Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G300SH6NE
May. 2009
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Description
DA WIN ’ S I G B T 7DM-2 Package dev ices are opt imized t o reduce losses
and swit ching noise in high f requency power conditioning electr ica l sy st ems.
These I G BT modules are ideally suited for power inverters, motors drives
and ot her applications w here swit ching losses are s ignif icant portion of the
t ot a l losses.
Features
☞High Speed Switching
☞BVCES = 600V
☞Low Conduct ion Loss : VCE(sat) = 2.1 V (ty p.)
☞Fast & Soft Ant i-Paral lel FWD
☞Short circu it rated : Min. 10uS at TC=100℃
☞Reduced EM I and R FI
☞I solation Ty pe Package
Applications
Mot or Drives, High Power Inverters, Welding Machine, I nduction He ating,
UP S , CVC F, R obot ics , Servo Cont rols, High Speed SMP S
Absolu te M axi mu m Ratin g s@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
1/7
Equiv alent Circu it
E qu ival en t Ci r cuit and Packag e
Package : 7DM-2 Series
Please see the package out line inf ormat ion
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
TL
C o llec tor-E mitt e r V o lta g e
Gat e-Emitter Voltage
Collect or Current
Pulsed Collector Current
Diode Cont inuous Forward Current
Diode Maximum Forward Current
Short C ircuit Wit hst and T ime
Maximum Power Dissipation
Operat ing Junction Temperature
St orage Temperature Range
I solation Volt age
Maximum Lead Temp. for soldering
Purposes, 1/8”f rom case f or 9 seconds
Mount ing screw Torque :M6
Power terminals screw Torque :M5
600
±20
375
300
600
300
600
10
833
-40 ~ 150
-40 ~ 125
2500
260
4.0
2.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
℃
N.m
N.m
-
-
Tc = 25℃
Tc = 80℃
-
Tc = 80℃
-
Tc = 100℃
Tc = 25℃
-
-
AC 1 minute
-
-
High Power Lugge d Type IGBT Module
6
7
5
4
①②③
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G300SH6NE
May. 2009
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
2/7
E l ectr ical Char acteristi cs o f IGBT @ TC=25℃(unless otherwise specified)
Symbol Parameter Values Unit
Conditions Min. Typ. Max.
C - E B reakdown V oltage
Temperat ure Coeff. of
Breakdown Voltage
G - E t hreshold volt age
Colle ctor cutoff Current
G - E leakage Current
Colle ctor to Emitter
sat uration v oltage
Turn on delay time
Tu rn o n ris e time
Turn off delay tim e
Turn off fall time
Turn on Swit ching Loss
Turn off Switching Loss
Tot al Switching Loss
Short C ircuit Wit hst and T ime
Tot al Gat e Charge
Gat e-Emitter Charge
Gate-Collect or Charge
600
-
5.0
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
6.5
-
-
2.1
2.4
140
150
180
140
8.5
15
23.5
-
990
210
350
-
-
8.5
250
±100
2.9
-
-
-
-
240
-
-
-
-
-
-
-
V
V/℃
V
uA
nA
V
V
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC= 250uA
VGE = 0V , IC= 1.0m A
IC= 300mA , VCE = VGE
VCE = 600V , VGE = 0V
VGE =±20V
IC=300A, VGE=15V @TC= 25 ℃
IC=300A, VGE=15V @TC=100℃
VCC = 300V , IC=300A
VGE = ±15V
RG= 2.1 Ω
I nduct iv e Load, @ TC = 25℃
VCC = 300V, VGE = ±15V
@TC= 100℃
VCC = 300V
VGE =±15V
IC= 300A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
td(on)
tr
td(off )
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G300SH6NE
May. 2009
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
3/7
E l ectr ical Char acteristi cs o f F RD @ TC=25℃(unless ot herwise specif ied )
Symbol Parameter Values UnitConditions Min. Typ. Max.
IF=300A
IF= 300A, VR=300V
di/ dt= -600A/ uS
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Diode Forw ard Voltage
Diode Reverse
Recov ery Time
Diode Peak Reverse
Rec over y Cur r e nt
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
1.8
1.9
120
140
40
47
-
-
2.2
-
140
-
45
-
-
-
V
nS
A
nC
Th ermal Character i stics and Wei g h t
Symbol Parameter Values UnitConditions Min. Typ. Max.
Junct ion-t o-Case(IG BT Part , Pe r 1/2 M odule)
Junct ion-t o-Case(DI O DE Part , Per 1/2 Module)
Case-t o-Sink ( Conduct iv e grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.15
0.25
-
250
-
-
0.04
-
RθJC
RθJC
RθCS
Weight
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G300SH6NE
May. 2009
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
0
5
10
15
20
0 5 10 15 20
0
4
8
12
16
20
0 5 10 15 20
0
100
200
300
400
500
600
01234
0
100
200
300
400
500
600
012345
0
100
200
300
400
500
600
012345
0
100
200
300
400
500
600
0.1 1 10 100
P erfor m an ce Cur ves
C ommon E mitte r
TC=25℃20V 15V
C ommon E mitte r
TC=125℃
TC=125℃
TC=25℃
Du ty cycle = 5 0%
TC=125℃
Power Dissipation = 400W
12V
VGE=10V
Collect or – Emitt er Voltage, VCE(sat) [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE(sat) [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE(sat) [V]
Coll e c to r Curr ent, I C[A]
Frequen cy [KHz]
Load Cu r r ent [A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage
characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
20V 15V 12V
VGE=10V
C ommon E mitte r
TC=25℃C ommon E mitte r
TC=125℃
400A
300A
IC=200A
400A
IC=200A
300A
Gate – Emitter Voltage, VGE [V]
Collect or – Emitt er Voltage, VCE(sat) [V]
Collect or – Emitt er Voltage, VCE(sat) [V]
Gate – Emitter Voltage, VGE [V]
4/7
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G300SH6NE
May. 2009
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
0
50 0
1000
1500
2000
2500
3000
3500
0 100 20 0 300 400 500 600 700
0
50
100
150
200
250
300
350
400
450
500
0 20 40 60 80 100 120 140 160
0
3
6
9
12
15
0 2 00 4 00 600 800 1000 1200
0.001
0.01
0. 1
1
1.E-05 2.E-01 4.E-01 6.E-01 8.E-01 1.E+00
Gate Charge, Qg [nC]
Gate – Emitter Voltage, VGE [V]
C ommon E mitte r
IC=300A
TC=25℃
Rectangular Pulse Du ration Time [sec]
Therma l Response Zt hjc [ /W ]
℃
Fig 7. Capacitance characteristics Fig 8. Transient Thermal Impedance
VCC=300V
IGBT :
DIODE :
TC=25℃
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Fig 9. RBSOA characteristics Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Fig 10. SCSOA characteristics
Fig12. rated Current vs. Case Temperature
Case Temperature, Tc [ ℃]
C o lle c to r C u rrent , Ic [A ]
TJ≤150℃
VGE ≥15V
Fig 11. SOA Characteristic
0.1
1
10
100
1000
0.1 1 10 100 1000
Coll e c to r Curr ent, I C[A]
Collect or-Emit t er Voltage, VCE [V]
I c M A X. ( P ulsed)
I c M A X. ( Continuous)
Single N on-re petitive
Pulse Tc= 25℃
Curves must be derated
linerarly with increase
In temperature
DC Oper at ion
1ms
100us
50us
1
10
10 0
100 0
0 100 200 300 400 500 600 700
5/7
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G300SH6NE
May. 2009
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
0
200
400
600
01234
0
100
200
300
400
500
600
700
800
900
1000
0 20 40 60 80 100 120 140 160
Fig 13. Power Dissipation vs. Case Temperature Fig 14. Forward characteristics
Case T emper ature, T c [ ℃]
Power Dis s ip a tion, PD[ W ]
TJ= 150℃
VGE ≥15V
Forwar d Drop Voltage, VF[V]
F orwa rd C urrent, IF[A]
TC=125℃
TC=25℃
6/7
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G300SH6NE
May. 2009
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
P ackage Ou t L ine In for mati o n
7DM-2
7/7
