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Doc. No. 5SYA 1623-00 Nov 03
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Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1200 V
DC collector current IC150 A
Peak collector current ICM Limited by Tvjmax 300 A
Gate-emitter voltage VGES -20 20 V
IGBT short circuit SOA tpsc VCC = 900 V , V CEM ≤ 1200 V
VGE ≤ 15 V, Tvj ≤ 125 ° C 10 µs
Junction temperature Tvj -40 150 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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Doc. No. 5SYA 1623-00 Nov 03 page 2 of 5
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Collector (-emitter)
break down voltage V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C 1200 V
Tvj = 25 °C 1.9 2.15 2.4 V
Collector-emitter
saturation vo lta ge VCE sat IC = 150 A, VGE = 15 V Tvj = 125 °C2.4 V
Tvj = 25 °C 100 µA
Collecto r cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 125 °C 500 µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C-200 200 nA
Gate-emitter threshold voltage VGE(TO) IC = 6 mA, VCE = VGE, Tvj = 25 °C4.56.5V
Gate charge Qge IC = 150 A, VCE = 600 V, VGE = -15 ..15 V 1110 nC
Input capacitance Cies 10.9
Output capacitance Coes 0.72
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C0.46 nF
Internal gate resistance RGint 3Ω
Tvj = 25 °C 170
Turn-on delay time td(on) Tvj = 125 °C 200 ns
Tvj = 25 °C75
Rise time tr
VCC = 600 V, IC = 150 A,
RG = 8.2 Ω, VGE = ±15 V,
Lσ = 60 nH,
induct ive loa d Tvj = 125 °C85 ns
Tvj = 25 °C 410
Turn-off delay time td(off) Tvj = 125 °C 510 ns
Tvj = 25 °C50
Fall time tf
VCC = 600 V, IC = 150 A,
RG = 8.2 Ω, VGE = ±15 V,
Lσ = 60 nH,
induct ive loa d Tvj = 125 °C60 ns
Tvj = 25 °C14
Turn-on switching energy Eon
VCC = 600 V, IC = 150 A,
VGE = ±15 V, R G = 8.2 Ω,
Lσ = 60 nH,
induct ive loa d,
FWD: 150A 1200V MPS
Diode Tvj = 125 °C21
mJ
Tvj = 25 °C10
Turn-off switching energy Eoff
VCC = 600 V, IC = 150 A,
VGE = ±15 V, R G = 8.2 Ω,
Lσ = 60 nH,
induct ive loa d Tvj = 125 °C15mJ
Short circuit current ISC tpsc  V9GE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM 9 670 A
2) Maximum rated and characteristic values according to IEC 60747-9
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Doc. No. 5SYA 1623-00 Nov 03 page 3 of 5
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Overall die L x W 13.6 x 13.6 mm
exposed
front metal L x W (except gate pad) 12.0 x 12.0 mm
gate pad L x W 1.19 x 1.19 mm
Dimensions
thickness 130 ± 20 µm
front (E) AISi1 4 µm
Metalli zat ion 3) back (C) AI / Ti / Ni / Ag 1.8 µm
3) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA20 33-01 Apr il 02.
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Doc. No. 5SYA 1623-00 Nov 03 page 4 of 5
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01234
VCE [V]
I
C
[A]
VGE = 15 V
125 °C
25 °C
0
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50
75
100
125
150
175
200
0123456789101112
VGE [V]
I
C
[A]
VCE = 20 V
125 °C
25 °C
)LJ Ty pical onstate characteristics )LJ Ty pical transfer characteristics
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IC [A]
E
on
, E
off
[J]
VCC = 600 V
RG = 8.2 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
Eon
Eoff
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RG [ohm]
E
on
. E
off
[J]
VCC = 600 V
IC = 150 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
Eon
Eoff
)LJ Typical switching characteristics vs
collector curren t )LJ Typical switching characteristics vs
gate resistor
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
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$%%6ZLW]HUODQG/WG Doc. No. 5SYA 1623-00 Nov 03
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Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Telepho ne +41 (0)58 586 141 9
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
0
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15
20
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Qg [µC]
V
GE
[V]
VCC = 600 V
VCC = 800 V
IC = 150 A
Tvj = 25 °C
0.1
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
)LJ Ty pical gate charge characteristics )LJ Typical capacitances vs
collector-emitter voltage