1
Trench Gate Design
Single IGBTMOD™
600 Amperes / 600 Volts
CM600HU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A4.21 107.0
B2.44 62.0
C1.34 +0.04/-0.02 34.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F0.37 9.5
G0.39 10.0
H0.53 13.5
Dimensions Inches Millimeters
J1.02 26.0
K1.14 29.0
L0.26 Dia. 6.5 Dia.
MM8 M8
NM4 M4
P0.49 12.55
Q1.02 +0.04/-0.02 26.0 +1.0/-0.5
R0.81 20.5
1
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
ther mal management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recover y
Free-Wheel Diode
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□UPS
□Batter y Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600HU-12F is a
600V (VCES), 600 Ampere Dual
IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 600 12
A
D
Q
L (4 TYP)
CM
C
L
C
M (2 TYP.)
H J K
B
E
N (2 TYP)
C
E
G
E
F
GP
R
G
E
EC
RTC
TC MEASURING
POINT
2
CM600HU-12F
Trench Gate Design Single IGBTMOD™
600 Amperes / 600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM600HU-12F Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC600 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 1200* Amperes
Emitter Current** (Tc = 25°C) IE600 Amperes
Peak Emitter Current** IEM 1200* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc1420 Watts
Mounting Torque, M8 Main Ter minal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Mounting Torque, M4 Terminal – 15 in-lb
Weight –450 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) Viso 2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 80 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, T j = 25°C– 1.6 2.2 Volts
IC = 600A, VGE = 15V, Tj = 125°C– 1.6 – Volts
Total Gate Charge QGVCC = 300V, IC = 600A, VGE = 15V – 3720 – nC
Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V – – 2.6 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
3
CM600HU-12F
Trench Gate Design Single IGBTMOD™
600 Amperes / 600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies ––160 nf
Output Capacitance Coes VCE = 10V, VGE = 0V – – 11 nf
Re v erse Transf er Capacitance Cres ––6nf
Inductive Tur n-on Delay Time td(on) VCC = 300V, IC = 600A, – – 600 ns
Load Rise Time trVGE1 = VGE2 = 15V, – – 400 ns
Switch Tur n-off Delay Time td(off) RG = 3.1⍀,––900 ns
Times F all Time tfInductive Load – – 250 ns
Diode Reverse Recover y Time** trr Switching Operation – – 300 ns
Diode Reverse Recover y Charge** Qrr IE = 600A – 11.7 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)QPer IGBT, T c Reference – 0.088 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)DPer FWDi, Tc Reference – – 0.12 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT, – 0.04 °C/W
Tc Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per Module, Ther mal Grease Applied – 0.02 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
4
CM600HU-12F
Trench Gate Design Single IGBTMOD™
600 Amperes / 600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 1000
16
12
8
4
02000 3000 4000 5000
V
CC
= 300V
V
CC
= 200V
I
C
= 600A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
V
GE
= 0V
10
1
C
ies
C
oes
0 1.0 2.0 3.0 4.0
10
1
10
3
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
4
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
068 1210 181614 20
4
3
2
1
0
T
j
= 25°C
I
C
= 240A
I
C
= 1200A
I
C
= 600A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
0 200 400
2
1
01200800 1000600
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
01234
0
T
j
= 25
oC
200
400
600
1200
800
1000
V
GE
= 20V
15
109.5
9
8.5
7.5
8
11
C
res
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
t
f
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
10
3
10
2
10
1
I
rr
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
• (NORMALIZED VALUE)
Per Unit Base
R
th(j-c)
= 0.088°C/W (IGBT)
R
th(j-c)
= 0.12°C/W (FWDi)
Single Pulse
T
C
= 25°C
Tj = 25°C
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1 Ω
T
j
= 125°C
Inductive Load
EMITTER CURRENT, I
E
, (AMPERES)
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1 Ω
T
j
= 25°C
Inductive Load