UF1005F - Won-Top Electronics

UF1000F – UF1008F

10A ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER

Features

! Glass Passivated Die Construction B

! Ultra-Fast Switching

! High Current Capability C

! Low Reverse Leakage Current

! High Surge Current Capability G A

! Plastic Material has UL Flammability

Classification 94V-O PIN1 2

D

Mechanical Data F E

! Case: ITO-220A Full Molded Plastic

! Terminals: Plated Leads Solderable per P

MIL-STD- 202, Met hod 208

! Polarity: See Diagram I

! Weight: 2.24 grams (approx.) L

! Mounting Position: Any H

! Marking: Type Number

PIN 1 +

J PIN 2 -

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capaciti ve load, derate current by 20%.

Characteristic Symbol UF

1000F UF

1001F UF

1002F UF

1003F UF

1004F UF

1006F UF

1008F Unit

Peak Repetit i ve Revers e Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR50 100 200 300 400 600 800 V

RMS Reverse Voltage VR(RMS) 35 70 140 210 280 420 560 V

Average Rectified Output Current @TC = 100°C IO10 A

Non-Repetiti ve P eak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method) IFSM 150 A

Forward Voltage @IF = 10A VFM 1.0 1.3 1.7 V

Peak Reverse Current @T

A = 25°C

At Rated DC Blocking Voltage @TA = 125°C IRM 10

500 µA

Reverse Recovery Time (Note 1) trr 50 100 nS

Typi cal Junction Capacitanc e (Note 2) Cj80 50 pF

Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

WTE

POWER SEMICONDUCTORS

ITO-220A

Dim Min Max

A14.9 15.1

B— 10.5

C2.62 2.87

D3.56 4.06

E13.46 14.22

F0.68 0.94

G3.74Ø 3.91Ø

H5.84 6.86

I4.44 4.70

J2.54 2.79

K0.35 0.64

L1.14 1.40

P4.95 5.20

All Dimensions in mm

120

150

180

1 10 100

I , PEAK FORWARD SURGE CURRENT (A)

FSM

NUMBER OF CYCLES AT 60Hz

Fig. 3 Max Non-Repetitive Surge Current

8.3 ms single half-sine-wave

JEDEC method

100

400

0.1 1.0 10 100

V , REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

1006F -1008F

1000F -1004F

C , CAPACITANCE (pF)

0 50 100 150

I,AVERAGEFORWARDCURRENT(A)

(AV)

T , CASE TEMPERATURE ( C)

Fig. 1 Forward Current Derating Curve

C°

0.1

1.0

100

0.2 0.6 1.0 1.4

I , INSTANTANEOUS FORWARD CURRENT (A)

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

Pulse width = 300 s

2% duty cycle µ

1006F -1008F

1003F - 1004F

1000F -1002F