100 MHz

VR = 0 V, f = 1 GHz

VR = 0 V, f = 1.8 GHz

RP

-

10

4

3

-

kΩ

Forward resistance

IF = 1 mA, f = 100 MHz

IF = 10 mA, f = 100 MHz

IF = 100 mA, f = 100 MHz

rf

-

12.5

2.1

0.85

20

2.8

1.35

Ω

Charge carrier life time

IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,

RL = 100 Ω

τ rr - 1550 - ns

I-region width WI- 50 - µm

Insertion loss1)

IF = 3 mA, f = 1.8 GHz

IF = 5 mA, f = 1.8 GHz

IF = 10 mA, f = 1.8 GHz

|S21|2

-

-0.32

-0.23

-0.16

-

dB

Isolation1)

VR = 0 V, f = 0.9 GHz

VR = 0 V, f = 1.8 GHz

VR = 0 V, f = 2.45 GHz

VR = 0 V, f = 5.6 GHz

|S21|2

-

-22

-17

-14.5

-8.5

-

1BAR64-02L in series configuration, Z = 50 Ω

Nov-23-2004

4

BAR64...

Diode capacitance CT = ƒ (VR)

f = Parameter

0 2 4 6 8 10 12 14 16 V20

VR

0.1

0.2

0.3

0.4

0.5

pF

0.7

CT

1 MHz

100 MHz

1 GHz

1.8 GHz

Reverse parallel resistance RP = ƒ(VR)

f = Parameter

0 5 10 15 20 25 30 V40

VR

-1

10

0

10

1

10

2

10

3

10

4

10

KOhm

Rp

100 MHz

1 GHz

1.8 GHz

Forward resistance rf = ƒ (IF)

f = 100MHz

10 -2 10 -1 10 0 10 1 10 2

mA

IF

-1

10

0

10

1

10

2

10

3

10

Ohm

RF

Forward current IF = ƒ (VF)

TA = Parameter

0 0.2 0.4 0.6 0.8 V1.2

VF

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

A

IF

-40 °C

25 °C

85 °C

125 °C

Nov-23-2004

5

BAR64...

Intermodulation intercept point

IP3 = ƒ (IF); f = Parameter

10 -1 10 0 10 1

mA IF

1

10

2

10

dBm

IP3

f=1800MHz

f=900MHz

Forward current IF = ƒ (TS)

BAR64-02L, BAR64-02LRH

0 30 60 90 120 °C 165

TS

0

10

20

30

40

50

60

70

80

90

100

mA

120

IF

Forward current IF = ƒ (TS)

BAR64-02V

0 15 30 45 60 75 90 105 120 °C 150

TS

0

10

20

30

40

50

60

70

80

90

100

mA

120

IF

Forward current IF = ƒ (TS)

BAR64-04, BAR64-06

0 15 30 45 60 75 90 105 120 °C 150

TS

0

10

20

30

40

50

60

70

80

90

100

mA

120

IF

Nov-23-2004

6

BAR64...

Permissible Puls Load RthJS = ƒ (tp)

BAR64-02L, BAR64-02LRH

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

stp

-1

10

0

10

1

10

2

10

K/W

RthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

IFmax/ IFDC = ƒ (tp)

BAR64-02L, BAR64-02LRH

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

stp

0

10

1

10

2

10

-

IFmax/IFDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Permissible Puls Load RthJS = ƒ (tp)

BAR64-02V

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s tp

-1

10

0

10

1

10

2

10

3

10

K/W

RthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

IFmax/ IFDC = ƒ (tp)

BAR64-02V

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1

s

tp

0

10

1

10

2

10

-

IFmax / IFDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Nov-23-2004

7

BAR64...

Permissible Puls Load RthJS = ƒ (tp)

BAR64-04, BAR64-06

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

stP

-1

10

0

10

1

10

2

10

3

10

K/W

RthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

IFmax/ IFDC = ƒ (tp)

BAR64-04, BAR64-06

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

stP

0

10

1

10

2

10

-

IFmax/IFDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Permissible Puls Load RthJS = ƒ (tp)

BAR64-04W, BAR64-06W

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s tP

-1

10

0

10

1

10

2

10

3

10

K/W

RthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

IFmax/ IFDC = ƒ (tp)

BAR64-04W, BAR64-06W

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1

s

tP

0

10

1

10

2

10

-

IFmax/IFDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Nov-23-2004

8

BAR64...

Insertion loss |S21|2 = ƒ(f)

IF = Parameter

BAR64-02L in series configuration, Z = 50Ω

01234GHz 6

f

-0.4

-0.35

-0.3

-0.25

-0.2

-0.15

-0.1

dB

0

|S21|2

3 mA

5 mA

10 mA

100 mA

Isolation |S21|2 = ƒ(f)

VR = Parameter

BAR64-02L in series configuration, Z = 50Ω

0.5 1.5 2.5 3.5 4.5 GHz 6.5

f

-30

-25

-20

-15

-10

dB

0

|S21|2

0 V

1 V

10 V

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

81669 München

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding

circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.Infineon.com).

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Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

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approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

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