LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 94
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC619
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
v01.0308
General Description
Features
Functional Diagram
The HMC619 is a GaAs MMIC PHEMT Distributed
Power Ampli er die which operates between DC and
10 GHz. The ampli er provides 12 dB of gain,
+37 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 300 mA
from a +12V supply. Gain atness is excellent at ±0.4
dB from DC to 7 GHz making the HMC619 ideal for
EW, ECM, Radar and test equipment applications.
The HMC619 ampli er I/Os are internally matched
to 50 ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of mini-
mal length 0.31 mm (12 mils).
P1dB Output Power: +28 dBm
Gain: 12 dB
Output IP3: +37 dBm
Supply Voltage: +12V @ 300 mA
50 Ohm Matched Input/Output
Die Size: 3.38 x 2.05 x 0.1 mm
Typical Applications
The HMC619 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Electrical Speci cations, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 3 3 - 7 7 - 10 GHz
Gain 9.8 12.8 9.0 12 8.5 11.5 dB
Gain Flatness ±0.3 ±0.3 ±0.4 dB
Gain Variation Over Temperature 0.014 0.016 0.023 dB/ °C
Input Return Loss 12.5 12.5 13.5 dB
Output Return Loss 21 25 17 dB
Output Power for 1 dB Compression (P1dB) 25.5 28 25 27.5 24 26.5 dBm
Saturated Output Power (Psat) 28.5 28 27.5 dBm
Output Third Order Intercept (IP3) 42 40 37 dBm
Noise Figure 4 5 7 dB
Supply Current
(Idd) (Vdd= 12V Typ.) 300 300 300 mA
* Adjust Vgg1 between -2V to 0V to achieve Idd= 300 mA typical.
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 95
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
-30
-25
-20
-15
-10
-5
0
5
10
15
20
024681012
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
024681012
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
024681012
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
024681012
+25C
+85C
-55C
ISOLATION (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
024681012
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
0
3
6
9
12
15
012345678910
+25C
+85C
-55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 96
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output IP3 vs. Output Power @ 5 GHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Output IP3 vs.
Supply Voltage @ 5 GHz, Fixed Vgg
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
20
22
24
26
28
30
32
012345678910
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
012345678910
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
11.5 12 12.5
Gain
P1dB
Psat
OIP3
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Vdd (V)
30
35
40
45
50
0 3 6 9 12 15 18 21 24 27
11.5V
12V
12.5V
IP3 (dBm)
OUTPUT POWER (dBm)
20
25
30
35
40
45
024681012
+25C
+85C
-55C
IP3 (dBm)
FREQUENCY (GHz)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 97
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +13 Vdc
Gate Bias Voltage (Vgg1) -2.5 to 0 Vdc
Gate Bias Voltage (Vgg2) +4V to +6V
RF Input Power (RFIN)(Vdd = +10 Vdc) +27 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 98 mW/°C above 85 °C) 6.37 W
Thermal Resistance
(channel to die bottom) 10.2 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (V) Idd (mA)
+11.5 29 9
+12.0 3 00
+12. 5 301
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Power Compression @ 10 GHz Power Dissipation
Power Compression @ 2 GHz Power Compression @ 5 GHz
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
0
4
8
12
16
20
24
28
32
-10 -5 0 5 10 15 20
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
3
4
5
6
7
8
9
10
-10 -5 0 5 10 15 20
Max Pdis @ 85C
2 GHz
6 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
0
4
8
12
16
20
24
28
32
-10 -5 0 5 10 15 20
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
24
28
32
-10 -5 0 5 10 15 20
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 98
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 99
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1IN This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2Vgg2
Gate control 2 for ampli er. Attach bypass
capacitor per application circuit herein. For nominal
operation +5V should be applied to Vgg2.
3ACG1 Low frequency termination. Attach bypass
capacitor per application circuit herein.
4ACG2 Low frequency termination. Attach bypass
capacitor per application circuit herein.
5 OUT & Vdd RF output for ampli er. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6, 7 ACG3, ACG4 Low frequency termination. Attach bypass
capacitor per application circuit herein.
8Vgg1
Gate control 1 for ampli er. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Ampli er Biasing Procedure”
application note.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 100
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 500mA
Assembly Diagram
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 101
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC619
v01.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
