CM600HU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMODTM 600 Amperes/600 Volts M (2 TYP.) N (2 TYP) A D G C E F P G CL E E CM B H J Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. K R TC MEASURING POINT L (4 TYP) C Q Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking E C RTC E G Applications: AC Motor Control UPS Battery Powered Supplies Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.21 107.0 J 1.02 2.44 62.0 K 1.14 L 0.26 Dia. 6.5 Dia. B C 1.34 +0.04/-0.02 34.0 +1.0/-0.5 Millimeters 26.0 29.0 D 3.660.01 93.00.25 M M8 M8 E 1.880.01 48.00.25 N M4 M4 F 0.37 P 0.49 12.55 9.5 G 0.39 10.0 Q H 0.53 13.5 R 1.02 +0.04/-0.02 26.0 +1.0/-0.5 0.81 20.5 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600HU-12F is a 600V (VCES), 600 Ampere Dual IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 600 12 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-12F Trench Gate Design Single IGBTMODTM 600 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Symbol CM600HU-12F Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 600 Amperes ICM 1200* Amperes Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) IE 600 Amperes Peak Emitter Current** IEM 1200* Amperes Maximum Collector Dissipation (Tc = 25C) Pc 1420 Watts Mounting Torque, M8 Main Terminal - 95 in-lb Mounting Torque, M6 Mounting - 40 in-lb Mounting Torque, M4 Terminal - 15 in-lb - 450 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions ICES VCE = VCES, VGE = 0V Min. Typ. Max. - - 1 mA IGES VGE = VGES, VCE = 0V - - 80 A Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25C - 1.6 2.2 Volts IC = 600A, VGE = 15V, Tj = 125C - 1.6 - Volts Gate Leakage Current Total Gate Charge QG VCC = 300V, IC = 600A, VGE = 15V - 3720 Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V - - * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Units - 2.6 nC Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-12F Trench Gate Design Single IGBTMODTM 600 Amperes/600 Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions Min. Typ. Max. Units - - 160 nf VCE = 10V, VGE = 0V - - 11 nf - - 6 nf - - 600 ns Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) VCC = 300V, IC = 600A, Load Rise Time tr VGE1 = VGE2 = 15V, - - 400 ns Switch Turn-off Delay Time td(off) RG = 3.1, - - 900 ns Times Fall Time tf Inductive Load - - 250 ns Diode Reverse Recovery Time** trr Switching Operation - - 300 ns Diode Reverse Recovery Charge** Qrr IE = 600A - 11.7 - C Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT, Tc Reference Thermal Resistance, Junction to Case Rth(j-c)D Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT, Rth(c-f) Per Module, Thermal Grease Applied Min. - Units 0.088 C/W 0.12 C/W Point per Outline Drawing Per FWDi, Tc Reference - - - 0.04 - 0.02 Point per Outline Drawing C/W Tc Reference Point Under Chip Contact Thermal Resistance - C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-12F Trench Gate Design Single IGBTMODTM 600 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 1000 10 3 9.5 VGE = 20V 800 9 600 8.5 400 8 200 7.5 0 0 1 2 3 VGE = 15V Tj = 25C Tj = 125C 2 1 0 4 3 IC = 1200A 2 IC = 600A IC = 240A 1 200 400 600 800 0 1000 1200 6 8 10 12 14 16 18 20 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 td(off) 102 102 0 1.0 2.0 3.0 101 100 101 GATE CHARGE, VGE 102 Irr 101 101 VCC = 300V VGE = 15V RG = 3.1 Tj = 25C Inductive Load 102 EMITTER CURRENT, IE, (AMPERES) 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) trr REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 tr IC = 600A 16 VCC = 200V VCC = 300V 12 101 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 102 VCC = 300V VGE = 15V RG = 3.1 Tj = 125C Inductive Load Cres EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 103 tf Coes 100 10-1 4.0 SWITCHING TIME, (ns) 103 td(on) Cies 8 4 102 103 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25C 101 REVERSE RECOVERY TIME, trr, (ns) 4 0 0 VGE = 0V 4 Tj = 25C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 EMITTER CURRENT, IE, (AMPERES) 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 11 15 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 0 0 1000 2000 3000 4000 GATE CHARGE, QG, (nC) 5000 101 Per Unit Base Rth(j-c) = 0.088C/W (IGBT) Rth(j-c) = 0.12C/W (FWDi) Single Pulse TC = 25C 10-5 TIME, (s) 10-4 10-3 10-3