VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex VP2106 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability Integral source-to-drain diode Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device VP2106 Package Option RDS(ON) ID(ON) (V) (max) () (min) (mA) -60 12 -500 BVDSS/BVDGS TO-92 VP2106N3-G -G indicates package is RoHS compliant (`Green') Pin Configuration DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature Soldering temperature* -55 C to +150 C O O 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * GATE TO-92 (N3) Product Marking S iV P 2106 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-92 (N3) Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VP2106 Thermal Characteristics ID ID Power Dissipation jc IDR ja IDRM Package (continuous) (mA) (pulsed) (mA) @TA = 25OC (W) ( C/W) ( C/W) (mA) (mA) TO-92 -250 -800 0.74 125 170 -250 -800 O O Notes: ID (continuous) is limited by max rated Tj . Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -1.0mA VGS(th) Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID= -1.0mA Change in VGS(th) with temperature - 5.8 6.5 Gate body leakage - -1.0 -100 nA VGS = 20V, VDS = 0V - - -10 A VGS = 0V, VDS = Max Rating - - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C -0.5 -1.0 - A VGS = -10V, VDS = -25V - 11 15 - 9.0 12 - 0.55 1.0 150 200 - VGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Conditions mV/ C VGS = VDS, ID= -1.0mA O %/OC VGS = -5.0V, ID = -100mA VGS = -10V, ID = -500mA VGS = -10V, ID = -500mA GFS Forward transductance CISS Input capacitance - 45 60 COSS Common source output capacitance - 22 30 CRSS Reverse transfer capacitance - 3.0 8.0 td(ON) Turn-on delay time - 4.0 5.0 Rise time - 5.0 8.0 Turn-off delay time - 5.0 9.0 Fall time - 4.0 8.0 Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -500mA Reverse recovery time - 400 - ns VGS = 0V, ISD = -500mA tr td(OFF) tf VSD trr mmho VDS = -25V, ID = -500mA pF ns VGS = 0V, VDS = -25V, f = 1.0MHz VDD = -25V, ID = -500mA, RGEN = 25 Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V PULSE GENERATOR 10% INPUT -10V td(ON) RGEN 90% t(OFF) t(ON) td(OFF) tr D.U.T. tF 0V OUTPUT VDD Output INPUT 90% 10% 90% RL 10% VDD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 VP2106 Typical Performance Curves Output Characteristics -2.0 Saturation Characteristics -1.0 VGS = -10V -1.6 -9V -0.8 -1.2 ID (amperes) ID (amperes) -8V VGS = -10V -9V -8V -0.8 -0.6 -7V -0.4 -6V -7V -6V -0.4 -5V -0.2 -5V -4V 0 0 -10 -20 -30 -40 VDS (volts) -0 0 -50 -10 TO-92 TA = 25C 150 TA = 125C 100 -8 -6 Power Dissipation vs. Ambient Temperature PD (watts) GFS (millisiemens) 200 -4 1.0 TA= -55C VDS = 25V -2 VDS (volts) Transconductance vs. Drain Current 250 -4V -3V 0.5 50 0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 25 50 ID (amperes) 75 100 125 150 TA (C) Thermal Response Characteristics Maximum Rated Safe Operating Area -1.0 1.0 Thermal Resistance (normalized) TO-92 (pulsed) ID (amperes) TO-92 (DC) -0.1 -0.01 TA = 25C -0.001 -0.1 -1.0 -10 VDS (volts) -100 0.8 0.6 0.4 TO-92 P D = 1.0W T A = 25C 0.2 0 0.001 0.01 0.1 1.0 tp (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 10 VP2106 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current -1.1 20 RDS(ON) (ohms) BVDSS (normalized) 16 -1.0 VGS = -5V 12 VGS = -10V 8 4 -0.9 0 -50 0 50 100 0 150 -0.2 -0.4 -0.6 -0.8 -1.0 ID (amperes) Tj (C) V(th) and RDS Variation with Temperature Transfer Characteristics 2.0 -1.0 ID (amperes) VGS(th) (normalized) TA = -55C -0.8 -0.6 25C -0.4 125C 1.6 RDS(ON) @ -10V, 0.5A 1.2 1.2 1.0 0.8 0.8 V(th)@ 1mA 0.4 -0.2 0.6 0 0 0 -2 -4 -6 -8 -50 -10 0 VGS (volts) 50 100 150 Tj (C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 100 f = 1MHz VGS (volts) 75 C (picofarads) VDS = -10V -8 50 CISS 25 VDS = -40V -6 101 pF -4 35 pF -2 COSS CRSS 0 0 0 -10 -20 -30 VDS (volts) -40 0 1.0 2.0 QG (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) VDS = -25V 1.4 VP2106 3-Lead TO-92 Package Outline (N3) D A 1 Seating Plane 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014 .014 .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022 .022 .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. (c)2009 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VP2106 A012409 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com